MB8464 Search Results

FUJITSU MB8464A

Abstract: MB8464A-10-W mb8464a MBB464A 990kc MB8464A-15-W
Contextual Info: FUJITSU M I C R O E L E C T R ON I C S 23E D • 3 7 4 1 7 b 2 '0007^55 5 ■ T -4 k -2 3 > - 2 , October 1989 Edition 1.0 _ DATA S H E E T FUJITSU - MB8464A-10-W/-15-W CMOS 64K-BIT LOW POWER SRAM 8.192WORDS x 8BIT CMOS STATIC RAM WITH LOW POWER AND DATA RETENTION

MB8464A

Abstract: fujitsu 1988 MB8464A-10 tv suffix fujitsu 80 PINS
Contextual Info: January 1990 Edition 1.0 FUJITSU DATA SHEET MB8464A-10-X/-10LL-X/-15-X/-15LL-X CMOS 64K-BIT LOW POWER SRAM 8,192-WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB8646A-X is a 8,192-word by 8-bit static random access memory fabricated with a CMOS sillicon gate process. The memory utilizes asynchronous

MB8464-15

Abstract: MB8464-12L mb8464 mb8464-12 12-M5 MB846412L
Contextual Info: FU JIT SU MICROELECTRONICS INC. CMOS 65,536-BIT STATIC RANDOM ACCESS MEMORY MB8464 MB8464-L i I' PRELIMINARY DESCRIPTION The Fujitsu MB8464 is a 8192 word by 8-bit static random access memory. This device is fabricated using a combination of Fujit­ su’s high-speed N-Channel MOS siiicongate technology and the low power con­

8464a

Abstract: MB8464A-10-W heme LC mb8464a
Contextual Info: October 1989 Edition 1.0 F u jrrs u DATA SHEET MB8464A-10-w/-15-w CMOS 64K-BIT LOW POWER SRAM 8,192WORDS x 8BIT CMOS STATIC RAM WITH LOW POWER AND DATA RETENTION The Fujitsu MB8464A Is a 8 192-word by 8-bit static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be

LH5164

Abstract: km6264 oki cross reference w24512 cross hm6264 KM62256 MSM5178 uPD43256 PD4364 MSM51257
Contextual Info: CROSS REFERENCE GUIDE SLOW SPEED CMOS SRAMs WINBOND HITACHI W241024 HM628128 W24512 - W24257 HM62256P/FP W2465 HM6264 SONY CXK581000P/M - CXK58257P/SP/M CXK5864BP FUJITSU MB841000 - MB84256 //PD43256 / PD4364 NEC - MB8464 TOSHIBA TC551001PL/FL - TC55257BP/BF

MB8464R-10L

Abstract: MB8464R FPT-28P-M02 MB8464 fujitsu 8464 MB8464R10L
Contextual Info: FUJITSU November 1992 Edition 2 .1A DATA SHEET M B 8464 R-70LL, -10LL CMOS 64K Low Power SRAM with Data Retention The Fujitsu MB8464R is an 8,192-word x 8-bit static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous

mb8464

Abstract: DIP-28P-M04 MB8464R-10L
Contextual Info: FEB 1 6 iS93 Novem ber 1992 Edition 2 . 1A FUJITSU DATA S H E E T MB8464R-70LL, - i o l l CMOS 64K Low Power SRAM with Data Retention The Fujitsu MB8464R is an 8,192-word x 8-bit static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous

MB8464A-10

Abstract: fujitsu mb8464a MB8464A MB8464 fujitsu 1988 777T7
Contextual Info: FUJITSU MICROELECTRONICS 47E D 37^7^2 DDlöRHS T • F U I cP April 1990 Edition 3.0 FUJITSU DATA SHEET MB8464A-80/-80U-80LL/-10/-10U-1OLL/-15/- 15U-15LL CMOS 64K BIT LOW POWER SRAM 8K Words x 8 Bits CMOS Static RAM with Low Power and Data Retention The Fujitsu MB8464A is a 8,192 words x 8 bits static random access memory

Contextual Info: F U JI TS U M I C R O E L E C T R O N I C S 47E D • 3 7 4 T 7 b E O O IT D? ! 2 ■ f h i January1990 Edition 1.0 FUJITSU DATA SHEET MB8464A-10-X/-10LL-X/-15-X/-15LL-X CMOS 64K-BIT LOW-POWER SRAM 8K Words x 8 Bits CMOS Static RAM for Extended Temperature Operation

MB8464A

Abstract: MB8464A-10 80LL
Contextual Info: April 1990 Edition 3.0 FUpSU DATA SHEET : MB8464A-80/-80L/-80LL/-10/-10L/-10LU-15/-15U-15LL CMOS 64K BIT LOW POWER SRAM 8K Words x 8 Bits CMOS Static RAM with Low Power and Data Retention The Fujitsu MB8464A is a 8,192 words x 8 bits static random access memory

MB8464A

Abstract: iw 1688 B8464A
Contextual Info: January1990 Edition 1.0 FUJITSU DATA SHEET MB8464A-10-X/-10LL-X/-15-X/-15LL-X CMOS 64K-BIT LOW-POWER SRAM 8K Words x 8 Bits CMOS Static RAM for Extended Temperature Operation The Fujitsu MB8464A-X is an 8,192 words x 8 bits static random access memory fabricated with a CMOS silicon gate process. The memory uses asynchronous

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

mb8464

Abstract: MB8464-15-W MB8464-15W MB8464-15
Contextual Info: FUJITSU MICROELECTRONICS 7fl D E I 374ci7b5 □GD33SÛ Û T Preliminary F U J IT S U MOS M em ories • M B 8 4 6 4 -1 5 -X , M B 8464-15-W , M B 8 4 6 4 -2 0 -W CMOS 65,536-Bit Static Random Access Memory with Data Retention Mode D e a c rip tio n The Fujitsu MB&464-X/W Is a 8,192 word by 8-bit static random

organizational structure samsung

Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
Contextual Info: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

MN12261

Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating

CX20106A

Abstract: GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
Contextual Info: TABELA DE EQUIVALÊNCIAS SEMICONDUTORES GOLDSTAR formerly hosted by http://www.robvendas.hpg.ig.com.br/APOST/GOLD.HTM 1 of 6 G53 GAS105 LAG553-2 2SB463 - - 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE4 GE1012 48-124376 MOC3012 - - GE3009 GE3010

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

upd444c

Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238

CROSS MITSUBISHI

Abstract: UPD446 tc55257 tmm2016 sony cross reference sgs thomson tmm2018 AKM6264 hm6264 IDT71256
Contextual Info: SRAM CROSS REFERENCE PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. 2K X 8 Fujitsu Goldstar Hitachi Hitachi Hyundai IDT NEC RCA SGS Thomson Toshiba Toshiba Toshiba UMC Winbond MB8416 GM76C28 HM6116 HM6216 HY6116

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference