893Q Search Results

tle 6261 g

Abstract: AoL-12L S-108 SEM 238 TLE TSOP CY7B144 CY7B145 B08L
Contextual Info: 4bE D CYPRESS SEMICONDUCTOR • ESfi^bbS 00ab3SG 2 E3CYP 'T-% -Zl> -\ Z_ PRELIMINARY & CYPRESS ill — ^ s ? SEMICONDUCTOR 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-mlcron BiCMOS for high per­ formance • High-speed access

cy7c131-55nc

Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

Contextual Info: CY7B134 CY7B135 CY7B1342 F# CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional D escription • 0.8-micron BiCMOS for high performance T he CY7B134, CY7B135, and CY7B1342 are high-speed BiCMOS 4K x 8 dual-port

Contextual Info: CY7B131 CY7B141 F# CYPRESS IK x 8 Dual-Port Static RAM Features Functional Description • 0.8-micron BiCMOS for high perform ance • Automatic power-down • M aster CY7B131 easily expands data bus width to 16 or more bits using slave CY7B141 • BÜ5Ÿ output flag on CY7B131; BUSŸ

Contextual Info: • V* CY7C008/009 CY7C018/019 . <wiwy 64K/128K x 8/9 Dual-Port Static RAM Fully asynchronous operation Automatic power-down Features • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • 64K x 8 organization CY7C008

Z1213

Abstract: CY7C132 CY7C136 CY7C146 zl12
Contextual Info: bSE » CYPRESS SEMICONDUCTOR SSÖ'lbbE 0 0 0 ^ 7 4 7 ISb I CYP CY7C132/CY7C136 CY7C142/CY7C146 CYPRESS SEMICONDUCTOR 2K x 8 Dual-Port Static RAM output enable OE . BUSY flags are pro­ vided on each port. In addition, an interrupt Functional Description Features

Contextual Info: PRELIMINARY ^/CYPRESS 2K x 16 Dual-Port Static RAM Features • A v a ila b le in 6 8 - p in P L C C • 0 .8 -m ic r o n C M O S fo r o p t im u m s p e e d / p o w er • P in c o m p a tib le a n d f u n c tio n a lly e q u iv a le n t t o I D T 7 1 3 3 a n d I D T 7 1 4 3

3140ca

Contextual Info: fax id: 5220 CYPRESS CY7C008/009 CY7C018/019 PRELIMINARY 64K/128K x 8/9 Dual-Port Static RAM Features ' Fully asynchronous operation ' Automatic power-down •Expandable data bus to 16/18 bits or more using Mas­ ter/Slave chip select when using more than one device

Contextual Info: fax id: 5221 CYPRESS CY7C027/028 CY7C037/038 PRELIMINARY 32K/64KX 16/18 Dual-Port Static RAM Features • Fully asynchronous operation • Automatic power-down • True Dual-Ported m emory cells which allow simulta­ neous access of the same memory location

Contextual Info: CY7B131 CY7B141 r# CYPRESS IK x 8 Dual-Port Static RAM Features Functional D escription • B U S Y o u tp u t f la g o n C Y 7 B I 3 I ; B U S Y in p u t o n C Y 7 B I 4 I 'H ie C Y 7 B 1 3 1 a n d C Y 7 B I 4 1 a r c h i g h ­ s p e e d B i C M O S IK by K d u a l- p o r t static

Contextual Info: V CYPRESS PRELIMINARY 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy F e a tu re s F u n c tio n a l D escrip tio n • C M O S for optim um speed/pow er • H igh-sp eed access T h e CY7C00f> a n d C Y 7 C 0 1 6 are h ig h ­ s p e e d C M O S 16K x 8 a n d 16K x 9 d u a l­

CY7B144-25LMB

Abstract: f-20l
Contextual Info: CY7B144 _ CY7B145 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high per­ formance • High-speed access — 15 ns commercial — 25 ns (military) The CY7B144 and CY7B145 are high­

Contextual Info: CY7B134 CY7B135 CY7B1342 CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional Description • 0.8-micron BiCMOS for high performance • High-speed access — 15 ns commercial — 25 ns (military) • Automatic power-down

Contextual Info: HIGH-SPEED 8K x 9 DUAL-PORT £ V ¡ y IDT7015S/L STATIC RAM Integrated Device Technology, Inc. FEATURES: • • • • • True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location High-speed access — Military: 25/35ns max.

Contextual Info: CY7C132/CY7C136 CY7C142/CY7C146 if CYPRESS 2K x 8 Dual-Port Static RAM Functional D escription Features • 0.8-raicron CMOS for optimum speed/ power • BUSY output flag on CY7C132/ CY7C136; BUSY input on CY7C142/CY7C146 The CY7C132/CY7C136/CY7C142 and CY7C146 are high-speed CMOS 2K by 8

Zl13

Abstract: ZL12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140 C1308 wj 75
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

Contextual Info: PRELIMINARY WCYPRESS: CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features • 4K x 16 organization CY7C024 • 4K x 18 organization (CY7C0241) • 8K x 16 organization (CY7C025) • 8K x 18 organization (CY7C0251)

Contextual Info: PRELIMINARY IDT7054S/L HIGH-SPEED 4K x 8 FourPort STATIC RAM |S a < u ) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed access — Military: 25/35ns max.) — Commercial: 2Q/25/35ns (max.) • Low-power operation — IDT7054S

893Q

Abstract: CY7C131-55JI bit-slice t913 CY7C1312
Contextual Info: fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static Ram Featu res Functional Description • True Dual-Ported memory cells which allow sim ulta­ neous reads of the same memory location • 1K x 8 organization • 0.65-micron CMOS for optimum speed/power

Contextual Info: CY7C027/028 CY7C037/038 32K/64KX 16/18 Dual-Port Static RAM Fully asynchronous operation Automatic power-down Features • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • 32K x 16 organization CY7C027 • 64K x 16 organization (CY7C028)

Contextual Info: fax id: 5012 C Y7 C9 7 0 0 Fast Ethernet Repeater Controller • Repeater loopback m o d e for testing Feat u res 13 Po rt IEEE 8 0 2 .3u co m p lia nt 10 0B A S E -T Repeater Controller • 13 General purpose p ro g r a m m a b le I/O pins — 12 shared network ports

AB2674

Contextual Info: In te g ra te d D e v ic e T e c h n o lo g y , Inc. FEATURES: • Industrial tem perature range - 4 0 ° C to + 85 °C is avail­ able, tested to military electrical specifications • High-speed access — Military: 2 0 /25/3 5/45 n s (m ax.) DESCRIPTION:

Contextual Info: W P CYPRESS PRELIM INARY 2K x 16 Dual-Port Static RAM Features • A vailable in 68-pin PLCC • • Pin com patible and fu nctionally equivalent to IDT7133 and IDT7143 • • • • • • 0.8-m icron C M O S for optim um speed/pow er High speed access: 25 ns