424100 Search Results

SIMM 30-pin

Contextual Info: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is a fast-page 4,194,304-word by 8-bit 30-Pin Leaded SIMM dynam ic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir­

nec 424100

Abstract: 424100 nec v70 LA80 pd424100
Contextual Info: N E C Electronics Inc. 424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit Dynamic CMOS RAM Description Features .Erf W The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.

nec 424100

Contextual Info: M ié W W NEC Electronics Inc. 424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit Dynamic CM O S RAM Description Features The devices listed below are fast-page dynamic RAMs organized as 4,194,304 words by 1 bit and designed to operate from a single power supply.

Contextual Info: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module IH M li W NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is afast-p age 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single + 5-vo lt power supply. Advanced CMOS circuitry, includ­

30-pin simm memory dynamic

Contextual Info: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is afast-page 4,194,304-word by 8-bit dynamic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir­

nec 424100

Abstract: PD424100-70L
Contextual Info: NEC MOS INTEGRATED CIRCUIT 424100, 424100-L 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE Description The /424100, 424100-L are 4 194 304 words by 1 bit dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

adret

Abstract: 42S41 424100 CSR BLE m07b
Contextual Info: £ Q E L E C T R O N I C S I N C b l E D • b 4 B V S 2 S 0 0 3 3 S 7 b DSG H N E C E NEC Electronics Inc. /424100, 424100A/L, 42S4100A/L 4,194,304 X 1-Bit D yn am ic C M O S R A M Description Features T \ l Md W T he devices listed below are fast-page dynam ic RAMs

nec 424256

Abstract: nec 424100 511000 424256 424256 nec KM41C1000 NEC 421000 m5m44c256 S4C1024 514256
Contextual Info: SIEM EN S Cross reference Memory Components 1 Mx1 256 K SIE M E N S HYB 511000 HYB 514256 HYB 514100 TO SHIBA TC 511000 TC 514256 TC 514100 HITACHI HM 511000 HM 514256 HM 514100 NEC jiP D 421000 XPD 424256 (XPD 424100 M ITSUBISHI M5M4C1000 M5M44C256 M5M514000

nec 424100

Abstract: upd424100 424100 424100-L upd424100-80 upd424100-80l 408L4
Contextual Info: NEC MOS INTEGRATED CIRCUII /¿ P D 4 2 4 1 0 0 , 4 2 4 1 0 0 -1 4 M-BIT DYNAMIC RAM 4 M-WORD BY 1-BIT, FAST PAGE MODE Description The fiPD 424100, 424100-L are 4 194 304 words by 1 bit dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.

Contextual Info: NEC Electronics Inc. MC-424000A9, -424100A 9 4,194,304 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C -424000A 9 and the MC-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o p e ra te from a single + 5 -v o lt power supply.

424100A

Contextual Info: MC-424100A9 4,194,304 X 9-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A9 is a fast-page 4,194,304-word by 9-bit dynamic RAM module designed to operate from a single +5-volt power supply. Advanced CMOS circuitry, includ­

MC-424000A9BA

Abstract: C-424000A9BA simm 30-pin 9-bit MC-424000A9
Contextual Info: jW X Y * t i M2à W NEC Electronics Inc. Description The M C-424000A9 and the M C-424100A9 are fast-page 4,194,304-word by 9-bit dynam ic RAM modules de­ signed to o perate from a single + 5 -v o lt power supply. Advanced CM OS circuitry, including a single-transistor

IEC536

Abstract: E137632 Fuse T3A EN61000-6-2
Contextual Info: 3 Power Supplies SDP Low Power DIN Rail Series The compact, lightweight DIN Rail power supplies come in output voltages from 5 to 48 Vdc and power ratings of up to 100 Watts. These extra small, efficient units are designed specifically for the industrial environment. Each

Fuse T3A

Abstract: IEC536 DIN IEC 68-2-2 EMC 2428 power supply connector EN61000-6-2 EN61000-6-4 IEC53 EN6100062 UL60079-15
Contextual Info: 4 Power Supplies SDP Low Power DIN Rail Series The compact, lightweight DIN Rail power supplies come in output voltages from 5 to 48 Vdc and power ratings of up to 100 Watts. These extra small, efficient units are designed specifically for the industrial environment. Each

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

Contextual Info: 4 Power Supplies SDN-P DIN Rail Series The SDN DIN Rail power supplies provide industry leading performance. Sag Immunity, transient suppression and noise tolerant, the SDN series ensures compatibility in demanding applications. Power factor correction to meet European

Contextual Info: Appendix to MKP385 www.vishay.com Vishay BCcomponents Detailed Ratings ELECTRICAL DATA 1 URDC (V) CAP. ( F) 0.011 min. 160 82 max. 0.010 min. 250 62 max. 0.0043 min. 400 27 max. 0.0015 min. 630 15 max. 0.001 min. 850 10 max. 0.00047 min. 1000 6.8 max. 0.00047 min.

Contextual Info: n_l P.C. BOARD THICKNESS NOTES: 1 MATERIALS: 2) 3) A) 5) 6) 7) 8) HOUSING PARTS ARE MADE OF POLYESTER. RATED U.L. 94 V-O. COLOR IS BLACK. TERMINALS ARE .015/<0.38) THICK PHOSPHOR BRONZE, BOTTOM SEAL IS MYLAR. TERMINAL PLATING OPTIONS PER E S -0 0 - * * * :

424100-70

Contextual Info: bM2 7 SSS 0 0 4 1 7 ^ 3 0 1 S •NECEj DATA SHEET NEC M OS INTEGRATED CIRCUIT ELECTRON D EVICE /¿424100-L 4M BIT DYNAMIC CMOS RAM FAST PAGE MODE DESCRIPTION The NEC ¿(424100-L is a 4194304-w ord by 1 bit dynam ic CM O S RAM w ith optional fast page m ode. CM OS

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

MW-66

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-424000A32, 424000A36 SERIES 4 M-WORD BY 32-BIT, 4 M-WORD BY 36-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-424000A32 series is a 4,194,304 words by 32 bits dynam ic RAM m odule on which 8 pieces o f 16 M DRAM: /jPD4217400 are assembled.

MN12261

Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating

Sony CXA1191M

Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
Contextual Info: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22