TC528126 Search Results

TC528126BJ-10

Contextual Info: TC528126BJ-10 1/3 IL00 * C-MOS 1M (131,072 X 8)-BIT MULTI PORT DYNAMIC RAM -TOP VIEW25 SC SIO1 IN 1 I/O 2 GND 40 24 39 SIO8 23 I/O 22 SIO2 SIO3 I/O I/O 3 38 SIO7 4 I/O 19 37 SIO6 I/O 18 17 SIO4 I/O 5 36 SIO5 DT/OE IN 6 35 SE W1/IO1 I/O 7 34 W8/IO8

TMS48C121-80

Abstract: AJ10 M5M482128 tc528128
Contextual Info: 1M 1 2 8 K X 8 m -7 ) ^ • h^ Ï ' J TC528126AP/AJ-10.-12 % TC528128AP/AJ-10,-12 / — ¿i - TMS48C121-80,-10,-12 T.I «- _ - - 126KW X 8 /256W X 8 5 V±10% X h « * X X X X X (SANUf >'<{, 7 7 r í 7') 110, 100/150, 140(max, - 100, 80, 70/120, 95, 85(max»

tc528126

Abstract: TC528126B
Contextual Info: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The

Contextual Info: T O S H IB A INTEGRATED CIRCUIT D IG IT A L IN T E G R A T E D T C 5 2 3 1 2 5 A ? / A J - 10 T O S H IB A TECHNICAL DATA S IL IC O N GATc C S C JIT , T C 5 2 8 1 2 S A ? / A J - 12 CM O S P R E L IM IN A R Y 131 , Q72 W O R D S x SB II S M U L T iP O R T D R A M

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

TC524258BJ

Abstract: TC528128BJ-80 TC524258B TC524300SF TC524256BFT-80 TC524300 TC528257 tc528128 tc524258 TC524256
Contextual Info: Video Memory Capacity Type No. X6 RAM Pot Access Time Organizaron tRAC S A M Port Access Time ns tCAC Cycle Time Access Time CvdeTime Max. Power Dissipation (mW) Active Stand-by 80 25 150 25 30 687.5 55 TC524256BJ/BZ-10 100 25 180 25 30 605 55 TC524258BJ/BZ-80

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

TC528126BZ

Abstract: TC528126 TC528126B
Contextual Info: 131, 0 7 2 W O R D S x íiB IT S M U L T IP O R T PRELIMINARY DRAM D E S C R IP T IO N The TC528120BJ/BZ is a CMOS m ultiport m em ory equipped w ith a 131,072-words by 8-bits dynam ic random a c c e s s m em ory RAM p ort and a 256-w ords by 8-bits static serial a c c e s s m em ory (SAM) port. The

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258