MB8416 Search Results

Contextual Info: FUJITSU MOS M em ories • M B 8 4 1 6 -2 5 -W CMOS 16,384-Bit Static Random Access Memory D e s c rip tio n The Fujitsu MB8416 is a 2048-word by 8-bit sta tic random access memory fabricated w ith a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be m aintained in any state

MB8416A-15

Abstract: 8410A 8416a MB8416A-12 MB8416A-12U15L
Contextual Info: F U JIT S U MOS Memories m M B 8 4 1 6 A -1 2 , M B 8416A -12L , M B 8 4 16 A -1 5, M B 8410A -15L CM O S 16,384-Bit Static Random Access Memory Description The Fujitsu MB8416A is a 2048-word by 8-bit static random ac­ cess memory fabricated with CMOS silicon gate process. The

MB8416-20L

Abstract: DIP-24C-C03 mb8416 MB8416-20 PH 37M
Contextual Info: FUJITSU MICROELECTRONICS 78 DE| 37417bB c:iO !.1rm 6 _ F U J IT S U N ICS, INC. M ICRO ELECTRO CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY T_46_23 MB8416-20 MB8416-20L DESCRIPTION The Fujitsu MB8416 is a 2048 word by 8-bit static random ac­ cess memory fabricated with high

B8416

Abstract: MB8416-20L MB8416
Contextual Info: F U JIT S U MB8416-20 MB8416-20L M IC R O E L E C T R O N IC S . IN C. CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY ^ ¿4 Í 4 L C £- DESCRIPTION The Fujitsu M B8416 is a 2048 word by 8-bit static random ac­ cess m em ory fabricated w ith high density, high reliability Com ple­

CROSS MITSUBISHI

Abstract: UPD446 tc55257 tmm2016 sony cross reference sgs thomson tmm2018 AKM6264 hm6264 IDT71256
Contextual Info: SRAM CROSS REFERENCE PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. 2K X 8 Fujitsu Goldstar Hitachi Hitachi Hyundai IDT NEC RCA SGS Thomson Toshiba Toshiba Toshiba UMC Winbond MB8416 GM76C28 HM6116 HM6216 HY6116

MB8416A-15

Abstract: MB8416A-15L MB8416A-12 TC5517 MB8416A-12L MB8416A
Contextual Info: F U JIT S U MOS Memories • M B8416A-12, M B8416A-12L, M B8416A-15, M B8416A-15L CMOS 16,384-Bit Static Random Access Memory D escription The Fujitsu MB8416A Is a 2048-word by 8-bit s ta tic random a c ­ c e ss memory fabricated with C M O S silico n gate process. The

Contextual Info: F U JIT S U M IC R O E L E C T R O N IC S MB8416-20 MB8416-20L INC. CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu M B8416 is a 2048 word by 8-bit static random ac­ cess memory fabricated with high density, high reliability Comple­ mentary MOS silicon-gate tech­

mb8464-15l

Abstract: MB8464-10L MB8416A-15 MB8464 24-PIN MB8416-20L MB8416A-12/15 MB8416A-12L
Contextual Info: CMOS Static RAMs Q u ic k G u id e T o P ro d u c ts in T h is S e c tio n Device MB8416-20 Organization Access Time max Power Supply Volta Power Dissipation Package Page 24-pin 3-2 2K x 8 200 nS +5 330 m W /55/iW MB8416-20L_2K x 8 200 nS +5 330 mW/5.5 nW 24-pin

MB6416

Contextual Info: — - —* •i -•— ^ ^ ■— FUJITSU M I C R O E L E C T R ON I C S 7fl - — - - - - - - ^ — -i i i ,. D È I 37MT7bS 000331D S I '- ■ ■ - - T-46-23-12 - I MOS Memories MB8416-25-W CMOS 16,384-Bit Static Random Access Memory Daaerlptlon The Fujitsu MB8416 Is a 2048-word by 8-blt static random access

MB8416

Abstract: MB8416-25-W
Contextual Info: FUJITSU MOS Memories • MB8416-25-W CMOS 16,384-Bit Static Random Access Memory D m erlp tlo n The Fujitsu MB8416 is a 2048-word by 8-bit static random access memory fabricated w ith a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be maintained in any state

