CY7C140 Search Results

cy7c131-55nc

Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

ebe switches

Abstract: CY7C130 CY7C131 CY7C140 CY7C141 7CJ41-25 7CI40-35
Contextual Info: CYPRESS SEMICONDUCTOR 00 0 3 4 2 1 EbE D 5 • CY7C130/CY7C131 CY7C140/CY7C141 -Z Z A Z . o y n p rrQ C 1024 x 8 Dual-Port Static RAM SEMICONDUCTOR Features Functional Description • 0,8-micron CMOS for optimum speed/power • Automatic power-down • TTL-compatible

Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

Contextual Info: fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS 1K x 8 Dual-Port Static Ram Features Functional Description True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location 1K x 8 organization 0.65-micron CMOS for optimum speed/power

PLCC-52

Abstract: CY7C130 CY7C131 CY7C140 CY7C141 CY7C131-25JC CY7C131-35J Z1014
Contextual Info: CY7C130, CY7C130A CY7C131, CY7C131A CY7C140, CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1K x 8 organization ■ 0.65 micron CMOS for optimum speed and power

7C13135

Abstract: CY7C140-35PC 7C130 CY7C130 CY7C131 CY7C140 CY7C141
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location The CY7C130/CY7C131/CY7C140 and CY7C141 are high-speed CMOS 1K by 8 dual-port static RAMs. Two ports

7C130

Abstract: L1314
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 _ 1024 x 8 Dual-Port Static RAM aT ^ p -¿r CYPRESS ^ SEMICONDUCTOR E ach p o rt has independent control pins; chip enable C E , w rite enable (RyW), and output The CY 7C130/CY7C131/CY7C140/ enable (O E ). TVvo flags are p rovided on each

Contextual Info: CY7C130/CY7C131 _ CY7C140/CY7C141 = SEMICONDUCTOR 1024 x 8 D ual-Port Static R A M Features Functional Description • 0.8-micron CMOS for optimum speed/power T he CY 7C 130/CY7C13 L/CY7C140/ CY7C141 arc high-speed C M O S IK by 8 dual-port static RA M s. Two ports are pro­

cy7c136

Abstract: EME-6300H CY7C13X
Contextual Info: Qualification Report January 1996 QTP# 95152/95487, Version 1.0 2K/1K x 8 Dual-Port Static RAM MARKETING PART NUMBER DEVICE DESCRIPTION CY7C130/131 1K x 8 Dual-Port Static RAM CY7C140/141 1K x 8 Dual-Port Static RAM CY7C132/142 2K X 8 Dual-Port Static RAM

96182

Abstract: 9715 cy7c136
Contextual Info: Cypress Semiconductor Qualification Report QTP# 97045/97154 VERSION 1.1 April, 1997 Dual Port SRAM - R28 Technology CY7C130/131 1K x 8 Dual Port SRAM CY7C140/141 1K x 8 Dual Port SRAM CY7C132/136 2K x 8 Dual Port SRAM CY7C142/146 2K x 8 Dual Port SRAM Cypress Semiconductor

CY7C130

Abstract: CY7C131 CY7C140 CY7C141
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power • High-speed access: 15 ns

C1307

Abstract: cY7c131 I CY7C130 CY7C131 CY7C140 CY7C141 C130-15 C1303 C13017
Contextual Info: fax id: 5200 1CY 7C14 0 CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static Ram Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power

3246A

Contextual Info: fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS 1K x 8 Dual-Port Static RAM Functional Description Features True Dual-Ported memory ceils which allow simulta­ neous reads of the same memory location 1K x 8 organization 0.65-micron CMOS for optimum speed/power

Zl13

Abstract: ZL12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140 C1308 wj 75
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

Contextual Info: ^ S' CY7C130/CY7C131 CY7C140/CY7C141 mm CYPRESS SEMICONDUCTOR • 1024 x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than

893Q

Abstract: CY7C131-55JI bit-slice t913 CY7C1312
Contextual Info: fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static Ram Featu res Functional Description • True Dual-Ported memory cells which allow sim ulta­ neous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power

Zl14

Abstract: C1306 cy7c130-55pc CY7C130 CY7C131 CY7C140 CY7C141 C1303
Contextual Info: fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static Ram Functional Description Features • True Dual-Ported memory cells which allow sim ulta­ neous reads of the sam e memory location • 1K x 8 organization • 0.65-micron CMOS fo r optimum speed/power

CY7C131

Abstract: CY7C130 CY7C140 CY7C141 IDT7130 IDT7140 C1303 C1307
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 DualĆPort Static RAM D Features D D D D speed/power Functional Description Automatic powerĆdown The CY7C130/CY7C131/CY7C140 and CY7C141 are highĆspeed CMOS 1K by 8 dualĆport static RAMs. Two ports are proĆ vided permitting independent access to

7C131

Abstract: TwB 75 CY7C131-15JXI 1K x 4 static ram ttl CY7C141 7C130 CY7C130 CY7C131 CY7C140 7c130-55
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location The CY7C130/CY7C131/CY7C140 and CY7C141 are high-speed CMOS 1K by 8 dual-port static RAMs. Two ports

7C141

Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 « Ë W rT P R R S S lK x 8 Dual-Port Static RAM Features • 0.8-m icron C M O S for optim um speed/pow er • A utom atic power-down • TTL com patible • C apable o f w ith stan d in g greater than 2001V electrostatic discharge

7C1312

Abstract: Cypress 7C130
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

CY7C169

Abstract: 54600
Contextual Info: Thermal Management CYPRESS Part Number CY7B173 CY7B174 CY7B180 CY7B181 CY7B185 CY7B186 CY7B191 CY7B192 CY7B194 CY7C122 CY7C123 CY7C128 CY7C128A CY7C130 CY7C131 CY7C132 CY7C136 CY7C140 CY7C141 CY7C142 CY7C146 CY7C147 CY7C148 CY7C149 CY7C150 CY7C157 CY7C161A

z131

Abstract: Z1314 893Q C140 CY7C130 CY7C131 CY7C140 CY7C141 TSGB
Contextual Info: CYPRESS SEMI CONDUCTOR bSE D • 258ThbE DDGT73M 5TB, «CYP CY7C130/CY7C131 CY7C140/CY7C141 PY ppT ?cq SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • 1TL compatible • Capable of withstanding greater than

cy7c131

Abstract: CY7C130
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­