44V4100 Search Results

Contextual Info: KM44C4000C, KM44C4100C KM44V4000C, 44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

Contextual Info: KMM364V41OAK/AS DRAM MODULE KMM364V41 OAK/AS Fast Page Mode 4Mx64 DRAM DIMM , 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM364V410A is a 4M bit x 64 Dynamic RAM high density memory module. The Samsung KMM364V410A consists of sixteen CMOS 4Mx4bit DRAMs in SOJ/TSOP-JI 300mil packages

44V4100

Contextual Info: 44V4100BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

Contextual Info: DRAM MODULE KMM372V41 OAK/A S KMM372V41 OAK/AS Fast Page Mode 4Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM372V410A is a 4M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V410A consists of eighteen