MB8464A Search Results

FUJITSU MB8464A

Abstract: MB8464A-10-W mb8464a MBB464A 990kc MB8464A-15-W
Contextual Info: FUJITSU M I C R O E L E C T R ON I C S 23E D • 3 7 4 1 7 b 2 '0007^55 5 ■ T -4 k -2 3 > - 2 , October 1989 Edition 1.0 _ DATA S H E E T FUJITSU - MB8464A-10-W/-15-W CMOS 64K-BIT LOW POWER SRAM 8.192WORDS x 8BIT CMOS STATIC RAM WITH LOW POWER AND DATA RETENTION

MB8464A

Abstract: fujitsu 1988 MB8464A-10 tv suffix fujitsu 80 PINS
Contextual Info: January 1990 Edition 1.0 FUJITSU DATA SHEET MB8464A-10-X/-10LL-X/-15-X/-15LL-X CMOS 64K-BIT LOW POWER SRAM 8,192-WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB8646A-X is a 8,192-word by 8-bit static random access memory fabricated with a CMOS sillicon gate process. The memory utilizes asynchronous

8464a

Abstract: MB8464A-10-W heme LC mb8464a
Contextual Info: October 1989 Edition 1.0 F u jrrs u DATA SHEET MB8464A-10-w/-15-w CMOS 64K-BIT LOW POWER SRAM 8,192WORDS x 8BIT CMOS STATIC RAM WITH LOW POWER AND DATA RETENTION The Fujitsu MB8464A Is a 8 192-word by 8-bit static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be

MB8464A-10

Abstract: fujitsu mb8464a MB8464A MB8464 fujitsu 1988 777T7
Contextual Info: FUJITSU MICROELECTRONICS 47E D 37^7^2 DDlöRHS T • F U I cP April 1990 Edition 3.0 FUJITSU DATA SHEET MB8464A-80/-80U-80LL/-10/-10U-1OLL/-15/- 15U-15LL CMOS 64K BIT LOW POWER SRAM 8K Words x 8 Bits CMOS Static RAM with Low Power and Data Retention The Fujitsu MB8464A is a 8,192 words x 8 bits static random access memory

Contextual Info: F U JI TS U M I C R O E L E C T R O N I C S 47E D • 3 7 4 T 7 b E O O IT D? ! 2 ■ f h i January1990 Edition 1.0 FUJITSU DATA SHEET MB8464A-10-X/-10LL-X/-15-X/-15LL-X CMOS 64K-BIT LOW-POWER SRAM 8K Words x 8 Bits CMOS Static RAM for Extended Temperature Operation

MB8464A

Abstract: MB8464A-10 80LL
Contextual Info: April 1990 Edition 3.0 FUpSU DATA SHEET : MB8464A-80/-80L/-80LL/-10/-10L/-10LU-15/-15U-15LL CMOS 64K BIT LOW POWER SRAM 8K Words x 8 Bits CMOS Static RAM with Low Power and Data Retention The Fujitsu MB8464A is a 8,192 words x 8 bits static random access memory

MB8464A

Abstract: iw 1688 B8464A
Contextual Info: January1990 Edition 1.0 FUJITSU DATA SHEET MB8464A-10-X/-10LL-X/-15-X/-15LL-X CMOS 64K-BIT LOW-POWER SRAM 8K Words x 8 Bits CMOS Static RAM for Extended Temperature Operation The Fujitsu MB8464A-X is an 8,192 words x 8 bits static random access memory fabricated with a CMOS silicon gate process. The memory uses asynchronous

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258

MN4464-08LL

Abstract: MB8464-15L MN4464S-08LL MB8464-15 MB8464-12L m88464a-10ll-x MK48H64-70 MK48H64-45 MCM60L64-10 MCM6064-10
Contextual Info: - 90 - 6 4 K CMOS X -Í -y m % ít * OC .V -f ÿ S t a t i c $ R A M 8 1 9 2 x 8) % tí 2 8 P I N TAAC max (ns) TCAC nax (ns) TOE nax (ns) TOH min (ns) TOD max (ns) TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) TUR max (ns) V D D or V C C I DD (V)

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE

MN12261

Abstract: MN1225 N12c M5M4400 256K RAM HM62256 47464 mn4464 n1224 MN41256A 44256 ram
Contextual Info: MOS Memories • EARO M s Memory Size bit 32 T ype No. M em ory Access Supply Com position Tim e Voltage (Word X bit) m ax. (ns) (V) M N 1234 2 X 16 256 M N 1212A 16 X 16 5 272 M N 1218A 17 X 16 10 Power C onsum ption max. (mW ) Package Process O perating

UM61256AK-15

Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE

um61256ak-15

Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
Contextual Info: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7

MB8464-15L

Abstract: MB8464-15 MB8464-12L m88464a-10ll-x MCM6264-20 motorola 6264 ram M88464A MCM60L64 mcm6164 MB8464A-10L
Contextual Info: - 90 64 K X m % ít * OC -Í CMOS -y -f .V ÿ S t a t i c $ RAM 8 192 tí x % 8) 28PIN TAAC max (ns) TCAC nax (ns) TOE nax (ns) TOH min (ns) TOD max (ns) TWP min (ns) TDS min (ns) TDH min (ns) TWD min (ns) TUR max (ns) V D D or V C C I DD (V) (mA) 6264 X t) [*typ]

8464a

Abstract: MBB464A 8464A-10 MB6464 3170L mb8464a
Contextual Info: F UJITSU M I C R O E L E C T R ON I C S 7fl D E | 374T7t,2 □□□33ÖQ 1 3749762 FUJITSU MICROELECTRONICS 7ÖC 033ÖÜ u _-i T-46-23- Preliminary F U J IT S U M OS M em o rie s • M B 8464A -10-W , M B 8464A -15-W CM OS 65,536-Bit Static Random Access Memory

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

hm6265

Abstract: SRM2264LC12 SRM2A256SLC70 SRM2A256LC 28-pin SRM2A256LC10 SRM2A256LLC70 SRM2A256SLC SRM2B257SLM70 srm20257lc
Contextual Info: 4-1 Memories Static RAMs CMOS Static RAMs 5V operation P art num ber Pow er C ap acity Qganizafton supply (V) Ambient Operating Standby (mA, Max.) ( f t A, Max.) range OC) Access time (ns, Max.) 85 SRM2264LC90 SR M 2264LCio Current consumption 64K 8KX8