KMM466F20 Search Results

Contextual Info: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh G ENER AL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS-L is a 2M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: KMM466F203BS1 -L KMM466F213BS1 -L DRAM MODULE KMM466F203BS1-L & KMM466F213BS1-L EDO Mode 2M x 64 DRAM SODIMM using 2MX8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES T he S am sung K M M 4 6 6 F 2 0 1 3 B S 1 -L is a 2M x6 4 b its D ynam ic

Contextual Info: KMM466F203CS1 -L KMM466F213CS1 -L DRAM MODULE KMM466F203CS1-L & KMM466F213CS1-L EDO Mode 2M x 64 DRAM SODIMM using 2MX8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES T he S am su ng KM M 466F20 1 3CS1 -L is a 2 M x6 4 b its D ynam ic

km48v2104bs

Contextual Info: KMM466F203BS1-L D R A M Mo d ul e ELECTRONICS KMM466F203BS1 -L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F20 1 3BS1-L is a 2M bit x 64 Dynamic RAM high density memory module. The

Contextual Info: KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE 2Mx64 SODIMM 2MX8 Base Revision 2.0 November 1997 -1- Rev. 2.0 (Nov. 1997) KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE Revision History Version 2.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer.

Contextual Info: KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE KMM466F203CS2-L & KMM466F213CS2-L EDO Mode 2M x 64 DRAM SODIMM using 2MX8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F20 1 3CS2-L is a 2Mx64bits Dynamic Part Identification

Contextual Info: KMM466F203CS2-L KMM466F213CS2-L DRAM MODULE KMM466F203CS2-L & KMM466F213CS2-L EDO Mode 2M x 64 DRAM SODIMM using 2Mx8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F20 1 3CS2-L is a 2Mx64bits Dynamic RAM high density memory module. The Samsung

Contextual Info: KMM466F203BS-L KMM466F213BS-L DRAM MODULE KMM466F203BS-L & KMM466F213BS-L EDO Mode without buffer 2Mx64 based on 2Mx8, 2K & 4K Refresh, 3.3V, Low Power/Self-Refresh GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KMM466F20 1 3BS-L is a 2M bit x

samsung 203c

Contextual Info: KM M 4 6 6 F 2 0 3 C S 2 - L KM M466F2 1 3CS2-L DRAM MODULE KM M 46 6F 20 3C S 2- L & KMM4 66F 21 3CS2-L EDO Mode 2M x 64 DRAM SODIMM using 2MX8, 2K & 4K Refresh, 3.3V, Low power/Self-Refresh F E A TU RE S G E N E R A L DESCRI PTI ON • Part Identification

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

KMM366F213BK6

Abstract: KMM364E124BJ6 KMM366F213BK-6 KMM374F410BK6 83AK KMM366F410BK6 KMM374F400BK6 KMM366F400BK6 124BT-L7 KMM364C12
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line Memory Module SIMM l-l. Fast Page ( FP ) Mode ;16MBased 2Mx36 4Mx32 4Mx3fi 8Mx32 8Mx3C 64MBased>- KMM5321200BW/BWG-6.Tf KMM5321200BW/BWGKMM5361203BW/BWG-6 KMM5361203BW/BWG-7 KMM5322200BW/BWG-6 KMM5322200BW/BWG-7

1MX16

Abstract: KMM5324104BK KMM5321200B
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE DRAM Module Org. Part No. Feature 4 Byte Single In-Line Memory Module 5 V 1Mx32 1Mx36 2Mx32 4Mx36 8Mx32 8Mx36 1— -— — r ÍF P .S G , PPD 1Mx16, SOJ 60/70 750 1024/16 r ~ m o w KMM5321200BW/BWG

KMM364C12

Abstract: KMM53616000AK KMM5322100BK 2MX32 1MX16
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Intro d u ctio n . DRAM Module- 13 13 DRAM for