7SL4142 Search Results

Contextual Info: SAMSUNG ELECTRONICS INC 42E » 7=^4142 DQIOTST G ÊSSMGK P R ELIM INA R Y “ BiCMOS SRAM KM68B257 3 2 K X 8 Bit BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Ultra-Fast Access Time —Commercial: 10ns, 12ns, 15ns —6ns Output Enable time • Low Power Dissipation

Contextual Info: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS-L is a 2M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: KM416C1004BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

KM29N32000TS

Abstract: km29n32000 0D243 E5HY
Contextual Info: KM29N32000TS/RS 4M X FLASH MEMORY 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the

KM4216C

Contextual Info: KM4232W259 CMOS WINDOW RAM FEATURES DESCRIPTION • 1M Byte Frame-Buffer on a single chip • 1.6 G-Byte/Second Internal Bus: - Fast W indow Drawing Operations - F ill at up to 1.6 G Byte/Second -A lig n e d BitBLT at up to 0 .6 4 G-Byte/Second • 8-Column B lock W rite w ith B it and Byte Masking