IXFR30N50 Search Results

IXFR30N50 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFR30N50		IXYS		Original	PDF	93.4KB	4
IXFR30N50Q		IXYS	500V HiPerFET power MOSFET	Original	PDF	93.39KB	4
IXFR30N50Q		IXYS	HiPerFET Power MOSFETs ISOPLUS247	Scan	PDF	230.53KB	4

IXFR30N50 Price and Stock

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IXYS Corporation


IXYS Corporation IXFR30N50Q MOSFET N-CH 500V 30A ISOPLUS247
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IXFR30N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXFR32N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 247TM IXFR32N50	PDF
IXFR32N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 32N50 125OC IXFR32N50	PDF
30N50 Abstract: IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 32N50 30N50 30N50 IXFR32N50	PDF
30N50 Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 30N50Q 32N50Q 247TM 125OC 30N50 32N50 32N50Q IXFR30N50 IXFR32N50	PDF
IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 30N50Q 32N50Q 30N50 32N50 IXFR32N50	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Contextual Info: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF
30N50 Abstract: 32N50 32N50Q ISOPLUS247 IXFR30N50 lt 715 IXFR32N50 Contextual Info: □ IXYS Advanced Technical Information Vv DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface p ^D25 29 A 500 V 30 A 500 V t rr £ 250 ns DS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low t , HDMOS™ Family	OCR Scan	ISOPLUS247â 30N50Q 32N50Q 30N50 32N50 32N50 ISOPLUS247 IXFR30N50 lt 715 IXFR32N50	PDF
30N50 Abstract: IXFR32N50 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions	Original	ISOPLUS247TM 32N50 30N50 30N50 IXFR32N50	PDF