100N25 Search Results

100N25

Abstract: ID104
Contextual Info: HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A Ω = 27 mΩ trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM

100N25P

Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 100N25P VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N25 VDSS ID25 = 250 V = 100 A = 27 mW Single MOSFET Die RDS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr trr £ 250 ns Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

100N25

Contextual Info: Advanced Technical Information IXFX 100N25 IXFK 100N25 HiPerFETTM Power MOSFETs VDSS ID25 RDS on Single MOSFET Die trr £ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient

100N25P

Abstract: 100N25 IXTK100N25P 50A8
Contextual Info: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ

Contextual Info: Advanced Technical Information IXTQ 100N25P IXTK 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

100N25P

Contextual Info: IXTK 100N25P IXTQ 100N25P IXTT 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ

100N25

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N25 RDS on Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25

IXFN100N25

Contextual Info: □ IXYS Advanced Technical Information IXFN 100N25 HiPerFET Power MOSFETs V,DSS 250 ^D25 100 A 27 mQ R,DS on Single MOSFET Die A N -C h a n n e l E n h a n c e m e n t M o d e { I*-] A v a la n c h e R a te d , H ig h d v /d t, L o w t rr V trr < 250 ns

Contextual Info: IXTQ 100N25P PolarHTTM Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ For Plasma Display Applications Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V VGS VGSM Continuous Transient ±20 ±30

100N25

Contextual Info: □ IXYS Advanced Technical Information IXFX 100N25 IXFK 100N25 HiPerFET Power MOSFETs V DSS = 250 V* ID25 = 100 A DS on Single MOSFET Die Maximum Ratings PLUS 247™ (IXFX) TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 250 250

100N25P

Contextual Info: IXFH 100N25P PolarHTTM HiPerFET Power MOSFET VDSS = 250 V ID25 = 100 A Ω RDS on = 27 mΩ ≤ 200 ns trr For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 250 250 V V

98840

Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 100N25 VDSS ID25 = 250 V = 87 A Ω = 27 mΩ RDS on (Electrically Isolated Backside) trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 100N25 RDS on Single MOSFET Die Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 250 250 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25

98840

Contextual Info: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 100N25 trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

100N25

Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 100N25P VDSS = 250 V ID25 = 100 A Ω RDS on ≤ 27 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

100N25

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFX 100N25 IXFK 100N25 VDSS ID25 RDS on Single MOSFET Die = 250 V = 100 A = 27 mW trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW

Bosch ecu connectors

Abstract: bosch PA66 gf bosch PA66 GF 15 Bosch ecu connector Bosch 80 pin ecu connectors ecu connectors bosch connector bosch bosch ecu ecu bosch bosch ecu datasheet
Contextual Info: Product Specification 108-61015 Rev. A ECU 88P CONNECTOR – BOSCH TYPE 1. Scope: 1.1 Contents; This specification covers the requirements for product performance, test methods and quality assurance provisions of ECU 88P connector BOSCH type 1.2 Applicable document;

IXTD08N100P-1A

Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types

transistor 12n60c

Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Contextual Info: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design

12N60c equivalent

Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q
Contextual Info: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t

flyback transformer eldor

Abstract: furukawa TEX-E TRANSISTORS BJT bc548 samwha capacitor part numbers AN1523 E20/10/6 transformer 4 pin size B82731-R2501-A30 PCB- 94v-0 samwha date code optocoupler MTBF calculation
Contextual Info: AN1523 APPLICATION NOTE 11W FLYBACK CONVERTER FOR AUXILIARY POWER SUPPLY APPLICATION USING THE L6590 by Claudio Spini This document describes an 11W Switch Mode Power Supply reference design, dedicated to Consumer Applications, e.g. TV chassis auxiliary power supply, low cost Set-top box or digital equipment. The

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

AN1523

Abstract: flyback transformer eldor E17385 furukawa TEX-E optocoupler MTBF calculation Nexans samwha date code Loctite 480 TRANSISTORS BJT bc548 optocoupler IC PC817 pin details
Contextual Info: AN1523 APPLICATION NOTE 11W FLYBACK CONVERTER FOR AUXILIARY POWER SUPPLY APPLICATION USING THE L6590 by Claudio Spini This document describes an 11W Switch Mode Power Supply reference design, dedicated to Consumer Applications, e.g. TV chassis auxiliary power supply, low cost Set-top box or digital equipment. The