T0264 Search Results

T0247

Abstract: 8N60M SW8600 Z357 L4080B l3540 L5545 L5050BN L3580 M/ve09 240
Contextual Info: Power Management Division Please note that our 4th Generation power MOSFETs are currently available in Europe only. T0264 Power Management Division PowerMOS IV plastic power M OSFETs S e m e la b ’s P ow erM O S I V 1M range offers VMOS switching speeds, very low on-resiscance,

T0247

Abstract: sml1001rAN SML1001RBN
Contextual Info: SEMELAB pie SELECTOR GUIDE VDSS RD SS on ID Pd T03 T0247 T0258 T03G100 T0247 T0247 T0258 D3PAK SOT227 MPack F-Pack T03 T0247 T0254 T03 T0220SM T0247 T0254 I T254 T0257(l) T03 T0247 T0254 T0257 T0220 T03 T0247 T0254 (I) T0254 T0257 T0257(l) T0220 SOT227 T0264

ITH60C06

Contextual Info: ITH60C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR Advance Inform ation DS5048-1.1 O ctober 1998 T h e IT H 6 0 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range

ITH60C06

Contextual Info: ITH60C06 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5048-1.2 December 1998 T h e IT H 6 0 C 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r

rf 157

Contextual Info: Package outlines Package outlines and dimensions Sm artpack packages 4,25 "*i ^ ^ 24 MWHH 44 10 10 -M H 24 44 XT TT 1 H6 . 57 10 -es- K lH -87- C2 . 0,8 tzs. 10 I 113. C3 1.75 rn — 28 — èO 90 LÈ5 i=; 5! n o n o n o . i . o .n.o.n LJ LJ LJ LJ LJ 10 l -

SP6-P

Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.

Diode D25 N10 R

Abstract: Diode D25 N10 P
Contextual Info: XYS HiPerFET Power MOSFETs IXFK100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK

TBD40

Abstract: ixfk73n30
Contextual Info: HiPerFET Power MOSFETs IXFK 73 N 30 IXFN 73 N 30 p V DSS ^D25 300 V 300 V 73 A 73 A DS on 45 mfl 45 mfl N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN v DSS Tj = 25°C to 150°C

CS5170

Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
Contextual Info: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .

ITS35C12

Abstract: ITS35C12T T0264
Contextual Info: ITS35C12 M ITEL Powerline N-Channel IGBTWith Ultrafast Diode SEMICONDUCTOR Advance Inform ation Supersedes Septem ber 1997 version, DS4754 - 2.1 The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

SML5040BN

Abstract: SML6015LVR sml40m70wvr sml5019hvr SML5020AVR T0267
Contextual Info: SEMELAB pic Type_No SML4025BN SML4025HN SML4030AN SML4030BN SML4030CN SML4030CNR SML4040AN SML4040BN SML4040CN SML4065AN SML4065BN SML4065CN SML4065GN SML4080AN SML4080BN SML4080CN SML4080GN SML40M35JVR SML40M35MVR SML40M42BFN SML40M70JVR SML40M70LVR SML40M70WVR

Contextual Info: A dvanced P o w er Te c h n o l o g y ' A P T 5 0 1 0 LVFR 500V POWER MOSV 47A 0.100Í2 FREDFET Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™

1500w audio amplifier circuit

Abstract: Schottky Diode 80V 6A 1500w PWM 220v C106MG marking code SS SOT23 tl494cn inverter datasheet smps 1500W MMSZ5231BT1G dc 220v motor speed control circuit with scr NCP1200P60G
Contextual Info: SGD501/D REV 19, October 9, 2004 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION − Please see General Information Section EFFECTIVE DATE: OCTOBER 9, 2004  General Information ON Semiconductor Standard Policies

Contextual Info: S i GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4754-2.1 ITS35C12 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS35C12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

SOT-227 lead frame

Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
Contextual Info: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic

LE79Q2281

Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security

si6045

Contextual Info: BHXYS Advanced Technical Information Hi PerFAST IGBT IXGK 120N60B IXGX 120N60B V CES ^C25 V CE sat Symbol Test Conditions Maximum Ratings T j = 25° C to 150° C T,J = 25° C to 150° C; FL. = 1 MQ üb 600 600 V V Continuous Transient +20 ±30 V V L.

sml6027hvr

Abstract: sml6030avr
Contextual Info: SEMELAB pie SELECTOR GUIDE Type_No Technology SML601R3CN SML601R3GN SML601R3KN SML601R6AN SML601R6BN SML601R6CN SML601R6GN SML601R6KN SML6025BVR SML6027HVR SML6030AVR SML6030BN SML6030BVR SML6033BN SML6035AVR SML6035BVR SML6035HVR SML6040AN SML6040BN SML6040BVR

Contextual Info: M ITEL ITZ35C12 Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5073 - 1.1 February 1999 The ITZ35C12 is a very robust non punch through nchannel, enhan cem ent m ode insulated gate bipolar transistor IGBT designed for low power dissipation in a

100N25

Contextual Info: □ IXYS Advanced Technical Information IXFX 100N25 IXFK 100N25 HiPerFET Power MOSFETs V DSS = 250 V* ID25 = 100 A DS on Single MOSFET Die Maximum Ratings PLUS 247™ (IXFX) TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 250 250

40N60

Abstract: 43N60 g 40n60
Contextual Info: HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single M O S FE T Die 43N60 40N60 43N60 40N60 v DSS ^D25 600V 600V 600V 600V 43A 40A 43A 40A D DS on 0.130 0.150 0.130 0.150 200ns 200ns 200ns 200ns TO-264 AA (IXFK) ?D Symbol Test Conditions Maximum Ratings IXFK

ANA 618

Abstract: voltage regulator ana 618 NZSMB15CAT3 GP 809 DIODE 1500w audio amplifier circuit SPEED CONTROL of DC MOTOR tda1085c CS5170 ANA 618* voltage regulator 12 VOLT 2 AMP smps diode 1n4007 MIC MAKE
Contextual Info: SGD501/D REV 13, April 12, 2003 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION - Please see General Information Section EFFECTIVE DATE: APRIL 12, 2003  General Information Elimination Of Ozone Depleting Chemicals . . . .

ITZ35C12

Contextual Info: ITZ35C12 M ITEL Powerline N-Channel IGBT With Ultrafast Diode SEMICONDUCTOR A dvance Inform ation DS5073 - 1.1 February 1999 The ITZ35C12 is a very robust non punch through nchannel, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a

2N6801-SM

Abstract: BFC49
Contextual Info: SEMELAB pic Type_No 2N6800SM 2N6801 2N6801-SM 2N6801LCC4 2N6802 2N6802SM 2N6845 2N6847 2N6849 2N6849L 2N6851 2N7000 2N7218 2N7219 2N7221 2N72220 2N7224 2N7225 2N7227 2N7227 2N7228 2N7228 2N7236 2N7237 BC264 BFC10 BFC11 BFC12 BFC13 BFC14 BFC15 BFC16 BFC17 BFC18