P023C Search Results

diode lt 0236

Contextual Info: f Z 7 ^ 7# S G S -T H O M S O N vndosb DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE V dss RDS on ln(*) V cc VND05B 40 V 0.2 Q 1.6 A 26 V . OUTPUT CURRENT (CONTINUOUS): 9 A @ Tc=85°C PER CHANNEL . 5V LOGIC LEVEL COMPATIBLE INPUT

uPD23C128E

Abstract: P023C M-PD27128 23C128E
Contextual Info: SEC jiPD23C128E 16,384 x 8-BIT MASK-PROGRAMMABLE CMOS ROM NEC Electronics Inc. Revision 1 Pin C onfiguration D escriptio n The |j.PD23C128E is a 131,072-bit Read-only Memory utilizing C M O S silicon gate technology. The device is static in operation, organized as 16,384 words by 8 bits,

VND05B

Abstract: P023C a26V p023b
Contextual Info: VND05B DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE V DSS R DS on I n (*) VC C VND05B 40 V 0.2 Ω 1.6 A 26 V • ■ ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 9 A @ Tc=85 oC PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUT

Contextual Info: r z 7 ^ 7# S C S -T H O M S O N raDraOHLIOTTI^Mnei V N D 1 OB DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE V dss RDS on In(*) Vcc VND10B 40 V o.i a 3.4 A 26 V . OUTPUT CURRENT (CONTINUOUS): 14 A @ Tc=85°C PER CHANNEL . 5V LOGIC LEVEL COMPATIBLE INPUT

VND10B

Abstract: CMA2000
Contextual Info: VND10B DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE VDSS R DS on I n (*) VCC VND10B 40 V 0.1 Ω 3.4 A 26 V • ■ ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 14 A @ Tc=85oC PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUT

upD23C1001

Contextual Info: ¿/P D 23C 1001E 1 31 ,0 72 x 8 -B IT M A S K -P R O G R A M M A B LE c m o s ro m N E C Electronics Inc. Description Pin Configuration The /uPD23C1001E is a 131,072-word by 8-bit static ROM fabricated with CMOS silicon-gate technology. Designed to operate from a single -l-5-volt power

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

VND10B

Contextual Info: VND10B DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA TYPE V DSS R DS on I n (*) VC C VND10B 40 V 0.1 Ω 3.4 A 26 V • ■ ■ ■ ■ ■ ■ OUTPUT CURRENT (CONTINUOUS): 14 A @ Tc=85oC PER CHANNEL 5V LOGIC LEVEL COMPATIBLE INPUT