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    Samsung Electro-Mechanics CL21B106KOYNNWE

    - Tape and Reel (Alt: CL21B106KOYNNWE)
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    Avnet Americas CL21B106KOYNNWE Tape & Reel 20 Weeks 60,000
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    Mouser Electronics CL21B106KOYNNWE
    • 1 $0.52
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    Samsung Electro-Mechanics CL21A226MOYNNWE

    - Tape and Reel (Alt: CL21A226MOYNNWE)
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    Avnet Americas CL21A226MOYNNWE Tape & Reel 30 Weeks 200,000
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    Mouser Electronics CL21A226MOYNNWE
    • 1 $0.74
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    Samsung Electro-Mechanics CL21X226MOYNNWE

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    Avnet Americas CL21X226MOYNNWE Tape & Reel 30 Weeks 200,000
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    Mouser Electronics CL21X226MOYNNWE 90
    • 1 $0.49
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    Avnet Asia CL21X226MOYNNWE 24 Weeks 20,000
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    Samsung Semiconductor & Electro-Mechanics CL21X226MOYNNWE

    Cap Ceramic 22uF 16V X6S 20% Pad SMD 0805 105°C T/R
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    Bristol Electronics CL21X226MOYNNWE 603 1
    • 1 $0.68
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    Samsung Electronics Co. Ltd CL21B106KOYNNWE

    (Alt: CL21B106KOYNNWE)
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    Avnet Abacus CL21B106KOYNNWE 25 Weeks 200,000
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    OYNN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MLG1608A39NJ

    Contextual Info: 6 Inductors Coils Inductors (Coils) Fixed RF-frequency MULTILAYER CHIP INDUCTORS MLG series MLG1608 TYPE FEATURES • High self-resonant frequency. • Multilayer monolithic construction yields high reliability. PRODUCT INDENTIFICATIONS MLG 1608 _A_ 2N2_ S O


    OCR Scan     		mlg1608ave-002mlg1608a39nj PDF

    A10CE

    Abstract: OYNN KM48C2104B km4e KM48V2104B
    Contextual Info: KM48C2004B, KM48C2104B KM48V2004B, KM48V2104B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fa m ily of 2,097,152 x 8 bit Extended Data Out CM OS DRAMs. Extended Data O ut M ode offers high speed random access of m em ory cells w ithin the sam e row, so called H yper Page Mode. Power


    OCR Scan     		km48c2004bkm48c2104bkm48v2004bkm48v2104b+3a10ceoynnkm4e PDF