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    Toshiba America Electronic Components

    Toshiba America Electronic Components MG400J2YS40

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    MG400J2YS40 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    GT250101

    Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
    Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-99a1a2-99b1agt250101mg150j2ys40+8mg75q2ys11mg400q1us11mg200q1js9mg75j2ys40mg50j6es40mg200q2ys91mg75j6es40mg100q2ys9 PDF

    MG75J2YS40

    Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
    Contextual Info: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a


    OCR Scan     		2-109c1amg50j6es50mg75j6es502-94a2a+16mg100j6es50mg50q6es11mig150j201hmig200j201hmig75q201hmig100q201hmg75j2ys40mg100j2ys45mg50j2ys45mg150j2ys45mg300q1usmg400q1us11mg400j2ys40mg150j2ys40mg200q2ys1mg200j2ys45 PDF