km416c60j
Abstract: KM416C60
Contextual Info: KM416C60 CMOS DRAM 64Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 65,536 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time 55,60 or 70 power consumption (Normal
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OCR Scan
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KM416C60
64Kx16
KM416C60/L
DQ8-DQ15
D02314b
km416c60j
KM416C60
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KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Contextual Info: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
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OCR Scan
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KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
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KM416C60J
Abstract: KM416C60 km416c60-j JDQ14
Contextual Info: KM416C60 CMOS DRAM 64K x 16 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 65,536 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time 55,60 or 70 power consumption (Normal
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OCR Scan
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KM416C60
64Kx16
KM416C60J
KM416C60
km416c60-j
JDQ14
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1mx1 DRAM DIP
Abstract: KM44V1000C KM41V4000CL
Contextual Info: FUNCTION GUIDE MEMORY ICS DRAM For Reference Org. Density 1M bit pow*«\ Supply jNPPNÍ 1Mx1 5V±10% 256KX 4 5V±10% KM44C2Ö6D# 128Kx8 5V±10% KM48C128# KM41C1ÖOOD# I ' 60/70/80 Fast Page P:18 Pin DIP (1Mx1) 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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OCR Scan
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KM41C1
256Kx4)
00D-L#
256KX
KM44C2
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
1mx1 DRAM DIP
KM44V1000C
KM41V4000CL
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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OCR Scan
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Contextual Info: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
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OCR Scan
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KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
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