KM41C16000 Search Results

41C16000

Contextual Info: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: KM41C16000A/AL/ALL/ASL CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 1 C 1 6 00 0 A /A L 7 A L L7 A S L is a high • Performance range: tRAC tCA C KM41C16000A/AL/ALL'ASL-5 50ns 13ns 90ns

Contextual Info: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time(-5,

Contextual Info: PRELIMINARY KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,77 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

K/KM41C16000B

Contextual Info: KM41C16000B, KM41V16000B CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: CMOS DRAM KM41C16000 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 1 6 0 0 0 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random A ccess M em ory. Its design is optim ized tor high perform ance applications

KM41C16000A

Contextual Info: KM41C16000A/AL/ALL/ASL CMOS DRAM 16M x 1 Bit C M O S Dynamic R A M with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: tRA C tC A C tnc KM41C16000A/AL/ALL/ASL-5 50ns 13ns 90ns KM41C16000A/AL/ALI7ASL-6 60ns 15ns 110ns KM41C16000A/AL/ALL/ASL-7

Contextual Info: KMM5816000/T DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The S am sung KMM5816000/T is a 16M bit x 8 D ynam ic RAM high d e nsity m em ory m odule. The S am sung KMM5816000/T con sist o f eight KM41C16000H' DRAMs in 24-pin SOJ/TSOP II package m o unte d on a 30-pin

TAA 691

Contextual Info: KM41C16000C, KM41V16000C CMOS DRAM 16M x1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5 or -6), power consumption(Normal or Low power) and

Contextual Info: KM41C16000L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM41C16000L-6 • • • • • • • • • • Í rac tcAc I rc 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8 80ns

Contextual Info: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 16,777,216 x 1 bit Fast Page M ode CM O S DRAMs. Fast Page M ode o ffe rs high speed random a cce ss of m em ory cells w ithin the sam e row. Pow er supply voltage + 5.0V o r +3.3V , access tim e(-5,

KM41C16000L-8

Contextual Info: CMOS DRAM KM41C16000L 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • • • • -I rac tcAc ÍRC KM41C16000L-6 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8

Contextual Info: KM41C16000L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • • • I rc tRAC tcAC KM41C16000L-6 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8 80ns 20ns

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

31A11

Abstract: KM41C16000A A91E
Contextual Info: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 16,777,216 x 1 bit Fast Page M ode C M O S DRA M s. Fast Page M ode o ffe rs high speed random acce ss o f m em ory celis within th e sam e row. Pow er supply voltage + 5.0V o r +3.3V , access tim e(-5,

KM41C16000

Abstract: TAA 691
Contextual Info: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM 41C 16000-6 • • • • • • • • • • tR A C tC A C tR C 60n6 15ns 1 10ns KM 41C 16000-7 70ns 20ns 130ns KM 41C 160 0 0-8

KMM5916000

Contextual Info: KMM5916000/T DRAM MODULES 16 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5916000/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung KMM5916000/T consist of nine KM41C16000rr DRAMs

Contextual Info: b?E J> • SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 Dülfc.023 T32 « S U C K KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Perform ance range: KM 41C 16000-6 • • • • • • • • • • tRAC

Contextual Info: SAMSUNG ELECTRONICS INC b7E T> 7^11+2 0 0 1 b 0 3 cï 3 T T « S N Ö K CMOS DRAM KM41C16000L 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16000L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­

A302V

Abstract: KM41C16000B K/KM41C16000B
Contextual Info: KM41C16000B, KM41V16000B CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

41C16000

Abstract: 41C16000-6 AEE16 KM41C16000-6
Contextual Info: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

dram simm memory module samsung 30-pin 16M

Abstract: 16M 30-pin SIMM
Contextual Info: KMM5816100/T DRAM MODULES 1 6 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816100/T is a 16M bit x 8 Dynamic RAM high density memory module. The Samsung KMM5816100/T consist of eight KM41C16000J/T DRAMs

cbf 495

Abstract: 13T3A
Contextual Info: KM41C16000C, KM41V16Q00C CMOS DRAM 16Mx1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time {-5 or -6), power consumption(Normal or Low power) and

Contextual Info: KM41C16000C, KM41V16000C CMOS DRAM 16M x1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5 or -6), power consumption(Normal or Low power) and