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    KM416C256-7

    Contextual Info: PRELIMINARY CMOS DRAM KM416C256 2 5 6 K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 6 C 2 5 6 is a C M OS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random A ccess M emory. Its design is optimized for high perform ance applications


    OCR Scan     		km416c256130ns180ns40-lead+1km416c256-7 PDF

    416C256J

    Abstract: 416c
    Contextual Info: PRELIMINARY KM416C256 CMOS DRAM 2 5 6 K X 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 6 C 2 5 6 is a CMOS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random A ccess Memory. Its design is optimized for high performance applications


    OCR Scan     		km416c2566c256j416c256j416c PDF

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


    OCR Scan     		km4164bpkm41c256pkm41c256jkm41c256z+14km41c257pkm41c257jkm41c257zkm41c258pkm41c258jkm41c258zkm41c1000bjkm44c256bpkm41c1000bpkm41c1001bpkm44c256bjkm4164km44c1000ljkm41c464z PDF