7B196 Search Results

b1944

Abstract: a223c 7B19S-12 10DC IR 3 PINS
Contextual Info: CY7B194 CY7B195 PRELIM INARY 7B196 = = = = ^ - • -65,536 x 4 Static R/W RAM ~ CYPRESS SEMICONDUCTOR Features Functional Description • H ig h sp eed T he CY7B194, 7B195, and CY 7B196 are high-perform ance BiC M O S static RAM s organized as 65,536 w ords by 4 bits. Easy

Contextual Info: CY7B194 CY7B195 7B196 PRELIMINARY CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed — tAA = 10 ns • BiCMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 330 mW • Automatic power-down when

b1944

Abstract: CY7B194 CY7B195 CY7B196 7B194 7B195 B194-4
Contextual Info: CY7B194 CY7B195 7B196 CYPRESS SEMICONDUCTOR • High speed — t.4A = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • Output enable OE feature (CY7B195 and 7B196 only)

Contextual Info: CY7B194 CY7B195 7B196 CYPRESS SEMICONDUCTOR • High speed — tM = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • O utput enable OE feature (CY7B195 and 7B196 only)

Contextual Info: CY7B194 CY7B195 7B196 ADVANCED INFORMATION CYPRESS SEMICONDUCTOR 65,536 x 4 Static R/W RAM Features Functional Description • High speed - 12 ns U* The CY7B194, 7B195. and 7B196 are high-performance BiCMOS static RAMs organized as 65,536 words by 4 bits. Easy

Contextual Info: CY7B194 CY7B195 7B196 CYPRESS SEMICONDUCTOR • High speed — 1 \ \ = 10 ns • BiCMOS for optimum speed/power • Low active power — 850 mW • Low standby power — 160 mW • Automatic power-down when deselected • Output enable OE feature (CY7B195 and 7B196 only)