KM68V512A Search Results

KM68V512ALTE-10L

Abstract: 64Kx8 CMOS RAM KM68U512ALE-L
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V

KM68U512ALE-L

Abstract: KM68V512ALTE-10L KM68V512ALE-L 85FV 32-STSOP
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6pm CMOS • Organization : 64Kx8 • Power Supply Voltage KM60V512A family : 3.3VKJ.3V KM68U512A family : 3.0V±0.3V

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17th 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.

A2ND

Abstract: KM68U512ALE-L KM68V512A
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage The KM68V512A and KM68U512A family are fabricated by SAMSUNG'S advanced CMOS process

A2ND

Abstract: KM68U512 SRAM 64KX8 5V KM68U512ALE-L KM68U512ALG-10L 00E3b
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A fam ily: 3.3V +/- 0.3V KM68U512A fam ily: 3.0V +/- 0.3V

2TZ21

Abstract: 0820F C2733
Contextual Info: Advance KM68V512B, KM68U512B Family CMOS SRAM 64Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 j/n CMOS • Organization: 64Kx8 • Power Supply Voltage KM68V512A fam ily: 3.3V±0.3V KM68U512A fam ily: 3,0V±0,3V

004II

Abstract: a1215 KM68U512ALE-L KM68U512ALTGE-8L
Contextual Info: KM68V512A, KM68U512A Family_ CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64 K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V

KM736V789T-60

Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
Contextual Info: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L

"30 pin simm"

Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36

package tsop1

Abstract: 64Kx8 CMOS RAM K6T0908U2B K6T0908V2B
Contextual Info: K6T0908V2B, K6T0908U2B Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 1.0 History Draft Data Remark Design target November 25, 1997 Advance Finalize August 27, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

64Kx8 CMOS RAM

Abstract: package tsop1 KM68U512BL-L KM68U512B KM68V512B 64Kx8 bit Low Power CMOS Static RAM KM68V512BLT-10L
Contextual Info: KM68V512B, KM68U512B Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 1.0 History Draft Data Remark Design target November 25, 1997 Advance Finalize August 27, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

TSOP 87

Contextual Info: K6L0908V2A, K6L0908U2A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.

KM736V789-60

Abstract: 512k*8 sram KM68U4000A
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -

KM616U1000BL-L

Abstract: KM68U512ALE-L
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. Low Power SRAM Low Vcc Operation Density 256K Org. & Op Vcc 32K X 8 KM62V256CL-L (Vcc=3.0~3.6V) 32Kx8 (Vcc=2.7~3.3V) 512K 6 4K X 8 (Vcc=3.0~3.6V) 64KX8 (Vcc=2.7~3.3V) 1M Product No’ 128KX8 (Vcc=3.0~3.6V) Speed 70/100 30/10

KM616U1000BL-L

Contextual Info: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI

KM68512

Abstract: 12BKX8 km6865b
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs

64Kx8 CMOS RAM

Abstract: package tsop1 KM68U512B KM68V512B KM68U512BLTGI-8L
Contextual Info: Advance CMOS SRAM KM68V512B, KM68U512B Family Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark Design target November 25, 1997 Advance The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 — MB81257 — S. Column KM41C258 TC51258

KM68U512ALE-L

Contextual Info: K M6 8 V 5 1 2A, K M 6 8 U 5 1 2 A Fami l y CMOS SRAM Document liti 6 4 K x 8 bit L o w P o w e r and L o w V o l t a g e C M O S Static R A M Revision History R evisio n N o . H is to ry D ra ft D ata Rem ark 0.0 Design target January 17th 1996 Advance