7TB4142 Search Results

IRFS840

Abstract: IRFS841 IRFS842 IRFS843
Contextual Info: SAMSUNG ELECTRONICS INC L.7E » • 7Tb4142 001730^ £k>5 ■ SM6K N-CHANNEL POWER MOSFETS IRFS840/841/842/843 FEATURES • • • • • • • Low er R d s ON Im proved in ductive ru g g ed n es s Fast sw itch in g tim es R ug ged polysilicon g a te cell stru ctu re

Contextual Info: SAMSUNG ELECTRONICS INC 42E ]> B 7Tb4142 G0110Ô5 1 I IS 16 K PRELIMINARY CMOS EEPROM KM29C010 128K/8 Bit CMOS Electrically Erasable PROM FEATURES GENERATION DESCRIPTION • Fast Read Access Time: 120ns • Single 5 Voltage Supply • 128 Byte Page W rite Operation

Contextual Info: SAMSUNG ELECTRONICS INC h ?E KM416C157A ]> • 7Tb4142 0015^21 400 ■■ S M G K CMOS DRAM 256K x1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C157A is a CMOS high speed 262,144 b itx 1 6 Dynamic Random Access Memory. It's

Contextual Info: SAMSUNG SEMICONDUCTOR INC DEE D I 7Tb4142 0 OUt. 155 T 'iü -0 7 Octal D-Type Flip-Flops with Clear KS54AHCT 0 7 0 K S74A H C T^/C * FEATURES DESCRIPTION • Eight positive-edge-triggered D-type flip-flops with single-rail outputs • Buffered common clock and asynchronous clear

d 331 TRANSISTOR equivalent

Abstract: C 3311 transistor la 4142 74143
Contextual Info: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)

Contextual Info: SAMSUNG S E M I CO ND UC TO R INC DE ¡SRttS 6881689 D e J 7Tb4142 □00bE40 t f “ 8-Bit Identity Comparators FEATURES DESCRIPTION • Compares Two 8-BIt Words • Choice of Totem-pole ’688 and open-draln p8'8'9) outputs ('688 is identical to ’521)

z24 mosfet

Abstract: IRF9Z25 IRF9Z20 IRF9Z22 IRF9Z24
Contextual Info: SAMSUNG ELECTRONICS INC b4E D inrv£.¿m¿.¿s IRF9Z20/Z22 • 7Tb4142 DülSSTH 4^5 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • SMGK TO-220 Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

KM428C128

Contextual Info: SAMSUNG ELECTR ONI CS INC bHE D • 7Tb4142 GD13ÖSb ES7 I SMGK PRELIMINARY KM428C128 CMOS VIDEO RAM 12 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance Speed — -Parameter

Contextual Info: SAMSUNG ELECTRONICS INC 7Tb4142 0015445 33T • SNGK b7E D CMOS DRAM KM41C1002C 1,048,576x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002C is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7Tb4142 KM23C4000B G GGlbTflE 70=5 CMOS MASK ROM 4M-Bit (512Kx&f CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using

CS1J

Contextual Info: SAMSUNG SEMICONDUCTOR INC D S3E • 7Tb4142 0000572 KM6865P/KM6865LP 7 CMOS SRAM 8K x 8 Bit Static RAM FEATURE GENERAL DESCRIPTION • Fast Access Time 35,45,55ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 100 pA (max.) Operating : 120 mA (max.)

u212

Abstract: IRFR122 u210 irfr210 U2-12
Contextual Info: tME T> SAMSUNG ELECTRONICS INC m 7Tb4142 GD1233S ñ3ñ « S n G K IR F R 2 1 0/212 IR F U 2 1 0/212 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R q s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: SAMSUNG SEM ICON DUCTOR INC Tfi DEj|7Tb4142 DOOMSOH 0 | KS5806 p CMOS INTEGRATED CIRCUIT TEN NUMBER REPERTORY DIALER WITH PACIFIER TONE The KS5806 is a monolithic integrated ten-number repertory dialer manufactured using CMOS process. Thé circuit accepts keyboard inputs

Contextual Info: SAMSUNG ELECTRONICS 42E INC D 7Tb4142 KMM536200GA DG1QS34 T • SMGK DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • tRA C tC A C tR C KM M 5362000A- 7 70ns 20ns 130ns KM M 5362000A- 8

p 605 transistor

Abstract: p 605 transistor equivalent
Contextual Info: IME 0 SA MS UN G SEMICONDUCTOR INC I 7Tb4142 0007375 1 I PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA76 T-29 -29 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: Vch =50V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

KSR1002

Abstract: KSR2002 74115
Contextual Info: S A M S U N G SEMICONDUCTOR INC mE KSR2002 D 7Tb4142 □ 00706*1 0 | PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION T-37- >3 (Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver circuit • Built In bias Reslstor(R, = 10Kff, R, = 10KÍ1)

C1000B

Abstract: 3020C
Contextual Info: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

SRAM timing

Contextual Info: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran­

KS0787

Abstract: Yl60 LCD 1601 display
Contextual Info: PRELIMINARY CMOS DIGITAL INTEGRATED CIRCUIT KS0787 Introduction KS0787 is a segment driver for dot matrix liquid crystal display system. It consists of 160 LCD drive circuits, and can drive large area dot matrix display. It latchs 4 or 8 bits parallel data from a controller. With the stand-by function, only one driver is operated at the same

pin diagram of 74112

Abstract: ttl 74112 pin diagram of ttl 74112 3B522
Contextual Info: KM684002A CMOS SRAM 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 * (Max.) The KM684002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The

KM68V257CP15

Abstract: KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20
Contextual Info: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CMOS) : 100 |iA (Max.) Operating KM68V257C-15 : 90 mA (Max.)

Opamp Voltage follower

Abstract: XZ 068 c3875 KS0083 KS0103 KS0104
Contextual Info: KS0103 CMOS DIGITAL INTEGRATED CIRCUIT 68 CHANNEL CO M M O N DRIVER FOR DOT M ATRIX LCD 80 QFP The K S 0 1 0 3 is a LCD driver LSI w hich is fabricated by low pow e r CM O S high voltage p ro ce ss tech n olo gy. This device co nsists of 6 8 bit bidirectional shift register, 6 8 bit level shifter and 6 8 bit 4-level

TSOP 2-44

Abstract: km68
Contextual Info: KM68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns m ax. • Low power dissipation - S tandb y(C M O S ) : 180n W (M ax.) L Version : 5 4n W (M ax.) L-L Version -O p era tin g

KS011S

Abstract: samsung p28 6-bit ram-dac video converter amplifier 3HH cga 624 KS0117 WVS 64 256X8 CK27 HN10
Contextual Info: PRELIMINARY KS0119 MULTIMEDIA VIDEO NTSC ENCODER The KS0119 NTSC encoder is a member of the Samsung multimedia chip family. It combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either