LH53 Search Results

lhmn5

Abstract: 2600T LH5332600T LH53 DA-14-L
Contextual Info: I LH53 3 2 6 00 T C O N T E N T 1 S 1 J. General Description P. 2 2. Features P. 2 3. Block Diagram P. 3 4. Pin Connections P. 4 5. Pin Description P. 4 6. Absolute Maximum Ratings P. 5 n t. Operating Ranges P. 5 8. D.C. Electrical Characteristics P. 5 9. A. C. Electrical Characteristics

A14C

Abstract: LH53259 sharp mask rom
Contextual Info: LH53259 CMOS 256K 32K x 8 M ask-Program m able ROM FEATURES PIN CONNECTIONS • 32,768 words x 8 bit organization • Access time: 150 ns (MAX.) 28-PIN DIP 28-PIN SOP TOP VIEW • Low-power consumption: Operating: 137.5 mW (MAX.) Standby: 550 n-W (MAX.)

48-PIN

Abstract: A12C A15C LH532000B-1
Contextual Info: LH532000B-1 FEATURES CMOS 2M 256K x 8/128K x 16 M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VIEW f . 1• 2 a 7[= O E i/Ô Ë ^D C C

A1SH

Abstract: 32DIP 32-PIN LH532100B-1 A14C
Contextual Info: LH532100B-1 FEATURES CMOS 2M 256K x 8 Mask-Programmable ROM PIN CONNECTIONS • 262,144 words x 8 bit organization • Access time: 120 ns (MAX.) 32-PIN DIP 32-PIN SOP TOP VIEW f \ O E ^ O E i/D C C • Static operation • TTL compatible I/O • Three-state outputs

48-PIN

Abstract: A10C A12C A15C LH532000B
Contextual Info: LH532000B FEATURES CMOS 2M 256K x 8/128K x 16 M ask-Program m able ROM PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 40-PIN DIP 40-PIN SOP TOP VI EW f 1• \ 40 ZI Ag a 7C 2 39 U Ag AgiZ

LHMN5

Abstract: 48TSOP LH5332600 LH5332600N LH5332600T LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV
Contextual Info: NBA/ INFORMATION LH5332600 • High-speed 32M-bit Mask-Programmable ROM Pin Connections Description The LH5332600N/T User's No. : LHMN56XX/LHMN5FXX is a CM OS 32M-bit mask-programmable ROM organized as 4 194 304X8 bits (Byte mode) or 2 097 152X 16 bits (Word

44-PIN

Abstract: LH532048 QFJ044-P-0650
Contextual Info: LH532048 • Access time: 100 ns MAX. 40-PIN DIP 40-PIN SOP TOP VIEW • Static operation NC 1 40 VCC CE 2 39 NC • TTL compatible I/O D15 3 38 A16 4 • Three-state outputs D14 37 A15 D13 5 36 A14 • Single +5 V power supply D12 6 35 A13 D11 7 34 A12

LH53B16R00

Contextual Info: LH53B16R00 CMOS 16M 1M x 16/512K × 32 MROM FEATURES PIN CONNECTIONS • 1,048,576 × 16 bit organization (Word mode: W = VIL) 524,288 × 32 bit organization (Double Word mode: W = VIH) • Access time: 120 ns (MAX.) Access time in page mode: 50 ns (MAX.)

lh5s4

Abstract: lh5348 LH5s lh5s47xx 48-TSOP LH53H4100D LH53H4100N lh534y00d 48TSOP sharp mask rom
Contextual Info: NEW PRODUCT INFORMATION SHARP LH53 H4100 • Description High-speed 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.

