KM48V2100B Search Results

km48c2000

Contextual Info: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T h is is a fa m ily o f 2 ,0 9 7 ,1 5 2 x 8 bit F a s t P a g e M o d e C M O S D R A M s. F a st P a g e M o d e o ffe rs h ig h s p e e d

KM48V2100B

Abstract: 2100BK
Contextual Info: KM48V2100BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

00-BK

Contextual Info: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

KM48C2000B

Abstract: KM48C2100B KM48V2000B KM48V2100B V2000B V2100B
Contextual Info: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

KM48V2100B

Contextual Info: KM48V2000BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

DC-361

Contextual Info: KMM372V213BK ELECTRONICS DRAM Module KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Part Identification - KMM372V213BK 2048 cycles/Q2ms, SOJ - KMM372V213BS (2048 cycles/32ms, TSOP) • Fast Page Mode Operation

KMM372V213

Abstract: KMM372V213BS
Contextual Info: KMM372V213BK/BS DRAM MODULE KMM372V213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Part Identification - KMM372V213BK 2048 cycles/32ms, SOJ - KMM372V213BS (2048 cycles/32ms, TSOP) The Sam sung KMM 372V213B is a 2M bit x 72

Contextual Info: K M 4 8 C 2 1 OOBS CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM48C2000B K CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM48C2100BK CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KMM332V203BS-L KMM332V213BS-L DRAM MODULE KMM332V203BS-L / KMM332V213BS-L Fast Page Mode 2Mx32 DRAM DIMM, 2Mx8, Low Power with Self Ref, 4K & 2K Refresh, 3.3V DESCRIPTIO N The Samsung KMM332V20 1 3BS is a 2M bit x 32 Dynamic RAM high density memory module. The

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

Contextual Info: KM48C2000BS CMOS D R A M ELECTRONICS 2M x 8 Bit C M O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily o1 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KMM332V203BS-L KMM332V213BS-L DRAM MODULE KMM332V203BS-L & KMM332V213BS-L with Fast Page Mode 2M x 32 DRAM SODIMM using 2MX8, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 1 3BS is a 2Mx32bits Dynamic Part Identification

km44c2560

Abstract: KM48V2104B-6 KM44C16004A-5
Contextual Info: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8

Contextual Info: DRAM MODULE KMM372V213BK/BS KMM372V213BK/BS with Fast Page Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V213B is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V213B consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II