KM44V16004B Search Results

Contextual Info: KM44V16004B, KM44V16104B CMOS DRAM 1 6 M x4b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 iait Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal

3125uS

Contextual Info: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal

44v16104

Contextual Info: KM44V16004B, KM44V16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consum ption(Norm al

km44v161

Contextual Info: KM44V16004B, KM44V16104B CMOS DRAM 16M x 4bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 16,777,216 x 4 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), power consumption(Normal

Contextual Info: DRAM MODULE KMM372F320 8 0BS1 KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits

4MB DRAM

Abstract: 4MX16 1MX16
Contextual Info: TABLE OF CONTENTS I. GENERAL INFORMATION 1. Introduction . 11 2. Product Guide . 17 3. Ordering information . .

KMM372F3200BS1

Abstract: KMM372F3280BS1 KM44V16104
Contextual Info: KMM372F320 8 0BS1 DRAM MODULE KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits

KMM372F1600BK

Abstract: KMM372F1600BS KMM372F1680BK KMM372F1680BS MIC29750-5.0BK
Contextual Info: KMM372F160 8 0BK/BS DRAM MODULE KMM372F160(8)0BK/BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FEATURES GENERAL DESCRIPTION The Samsung KMM372F160(8)0B is a 16Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F160(8)0B consists of eighteen CMOS 16Mx4bits

KM44C4105C-6

Abstract: KM44C16004
Contextual Info: General Information CMOS DRAM 1. introduction 4Mbit 4Mx1 KM41C4000D-5 - KM41C4000D-6 - KM41C4000D-7 KM41C4000D-L5 1Mx4 KM41C4000D-L6 KM41C4000D-L7 KM41V4000D-6 KM41V4000D-7 KM41V4000D-L6 KM41V4000D-L7 KM44C1000D-5 - KM44C1000D-6 - KM44C1000D-7 KM44C1000D-L5 - KM44C1000D-L6 - KM44C1000D-L7

Contextual Info: DRAM MODULE KMM366F160 8 0BK3 Revision History Version 0.0(Nov. 1997) • Changed PCB for signal integrity. • Changed Module Part No. from KMM366F160(8)0BK to KMM366F160(8)0BK3 caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM366F160(8)0BK3

kmm372f3200bk4

Contextual Info: KMM372F320 8 0BK4 DRAM MODULE KMM372F320(8)0BK4 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0BK4 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0BK4 consists of thirty-six CMOS 16Mx4bits

KMM372F3200BS1

Abstract: KMM372F3280BS1
Contextual Info: KMM372F320 8 0BS1 DRAM MODULE KMM372F320(8)0BS1 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B1 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B1 consists of thirty-six CMOS 16Mx4bits

Contextual Info: KMM374F160 8 0BK3 DRAM MODULE Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS. KMM374F160(8)0BK3 DRAM MODULE KMM374F160(8)0BK3 EDO Mode without buffer

80BK1

Contextual Info: KMM374F160 8 0BK1 DRAM MODULE KMM374F160(8)0BK1 EDO Mode without buffer 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F160(8)0BK1 is a 16Mx72bits Dynamic RAM high density memory module. The Samsung

KMM372F3280BS1

Abstract: KMM372F3200BS1
Contextual Info: KMM372F320 8 0BS1 DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -0.5 to +4.6

Contextual Info: KM M 3 7 2 F 1 60 8 0B K/B S DRAM M ODULE KM M 372F1 60(8) 0BK/ BS EDO Mode 16M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V FE A TU R ES G E N E R A L DE SCRIPTION The Samsung KMM372F160(8)0B is a 16Mx72bits Dynamic RAM high density memory module.

TAA 151

Contextual Info: DRAM MODULE KMM366F160 8 0BK2 KMM366F160(8)0BK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0BK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0BK2 consists of sixteen CMOS 16Mx4bits

KMM372F3200BK3

Abstract: KMM372F3280BK3
Contextual Info: KMM372F320 8 0BK3 DRAM MODULE KMM372F320(8)0BK3 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B consists of thirty-six CMOS 16Mx4bits

KMM372F3200BK3

Abstract: KMM372F3280BK3
Contextual Info: KMM372F320 8 0BK3 DRAM MODULE KMM372F320(8)0BK3 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0B is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0B consists of thirty-six CMOS 16Mx4bits

BS 050 transistor

Contextual Info: KMM374F160 8 0BK/BS DRAM MODULE Unbuffered 16Mx72 DIMM (16Mx4 base) Revision 0.0 Dec. 1997 DRAM MODULE KMM374F160(8)0BK/BS Revision History Version 0.0 (Dec, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS.

KM44V16104BK

Contextual Info: DRAM MODULE KMM366F160 8 0BK2 KMM366F160(8)0BK2 EDO Mode without buffer 16M x 64 DRAM DIMM Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F160(8)0BK2 is a 16Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F160(8)0BK2 consists of sixteen CMOS 16Mx4bits

k2624

Contextual Info: General Information CMOS DRAM 2. Product Guide Density Org. Power Supply 4Mbit 4Mx1 +5V±10% Part Number KM41C4000D# Spe«d ns 50/60/70 KM41 C4000D#-L +3.3V±0.3V KM41V4000D# 60/70 +5V±10% +3.3V±0.3V KM44C1000D# FP, LP KM44C1003D# Quad CÄS FP KM44C1004D#

Contextual Info: KMM372F320 8 0BK4 DRAM MODULE KMM372F320(8)0BK4 EDO Mode 32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F320(8)0BK4 is a 32Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F320(8)0BK4 consists of thirty-six CMOS 16Mx4bits

Contextual Info: DRAM MODULE KMM374F160 8 0BK/BS Revision History Version 0.0 (Dec, 1997) • Removed two AC parameters t CACP (access time from CAS) and t AAP (access time from col. addr.) in AC CHARACTERISTICS. • Changed Module part number from KMM374F160(8)0AK/AS to KMM374F160(8)0BK/BS caused by component revision.