TC538200 Search Results

Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC538200AP/AF-8 M BIT 512K W O R D X 16 B IT / 1 M W ORD X 8 B IT C M O S M A S K R O M D E S C R IP T IO N T h e T C 5 3 8 2 0 0 A P /A F is a 8 ,3 8 8 ,6 0 8 b its re a d on ly m em ory o rg an ize d a s 5 2 4 ,2 8 8 w ords b y 16 b its

Contextual Info: INTEGRATED T O SH IB A CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC538200AP/AF SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits

A10AL

Abstract: TC538200AFT
Contextual Info: TO SH IB A TC538200AP/AF/AFT TOSHIBA MOS INTEGRATED CIRCUIT SILICON GATE CMOS 8 MBIT 512 K WORD BY 16 BITS/1 M WORD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits when BYTE is logical high, and as 1,048,576 words by 8 bits when BYTE is logical low.

TC538200AP

Abstract: TC538200AF TC538200 TC538200A
Contextual Info: TOSHIBA TC538200AP/AF SILICON STACKED GATE CMOS 524,288 WORD x 16 BIT/1,048,576 WORD x 8 BIT CMOS MASK ROM D escription The TC538200AP/AF or as 1,048,576 w ords by The TC538200AP/AF The TC538200AP/AF is a 8,388,608 bit read only m em ory organized as 524,288 w ords by 16 bits when BYTE is logical high,

TC538200P

Contextual Info: 8M BIT 512K WORD X 16 BIT/1M WORD x 8BIT CMOS MASK ROM PRELIMINARY DESCRIPTION The TC538200P/F is a 8,388,608 bits read only memory organized as 524,288 words by 16 bits when BYTE is logical high, and is organized as 1,048,576 words by 8 bits when UYTJS is logical low.

TC538200AP

Contextual Info: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS INTEGRATED CIRCUIT TC538200AP/AF SILICON GATE CMOS 8 MBIT 512 K W O RD BY 16 BITS/1 M W O RD BY 8 BITS CMOS MASK ROM DESCRIPTION The TC538200AP/AF is a 8,388,608-bit Read Only Memory organized as 524,288 words by 16 bits

Contextual Info: 8M BIT 512K W O RD x 16 BIT /1M W O RD x 8BIT CMOS M ASK ROM DESCRIPTION The BYTE The The The TC538200P/F is a 8,388,608 bits read only memory organized as 524,288 words by 16 bits when is logical high, and is organized as 1,048,576 words by 8 bits when BYTE is logical low.

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

TMPR3903AF

Abstract: TC5118165 TOSHIBA Thyristor QFP208-P-2828-0 P10GD toshiba lcd nmp tvs 5v sy 6551 MIPS R3000A
Contextual Info: Preface Thank you for your new or continued patronage of Toshiba semiconductor products. This is the 1998 edition of the databook for the TMPR3903AF 32-bit TX System RISC microcontroller. This databook is written so as to be accessible to engineers who may be designing a Toshiba

MB834000

Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
Contextual Info: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010

TC538200P

Abstract: TC538200 e439 E-1330 A18E TC538200F E2023
Contextual Info: 8M BIT 512K W O R D x 16 B IT /1 M W O R D x 8BIT CM OS M ASK ROM DESCRIPTION The T C 538200P /F is a 8,388,608 bits read only memory organized as 524,288 words by 16 bits when BYTE is logical high, and is organized as 1,048,576 words by 8 bits when BYTE is logical low.

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

TC578200D

Abstract: TC578200D-150 TC538200P
Contextual Info: TOSHIBA TC578200D-150, -200 SILICON STACKED GATE CMOS 524,288 WORD x 16 BIT/1,048,576 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC 578200D is a 8,388,608 bit CM OS ultraviolet light erasable and electrically program m able read only memory. It is

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

TC578200

Abstract: TC538200 TC578200D TC578200D-150
Contextual Info: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC578200D-150,-200 8 M E G A BIT 524,288 W O R D x 16BIT / 1,048,576 W O R D x 8BIT C M O S U.V, ERA SA B LE A N D ELECTRICALLY P R O G R A M M A B L E REA D O N LY M E M O R Y D ESCRIPTIO N The TC 578200D is a

GI9332

Abstract: mb831000 MB834000 23C2001 23C1001 23c1000 UPD23C1001 23c4001 HN62304 mb832000
Contextual Info: PROM/ROM index and cross reference 1.9 Jan 16, 2000 -Fujitsu 256K 32k x 8 MB83256 28 pin 512k 64k x 8 MB83512 (28 pin) 1M 128k x 8 MB831000 (32 pin) 2M 256k x 8 MB832000 (32 pin) 4M 256k x 16 / 512k x 8

TC5816FT

Abstract: TC5332410F TC5316200CP TC531621 TC5310
Contextual Info: CMOS Flash E2PROM Capacity 1MBit flash X6 Max. Power Dissipation mW Power Supply Max. Accès» Organization Time(ns) V p p (V) Voc(V) Typ» No. Wiita/Erase Standby Read Operating Write/Erase Temperature Method 600mil DIP •TC58F010F-10, 12 525mil SOP •TC58F010FT10, 12

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258