IXFR32N50 Search Results

IXFR32N50 Datasheets (2)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFR32N50Q		IXYS	500V HiPerFET power MOSFET	Original	PDF	93.39KB	4
IXFR32N50Q		IXYS	HiPerFET Power MOSFETs ISOPLUS247	Scan	PDF	230.53KB	4

IXFR32N50 Price and Stock

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IXYS Corporation


IXYS Corporation IXFR32N50Q 30A, 500V, 0.16OHM, N-CHANNEL, SI, POWER, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IXFR32N50Q		14			1 $14.50 10 $10.88 100 $10.88 1000 $10.88 10000 $10.88	Buy Now

IXFR32N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFR32N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	isoplus247tm 30n50q 32n50q 30n50 +332n50 247tm ixfr32n50	PDF
IXFR32N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	isoplus247tm 30n50q 32n50q 30n50 +332n50 125oc ixfr32n50	PDF
30N50 Abstract: IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions	Original	isoplus247tm 32n50 30n50 ixfr32n50	PDF
30N50 Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions	Original	isoplus247tm 30n50q 32n50q 247tm +5125oc 30n50 32n50 ixfr30n50 ixfr32n50	PDF
IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions	Original	isoplus247tm 30n50q 32n50q 30n50 +232n50 ixfr32n50	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	isoplus220tm isoplus247tmv t0268 t0264 +16ot227b o-263 o-220 247tm o-247 o-204 ne 22 mosfet ixfh26n60q ixft12n100q ixfr100n25 ixfn26n90 fn230 ixfn36n60 n50p ixfn44n50u2 ixfn80n50	PDF
30N50 Abstract: 32N50 32N50Q ISOPLUS247 IXFR30N50 lt 715 IXFR32N50 Contextual Info: □ IXYS Advanced Technical Information Vv DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface p ^D25 29 A 500 V 30 A 500 V t rr £ 250 ns DS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low t , HDMOS™ Family	OCR Scan	isoplus247 30n50q 32n50q 30n50 +432n50 ixfr30n50 lt 715 ixfr32n50	PDF
30N50 Abstract: IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions	Original	isoplus247tm 32n50 30n50 ixfr32n50	PDF