CY7B194 Search Results

Contextual Info: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when

b1944

Abstract: CY7B194 CY7B195 CY7B196 7B194 7B195 B194-4
Contextual Info: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — t.4A = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • Output enable OE feature (CY7B195 and CY7B196 only)

Contextual Info: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — tM = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • O utput enable OE feature (CY7B195 and CY7B196 only)

Contextual Info: CY7B194 CY7B195 CY7B196 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed - 12 ns U* The CY7B194, 7B195. and CY7B196 are high-performance BiCMOS static RAMs organized as 65,536 words by 4 bits. Easy

CY7C169

Abstract: 54600
Contextual Info: Thermal Management CYPRESS Part Number CY7B173 CY7B174 CY7B180 CY7B181 CY7B185 CY7B186 CY7B191 CY7B192 CY7B194 CY7C122 CY7C123 CY7C128 CY7C128A CY7C130 CY7C131 CY7C132 CY7C136 CY7C140 CY7C141 CY7C142 CY7C146 CY7C147 CY7C148 CY7C149 CY7C150 CY7C157 CY7C161A

b1944

Abstract: a223c 7B19S-12 10DC IR 3 PINS
Contextual Info: CY7B194 CY7B195 PRELIM INARY CY7B196 = = = = ^ - • -65,536 x 4 Static R/W RAM ~ CYPRESS SEMICONDUCTOR Features Functional Description • H ig h sp eed T he CY7B194, 7B195, and CY 7B196 are high-perform ance BiC M O S static RAM s organized as 65,536 w ords by 4 bits. Easy

Contextual Info: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — 1 \ \ = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • Output enable OE feature (CY7B195 and CY7B196 only)

K7025

Abstract: B4641 24PIN CY7B194-15 CY7C194 EDI8464lp Hitachi Scans-001
Contextual Info: I 12 2 5 6 K X CMOS •i + > S t a t i c ?" « m ¿SfëiËII] M £ ft TAAC £ rc ns) TCAC max (ns) TOE max (ns) TOH min (ns) TOIi max (ns) TWP min (ns) RAM ( 6 5 5 3 6 x 4 ) a TDS min (ns) TDH min (ns) TWD V D D or V C C (ns) TWR max '.ns) (V) 2 4 P I N

CY27S03A

Abstract: 15JC10 CY7C190 cy7c9101 cy7c122 die VIC068A user guide
Contextual Info: Thermal Management and Component Reliability slope of the logarithmic plots is given by the activation energy of the failure mechanisms causing thermally activated wear out of the device see Figure 1 . One of the key variables determining the long-term reliability

CY7C9101

Abstract: CY7C510 CY7C190 cy7c189 G30-88 CY7c910 EA 9394 cy3341 CY6116 cy7c901
Contextual Info: fax id: 8511 Thermal Management Thermal Management and Component Reliability One of the key variables determining the long-term reliability of an integrated circuit is the junction temperature of the device during operation. Long-term reliability of the semiconductor chip degrades proportionally with increasing temperatures following an exponential function described by the