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    CY7C183 Search Results

    CY7C183 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CY7C183 CY7C184 CYPRESS SEMICONDUCTOR Features • Pin-programmable into directmapped or two-way set-associative format • CMOS for optimum speed/power • H ighspeed — 20 n s • Common I/O • Internal address latch • TTL-compatible inputs and outputs


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    cy7c183cy7c184 PDF

    Contextual Info: PRELIM IN ARY CYPRESS SEMICONDUCTOR CY7C183 CY7C184 2 x 4096 x 16 Cache RAM Features • Pin programmable into direct mapped or two-way set associative format • CMOS for optimum speed/ power • High speed—25 ns • Common I/O • Internal address latch


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    cy7c183cy7c18416-bit PDF

    CY7C183

    Abstract: CY7C184 CY7C184-25JC oec18 7C183
    Contextual Info: CY7C183 CY7C184 CYPRESS SEMICONDUCTOR Features • Pin-programmable into directmapped or two-way set-associative format • CMOS for optimum speed/power • High speed — 20 ns • Common I/O • Internal address latch • TTL-compatible inputs and outputs


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    cy7c183cy7c184cy7c184are16-bit+435lmbcy7c184-25jcoec187c183 PDF

    7C184

    Contextual Info: CY7C183 CY7C184 CYPRESS SEMICONDUCTOR Features • Pin-programmable into directmapped or two-way set-associative format • CMOS for optimum speed/power • H ighspeed — 20 ns • Common I/O • Internal address latch • TTL-compatible inputs and outputs


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    cy7c183cy7c1847c184 PDF

    40ebl

    Contextual Info: Data Sheet January 1992 ATT7C183 ATT7C184 ^ A T fiT Microelectronics High-Speed CMOS SRAM 128 Kbit 2 x 4K x 16 or 8K x 16 Cache-Data Features • High-speed — 25 ns maximum access time Plug-compatible with Cypress CY7C183/184 ■ Direct map or two-way set associative


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    att7c183att7c184cy7c183/18448-pin+37c19452-pin40ebl PDF

    toshiba 32k*8 sram

    Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
    Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258


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    km4164km41c256km41c257km41c258+15km41c464km41c466km41c1000km41c1001km41c1002km44c256toshiba 32k*8 sramm5m23c100m5m5265seeq dq2816am5m23c400mb832001hitachi 64k dramtc511000tc51464 PDF

    STATIC RAM 8464

    Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
    Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)


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    l7c167l7c168l7c170l7c171+16l7c172l6116/l6116ll7c183cy7c183l7c184static ram 8464ims1433ssm6116ims1630ssm6171ssm7188hitachi selection guidessm7164hm6264ic 6116 ram PDF

    Contextual Info: L7C183/184 2 x 4K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 20 ns worst-case □ Low Power Operation


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    cy7c183/18448-pin52-pinl7c183/184+1z0000z00002z PDF

    400X1

    Abstract: CY7C183
    Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR Features • Pin-programmable into directmapped or two-way set-associative format • CMOS for optimum speed/power • High speed — 25 ns • Common I/O • Interna! address latch • TTL-compatible inputs and outputs • Capable o f withstanding greater than


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    cy7c183cy7c1847c184-45lm400x1 PDF

    Contextual Info: LOGIC DEVICES INC 2bE D • SSbSTGS OGQlQib 3 ■ 2 x 4 K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology


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    cy7c183/18448-pin52-pinl7c183/184+2l7c183l7c184 PDF

    CY27S03A

    Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
    Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability


    Original
    cy7c122cy27s03a15jc10cy7c190+3cy7c9101cy7c122 dievic068a user guide PDF

    8k x 16 bit ram

    Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR Features • Pin-program m able into directmapped or two-way set associative format • CM OS for optim um speed/power • High speed — 25 ns • Com m on I/O • Internal address latch • TTL-com patible inputs and outputs


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    cy7c183cy7c184cy7c184-35lmbcy7c184-45jc+3cy7c184-45lmb8-00090-a8k x 16 bit ram PDF

    CY7C169

    Abstract: 54600
    Contextual Info: Thermal Management CYPRESS Part Number CY7B173 CY7B174 CY7B180 CY7B181 CY7B185 CY7B186 CY7B191 CY7B192 CY7B194 CY7C122 CY7C123 CY7C128 CY7C128A CY7C130 CY7C131 CY7C132 CY7C136 CY7C140 CY7C141 CY7C142 CY7C146 CY7C147 CY7C148 CY7C149 CY7C150 CY7C157 CY7C161A


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    cy7b173cy7b174cy7b180cy7b181+8cy7b185cy7b186cy7b191cy7b192cy7b194cy7c122cy7c16954600 PDF

    NEC B1100

    Abstract: P82B305 TC17G022 weitek 1066 SCX6225 MOTOROLA 68012 SAB80286 toshiba tc17g P82C441 TC15G014
    Contextual Info: 4 SEMICONDUCTOR / SOCKET CROSS REFERENCE LIST mm m DEVICE NUMBER # OF PINS TYPE MILL-MAX PART NUMBER AMD 3500 673104A 80186 80186 80286 8086/88 9513A AM29000 AM 29117 AM29300/325 AM29332/334/434 AM29368 AM29C101 AM29C325 AM29C327 AM29C660 AM 29 C827A/828A


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    73104aam29000am29300/325am29332/334/434+16am29368am29c101am29c325am29c327am29c660c827a/828anec b1100p82b305tc17g022weitek 1066scx6225motorola 68012sab80286toshiba tc17gp82c441tc15g014 PDF