Contextual Info: LH53V8000 FEATURES C M O S 8 M 1 M x 8 / 5 1 2 K x 16 3 V - D r iv e M a s k - P r o g r a m m a b le R O M PIN CONNECTIONS • 1,048,576 words x 8 bit organization (Byte mode) 42-PIN DIP TOP VIEW r A-ie C 1« Ai? C 2 524,288 words x 16 bit organization

40-pin EPROM pinout

Abstract: 44-PIN LH531024 QFJ044-P-S650 C1161
Contextual Info: LH531024 FEATURES • 65,536 words x 16 bit organization CMOS 1M 64K × 16 MROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW • Access time: 100 ns (MAX.) • Power consumption: Operating: 412.5 mW (MAX.) Standby: 550 µW (MAX.) VCC NC 1 40 CE 2 39 NC

44-PIN

Abstract: LH5324500 LH5324500N
Contextual Info: LH5324500 FEATURES • 3,145,728 words x 8 bit organization Byte mode 1,572,864 words × 16 bit organization (Word mode) • Access time: 150 ns (MAX.) • Power consumption: Operating: 357.5 mW (MAX.) Standby: 550 µW (MAX.) • Static operation • TTL compatible I/O

mrom

Abstract: 32-PIN 32TSOP LH534A00 LH534A00T TSOP032-P-0820 IA111
Contextual Info: LH534A00 FEATURES CMOS 4M 512K x 8 MROM PIN CONNECTIONS • 524,288 words × 8 bit organization • Access time: 120 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Power consumption: Operating: 357.5 mW (MAX.)

44-PIN

Abstract: 48-PIN LH5332600
Contextual Info: LH5332600 FEATURES • 4,194,304 x 8 bit organization Byte mode: BYTE = VIL 2,097,152 × 16 bit organization (Word mode: BYTE = VIH) • Access time: 100 ns (MAX.) CMOS 32M (4M × 8/2M × 16) MROM PIN CONNECTIONS 44-PIN SOP TOP VIEW NC 1 44 A20 A18 2 43

Contextual Info: LH5364000 FEATURES • 8,388,608 words Byte mode 4,194,304 words (Word mode) CMOS 64M (8M x 8/4M x 16) Mask-Programmable ROM PIN CONNECTIONS x 8 bit organization 44-PIN SOP x 16 bit organization • Access time: 150 ns (MAX.) • Power consumption: Operating: 385 mW (MAX.)

MB8316200

Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Contextual Info: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S

DELL power supply diagram

Contextual Info: LH53515 CMOS 512K 64K x 8 M ask-P rogram m able ROM FEATURES DESCRIPTION • 65,536 x 8 bit organization • Access time: 150 ns (MAX.) The LH53515 is a mask-programmable ROM organ­ ized as 65,536 x 8 bits. It is fabricated using silicon-gate CMOS process technology.

LH534K00D-15

Contextual Info: CM OS 4M 512K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 524,288 x 8 bit organization The LH534K00 is a 4M-bit mask-programmable ROM organized as 524,288 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)

dl321

Contextual Info: LH534600 FEATURES • CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM DESCRIPTION 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Low-power consumption:

sharp mask rom 44-pin

Contextual Info: LH532000B FEATURES • Selectable memory organization: 262,144 x 8 bit byte mode 131,072 x 16 bit (word mode) • BYTE input pin selects bit configuration • Access time: 120/150 ns (MAX.) • CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM DESCRIPTION

d1545

Contextual Info: PRELIMINARY LH538600 FEATURES • 1,048,576 x 8 bit organization Byte mode 524 ,2 8 8 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (M AX.) • Power consumption: Operating: 3 8 5 mW (M AX.) Standby: 55 0 jiW (M AX.)

LH53

Abstract: LH538100
Contextual Info: CMOS 8M 1M x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 1 ,048,576 x 8 bit organization The LH538100 is a mask-programmable ROM organized as 1,048,576 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 200 ns (MAX.)

536G

Abstract: LH534600
Contextual Info: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)

A-1435

Contextual Info: LH532048 C M O S 2M 128K x 16 M ask-P ro g ram m ab le ROM FEATURES • 131,072 words x 16 bit organization • Access time: 100 ns (MAX.) PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW / • Static operation • TTL compatible I/O • Three-state outputs