MB8416-20L

Abstract: MB8416-20 TC5517 MB8416 HM6116 PD446
Contextual Info: F U J IELECTRO T S U NICS INC. _ M ICRO CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY MB8416-20 MB8416-20L DESCRIPTION T h e F u jits u M B 8 4 1 6 is a 2048 w o rd b y 8 -b it s ta t ic ra n d o m a c ­ c e s s m e m o ry fa b ric a te d w ith h ig h d e n s ity , h ig h re lia b ility C o m p le ­

MB8416A-15

Abstract: MB8416A-15L MB8416A-12L MB8416A MB8416A-12 TC5517 MBB416A-12 mb8416a15l HM6116 tc-5517
Contextual Info: F U J IT S U MOS Memories • M B 8 4 1 6 A - 1 2 , M B 8 4 1 6 A - 1 2 L , M B 8 4 1 6 A - 1 5 , M B 8 4 1 6 A - 1 5 L CMOS 16,384-Bit Static Random Access Memory DMortptton The Fujitsu MB8416A Is a 2048-word by 8 -bit s ta tic random ac­ cess mem ory fabricated w ith CMOS silicon gate process. The

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: FUJITSU HICROELECTRONICS 75 d Ë | 374^7^5 000333^ 4 3749762 FUJITSU MICROELECTRONICS 78C 03339 FU JITSU M OS M em ories • M B 8 4 1 8 A -1 2 , M B 8 4 1 8 A -1 2 L, M B 8 4 1 8 A -1 5 , M B 8 4 1 8 A -1 5 L CMOS 16,384-Bit Static Random Access Memory Daaorlptlon

UPD444C

Abstract: SRM2264LC10 hm6116 SRM2264LCT10
Contextual Info: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

TMS4464

Abstract: TMS 2764 Texas Instruments IC mk4564 mcm6256 tms4500a Fuji Electric tv schematic diagram ET 439 power module fuji mcm6665 74L5138 TMS4500
Contextual Info: SMYOOO2 . ,MOS Memory Data Book 1984 II I III \' h' \/ Commercial and Military , :\ Specifications ' 1'/ ! . .Jf TEXAS INSTRUMENTS Alphanumeric Index, Table of Contents, Selection Guide Interchangeability Guide _ Glossary/Timing Conventions/Data Sheet Structure

MB8416A-15

Abstract: MB8416A-15L LH5116-15 MB8416A-12L lc3518 MB8416-20 MK48Z02-15 LH5115-70 MB8416A MB8416-15
Contextual Info: 52 16 K X 4 CMOS -y + y iSglSffl £ £ a Ä CO TAAC wax ns TCAC max (ns) TOE •tax (ns) TOH (ns) TOD max (ns) f S t a t i c ft TWF’ TDS min min (ns) (ns) 95 TDH ■in (ns) LC3516A/AM/AS-12 SANTO -30-85 50 LC3516A/AM/AS-15 SANYO -30— 85 150 150 5 120

MB8128-15

Abstract: MB8128-10 MB8128 8128-10 MBM2716 mb8128-15 cross MB6128-15
Contextual Info: MB8128-10 MB8128-15 FU JITSU MICROELECTRONICS. INC. NMOS 16,384-BIT STATIC RANDOM ACCESS MEMORY DESCRIPTION The MB8128 is fabricated using N-channel silicon gate MOS tech­ nology. It uses fully static cir­ cuitry throughout and therefore requires no clocks or refreshing

upd444c

Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
Contextual Info: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238

6116 RAM

Abstract: ic 6116 TMM2016 6116 SRAM 6116 ram 6116 6116 memory 6116 CMOS RAM 6116 static RAM chip SY2128
Contextual Info: 2016/6116/9128 2K x 8 SRAM Page 1 of 5 2016/6116/9128 - 2048x8 bit Static RAM Description The 2016/6116 series of Static RAMs are 16,384 bit memories organized as 2,048 words by 8 bits and operates on a single +5V supply. 2016's and equivalents are generally NMOS or MOS

lc3518

Abstract: LH5116-15 MB8416A-15 mk48z02-25 MB8416A-15L MK48Z02 mb8416 MB8416A 24PIN CY7C128-45
Contextual Info: - 16K nMOS 'f X S t a t i c RAM 2 0 4 8 x 8 f iî % it £t OC) TAAC aax (ns) TCAC (us) TOE max (ns) TOH min (ns) TOD max (ns) TWP «in (ns) TDS •in (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) A M « ¿&&ÍEH m 24PIN IDD aax (ibA) I DD STANDBY