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    102N30P Search Results

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    Littelfuse Inc IXFN102N30P

    Discmsft N-Ch Hiperfet-Polasot-227B(Mini; |Littelfuse IXFN102N30P
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    Littelfuse Inc IXFR102N30P

    Discmosfetn-Ch Hiperfet-Polar Isoplus247; |Littelfuse IXFR102N30P
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    Littelfuse Inc IXFK102N30P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/; |Littelfuse IXFK102N30P
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    Littelfuse Inc IXTK102N30P

    Disc Mosfet N-Ch Std-Polar To-264/ Tube; |Littelfuse IXTK102N30P
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    IXYS Corporation IXTK102N30P

    MOSFETs 102 Amps 300V 0.033 Rds
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    TTI IXTK102N30P Tube 300
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    TME IXTK102N30P 1
    • 1 $17.86
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    102N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ISOPLUS247

    Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    102n30pisoplus247 PDF

    Contextual Info: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original
    102n30p405b2 PDF

    102N30P

    Abstract: 102N30 IXTK102N30P
    Contextual Info: PolarHTTM Power MOSFET IXTK 102N30P VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM


    Original
    102n30p102n30ixtk102n30p PDF

    Contextual Info: PolarHTTM Power MOSFET VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ IXTK 102N30P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM


    Original
    102n30po-264 PDF

    IXFN102N30P

    Contextual Info: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM


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    102n30pixfn102n30p PDF

    102N30P

    Abstract: IXTK102N30P
    Contextual Info: Advanced Technical Information PolarHTTM Power MOSFET IXTK 102N30P VDSS ID25 RDS on = 300 V = 102 A Ω = 33 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


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    102n30po-264ixtk102n30p PDF

    Contextual Info: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM


    Original
    102n30p PDF

    102N30P

    Contextual Info: Advanced Technical Information PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 102 A Ω 33 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    102n30p PDF

    123B16

    Abstract: 88 881 505 102N30P IXFN102N30P C8860
    Contextual Info: Preliminary Technical Information PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ


    Original
    102n30p405b2123b1688 881 505+2ixfn102n30pc8860 PDF

    NS224

    Contextual Info: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original
    102n30p405b2ns224 PDF

    ISOPLUS247

    Contextual Info: PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS on ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original
    102n30pisoplus247 PDF

    Contextual Info: PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS = 300 V ID25 = 60 A RDS on ≤ 36 m Ω ≤ 200 ns trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original
    102n30p PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


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    ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF