IXFT26N60 Search Results
IXFT26N60 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IXFT26N60 | IXYS | HiPerFET Power MOSFETs | Original | 71KB | 2 | ||
| IXFT26N60P | IXYS | N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated | Original | 248.13KB | 5 | ||
| IXFT26N60Q | IXYS | 600V HiPerFET power MOSFET Q-class | Original | 108.21KB | 2 |
IXFT26N60 Price and Stock
IXYS Corporation IXFT26N60PTransistor: N-MOSFET; unipolar; 600V; 26A; 460W; TO268 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXFT26N60P | 1 |
|
Get Quote | |||||||
|
IXFT26N60P |
|
Get Quote | ||||||||
|
IXFT26N60P | Tube | 300 |
|
Buy Now | ||||||
Littelfuse Inc IXFT26N60PDiscmosfetn-Ch Hiperfet-Polar To-268Aa/; |Littelfuse IXFT26N60P |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXFT26N60P | Bulk | 300 |
|
Buy Now | ||||||
|
IXFT26N60P | Bulk | 8 Weeks | 30 |
|
Get Quote | |||||
|
IXFT26N60P |
|
Buy Now | ||||||||
IXFT26N60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IXFH26N60P
Abstract: IXFV26N60P 26n60 26N60PS 26N60P IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60
|
Original |
ixfh26n60pixft26n60pixfv26n60pixfv26n60ps+6 | |
|
Contextual Info: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
Original |
ixfh26n60pixft26n60pixfv26n60pixfv26n60ps+4 | |
26n60
Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49
|
Original |
26n60/ixft26n6028n60o-247+4 | |
|
Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60 IXFT 26N60 ID25 RDS on 600 V 26 A 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ |
Original |
26n60o-268o-247728b1+2 | |
26N60
Abstract: 28n60
|
Original |
26n60/ixft26n6028n60o-247+1 | |
|
Contextual Info: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr D DS on ^D25 600 V 26 A 600 V 28 A trr < 250 ns 0.25 Q 0.25 Q Maximum Ratings IXFH/IXFT |
OCR Scan |
26n60/ixft26n6028n60o-247 | |
ne 22 mosfet
Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
|
OCR Scan |
isoplus220tmisoplus247tmvt0268t0264+16 |