TC5117800 Search Results

TC5117800bnt-60

Abstract: TC5117800B
Contextual Info: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Contextual Info: TOSHIBA ' m ^0^7240 0020 34 1 R7b • TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM DRAM Description Features Key Parameters 2,097,152 word by 8 bit organization Fast access time and cycle time Single power supply of 5V±10% with a built-in VBB generator

schottky CST

Abstract: h28p CST50 tc5117800cft
Contextual Info: TOSHIBA TC5117800CJ/CFT/CST-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORD BY 8-BIT FAST PAGE DYNAMIC RAM DESCRIPTION The TC5117800CJ/CFT/CST is a fast page dynamic RAM organized as 2,097,152 words by 8 bits. The

TC5118160

Abstract: c51v tc5118180
Contextual Info: X6 Capacity Type No. Max. Access Time ns Min. Cyde Power Organization Time(ns) Supply (V) Max. Powat Dis»ip»tk>n(rciW) Active *T C 5 1 16800ANJ/ANT-60 60 15 30 110 523 *T C 5 1 16800ANJ/ANT-70 70 20 35 130 440 *TC5117800ANJ/ANT-60 60 15 30 110 743 2097152

A249

Contextual Info: TOSHIBA TC511780QANJ/ANT-60/70/80 2,097,152 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC5117800A series is the new generation dynamic RAM organized 2,097,152 word by 8 bit. The TC5117800A series utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit

Contextual Info: r O S H IB A TC5117800ANJ/ANT-60/70/80 2,097,152 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC5117800A series is the new generation dynamic RAM organized 2,097,152 w ord by 8 bit. The TC5117800A series utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

TA8172AF

Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
Contextual Info: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16

M5M23160

Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Contextual Info: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

TC5118160

Abstract: tc514170 ti67 TC514273 QFP100-P-2222-0 95c061b P54C tc5117800 P2222 TMP95C061B
Contextual Info: TOSHIBA TMP95C061B CMOS 16-bit MICROCONTROLLER TMP95C061BF 1. OUTLINE AND DEVICE CHARACTERISTICS TM P95C061BF is high-speed advanced 16-bit m icrocontroller developed for controlling medium to large-scale equipment. TMP95C061BF is housed in an 100-pin mini flat package QFP100-P-1414-0.50 . TMP95C061BEF is housed in QFP100-P2222-0.80A package.

tc5118160

Abstract: TC514273
Contextual Info: TOSHIBA TOSHIBA Original CMOS 16-Bit Microcontroller TLCS-900/H Series TMP95C061B TOSHIBA CORPORATION Preface Thank you very much for making use of Toshiba microcomputer LSIs. Before use this LSI, refer the section," Points of Note and Restrictions". Especially, take care below cautions.

tc5117805

Contextual Info: TO SH IBA TC51 17805CJS/CFTS/CSJS/CSTS-60 TENTATIVE TOSHIBA 8IPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-W ORD BY 8-BIT EDO HYPER PAGE DYN AM IC RAM DESCRIPTION The TC5117805CJS/CFTS/CSJS/CSTS is an EDO (hyper pa :e) dynamic RAM organized as 2,097,152 words