CY7B195 Search Results

Contextual Info: CY7B194 CY7B195 CY7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when

b1944

Abstract: CY7B194 CY7B195 CY7B196 7B194 7B195 B194-4
Contextual Info: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — t.4A = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • Output enable OE feature (CY7B195 and CY7B196 only)

Contextual Info: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — tM = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • O utput enable OE feature (CY7B195 and CY7B196 only)

Contextual Info: CY7B194 CY7B195 CY7B196 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed - 12 ns U* The CY7B194, 7B195. and CY7B196 are high-performance BiCMOS static RAMs organized as 65,536 words by 4 bits. Easy

b1944

Abstract: a223c 7B19S-12 10DC IR 3 PINS
Contextual Info: CY7B194 CY7B195 PRELIM INARY CY7B196 = = = = ^ - • -65,536 x 4 Static R/W RAM ~ CYPRESS SEMICONDUCTOR Features Functional Description • H ig h sp eed T he CY7B194, 7B195, and CY 7B196 are high-perform ance BiC M O S static RAM s organized as 65,536 w ords by 4 bits. Easy

Contextual Info: CY7B194 CY7B195 CY7B196 CYPRESS SEMICONDUCTOR • High speed — 1 \ \ = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • Output enable OE feature (CY7B195 and CY7B196 only)

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258