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    CY7B196 Search Results

    CY7B196 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when


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    cy7b194cy7b195cy7b1967b195 PDF

    b1944

    Abstract: CY7B194 CY7B195 CY7B196 7B194 7B195 B194-4
    Contextual Info: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — t.4A = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • Output enable OE feature (CY7B195 and CY7B196 only)


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    cy7b194cy7b195cy7b196b1944+37b1947b195b194-4 PDF

    Contextual Info: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — tM = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • O utput enable OE feature (CY7B195 and CY7B196 only)


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    cy7b194cy7b195cy7b1960015b PDF

    Contextual Info: CY7B194 CY7B195 CY7B196 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed - 12 ns U* The CY7B194, 7B195. and CY7B196 are high-performance BiCMOS static RAMs organized as 65,536 words by 4 bits. Easy


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    cy7b194cy7b195cy7b196y7b196-20dm+1cy7b196-20lmb PDF

    b1944

    Abstract: a223c 7B19S-12 10DC IR 3 PINS
    Contextual Info: CY7B194 CY7B195 PRELIM INARY CY7B196 = = = = ^ - • -65,536 x 4 Static R/W RAM ~ CYPRESS SEMICONDUCTOR Features Functional Description • H ig h sp eed T he CY7B194, 7B195, and CY 7B196 are high-perform ance BiC M O S static RAM s organized as 65,536 w ords by 4 bits. Easy


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    cy7b195cy7bi96cy7b194cy7b196+4b1944a223c7b19s-1210dc ir 3 pins PDF

    Contextual Info: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — 1 \ \ = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • Output enable OE feature (CY7B195 and CY7B196 only)


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    cy7b194cy7b195cy7b196300-mil+128-lead PDF

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


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    41c25641c25741c25841c464+1441c46641c100044c25644c25844c1002tc51257fujitsu 814100tc 55464 toshibahn62304hn623257658128816bhn62324m7202a PDF