KM48C2100B Search Results

Contextual Info: KM48C2100BK CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

km48c2000

Contextual Info: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T h is is a fa m ily o f 2 ,0 9 7 ,1 5 2 x 8 bit F a s t P a g e M o d e C M O S D R A M s. F a st P a g e M o d e o ffe rs h ig h s p e e d

00-BK

Contextual Info: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

KM48C2000B

Abstract: KM48C2100B KM48V2000B KM48V2100B V2000B V2100B
Contextual Info: KM48C2000B, KM48C2100B KM48V2000B, KM48V2100B CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5,-6 or -7), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

VG264265B

Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
Contextual Info: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D

KM48V2100B

Contextual Info: KM48V2000BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: DRAM MODULE KMM372C213BK/BS KMM372C213BK/BS with Fast Page Mode 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C213B is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C213B consists of nine CMOS 2Mx8bits DRAMs in SOJ/TSOP-II

Contextual Info: KMM372C213BK/BS DRAM MODULE KMM372C213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Samsung KMM372C213B is a 2M bit x 72 • Part Identification - KMM372C213BK 2048 cycles/32ms, SOJ Dynamic RAM high density memory module. The

Contextual Info: K M 4 8 C 2 1 OOBS CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM48C2000B K CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

KM48V2104B

Abstract: KM48C2104B
Contextual Info: FUNCTION GUIDE MEMORY ICs Density 16M bit Org. 4Mx4 Power Supply Port Number, 3.3V+0.3V KM44V4104B# features ' * w » 60/70/80 EDO 2K 50/60/70 Fast Page{4K) KM44V4104BL# 16M B/W 2Mx8 5V±10% KM48C2000B# Packages ' : K.-24 Pin S 0j(300m il) S.-24 Pin TSOP-ll(300mil)

KM48V2100B

Abstract: 2100BK
Contextual Info: KM48V2100BK CMOS DRAM ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

1004CL

Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Contextual Info: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-&#39; -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7

KM48C2100

Contextual Info: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS with Fast Page Mode 2M x 64 DRAM DIMM using 2Mx8, 2K Refresh , 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C213B is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C213B consists of eight CMOS 2Mx8bits DRAMs in SOJ/TSOP-II

KM48V2100B

Contextual Info: KM48V2000BS CMOS DRAM ELECTRONICS 2M x 8 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: DRAM MODULE KMM372C213BK/BS KMM372C213BK/BS Fast Page Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 5V G ENER AL DESCRIPTIO N FEATURES The Samsung KMM372C213B is a 2M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C213B consists of nine CMOS

Contextual Info: KM48C2000BS CMOS D R A M ELECTRONICS 2M x 8 Bit C M O S Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily o1 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

KM416C60-7

Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Contextual Info: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55

km44c2560

Abstract: KM48V2104B-6 KM44C16004A-5
Contextual Info: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8

Contextual Info: DRAM MODULE KMM364C213BK/BS KMM364C213BK/BS Fast Page Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V FEATURES GENERAL DESCRIPTION The Sam sung KM M 364C213B is a 2M bit x 64 • Part Identification D ynam ic RAM high density m em ory module. The - KMM364C213BK 2048 cycles/32ms Ref, 30 0m il SOJ

Contextual Info: PRELIMINARY KM48C2100 CMOS DRAM 2 M x 8 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM48C2100 is a CMOS high speed 2,097,152 b it x 8 D ynam ic Random A ccess M em ory. Its de sig n is op tim ized fo r high perform ance a p p lica tio n s

Contextual Info: KMM5322100BKU DRAM Module ELECTRONICS KMM53221OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM FEATURES GENERAL DESCRIPTION • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 - KMM5322100BKU 2048 cycles/32 ms Ref, SOJ, Solder