KM48C8104B Search Results

31DQ6

Abstract: 31DQ5
Contextual Info: KM48C8004B, KM48C8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref , access time (-45, -5 or -6), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, f?AS-only refresh and Hidden refresh capabilities

KM48C8004B

Abstract: KM48C8104B
Contextual Info: KM48C8004B, KM48C8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

Contextual Info: KM48C8004B, KM48C8104B_ CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 8 ,3 8 8 ,6 0 8 x 8 bit E xte n d e d D a ta O u t M ode C M O S D R A M s. E xte n d e d D a ta O u t M ode o ffe rs high sp e e d random

KM48C8004B

Abstract: KM48C8104B
Contextual Info: KM48C8004B, KM48C8104B CMOS DRAM 8M x 8bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5 or -6), package type (SOJ or TSOPII) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.

4MB DRAM

Abstract: 4MX16 1MX16
Contextual Info: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

Contextual Info: DRAM MODULE KMM372E80 8 3BK/BS KMM372E80(8)3BK/BS EDO Mode 8M x 72 DRAM DIMM with ECC Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372E80(8)3B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372E80(8)3B consists of nine CMOS 8Mx8bits DRAMs

Contextual Info: DRAM MODULE KMM364E80 8 3BK/BS KMM364E80(8)3BK/BS EDO Mode 8M x 64 DRAM DIMM Using 8Mx8, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364E80(8)3B is a 8Mx64bits Dynamic RAM high density memory module. The Samsung KMM364E80(8)3B consists of eight CMOS 8Mx8bits DRAMs

Contextual Info: DRAM M ODULE KMM372E80 8 3BK/BS Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Sept. 1997 DRAM M ODULE KMM372E80(8)3BK/BS Revi si on Hi st or y Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.

k2624

Contextual Info: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#