2SC1657 Search Results

2SC1657 Datasheets (5)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC1657		Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	43.62KB	1
2SC1657		Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	107.97KB	2
2SC1657		Unknown	Transistor Substitution Data Book 1993	Scan	PDF	33.34KB	1
2SC1657		Unknown	The Japanese Transistor Manual 1981	Scan	PDF	112.45KB	2
2SC1657		Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.63KB	1

2SC1657 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UPA75HA Abstract: 2SC2602 2SC2611B 2SC2650 2SC2601 2sc2335 2SC2534 2SC2625 upa75 2SC3082K Contextual Info: - 142 - £ m € a T yp e No. «5 T 2SC 2591 « 2SC 2592 M anuf. T 2SC 2595 «i T 2SC 2596 T i* = SANYO 3K *£ TO SH IBA h 2SC 2605 w 2SC 2SC 2SC r 2SC1657 /' i B B 2SC 2620 ✓ im 2SC 2621 / ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL ÍL •ti 2SC 2618 A 2SC2634	OCR Scan	2sc2591 2sc2592 2sc2595 2sc2596 +142sc2597 2sc2598 2sc2599 2sc2600 2sc2601 2sc2602 upa75ha 2sc2611b 2sc2650 2sc2335 2sc2534 2sc2625 upa75 2sc3082k	PDF
Contextual Info: 2SC1657 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)16 I(C) Max. (A)30m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)	Original	2sc1657	PDF
2SC144 Abstract: 2SC2240 2SC1684 2SC1919 2sc1855 2sc763 2SC2839 2sc945 2SC1047 2SC1775A Contextual Info: - 126 - m € T y p e No. Manuf. SANYO 3í 2 T O SHIBA B NEC B HITACHI ti S i l F U J ITSU ta t MATSUSHITA m ' h MITSUBISHI □ - A ROHM 2SC 1898 Ü3 r B $ f 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC 1899 SrBÍS 2SC2839 2SC1393 2SC1855 2SC1047 2SC1809 2SC1845	OCR Scan	2sc2839 2sc1393 2sc1s55 2sc1047 +102sc180s 2sc1855 2sc1809 2sc144 2sc2240 2sc1684 2sc1919 2sc763 2sc945 2sc1775a	PDF
2SC1730 Abstract: 2SC1688 2SC1740A 2SC1673 2SA933LN 045PG 2SC1708 2SC1661 2SC1654 2SC1655 Contextual Info: - 108 - Ta=25sC, EPÎïTc=25‘ C ± 2SC1653 2SC1654 £ BM BM BW. m 1% VcBO Vc e o Ic(DC) Pc (V) (V) (A) (W) Pci (W) fs. m hF E I.CBO, (max) V'c b (V) (Uh) (min) (Ta-25T!) w t ( (max) ic/ÎE (A) VCE (V) [*EPiÎtyp{g] VcE(sat <,max) (V) (V) le (A) 1e (A)	OCR Scan	2sc1653 2sc1654 2sc1655 2sc1655a +142sc1656 2sc1657 2sc1658 102c2c1b1e1 2sc1731 2sc1732 2sc1730 2sc1688 2sc1740a 2sc1673 2sa933ln 045pg 2sc1708 2sc1661	PDF
2sc1695 Abstract: 2SC1694 2SC1693 2sc1696 2sc1700 2sa835 2sc1611 2SC1699 2SC1648 2SC1616 Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) DC Current Gain VCBO VEBO Ic Pc Tj fab/ft* Cob hFE PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SC1601 35 100 200 175 150 6 1 200* 2 2SC1602 35 100 150 125	Original	2sc1601 2sc1602 2sc1603 2sc1604 +162sc1605 2sc1605a 2sc1606 2sc1607 2sc1608 2sc1609 2sc1695 2sc1694 2sc1693 2sc1696 2sc1700 2sa835 2sc1611 2sc1699 2sc1648 2sc1616	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500ma 240mwf y51 h 120c bd124 +8kt368 bfq59 silec semiconductors bd214 al103 afy18 bd192 mm1711	PDF
PA63H Abstract: 2sc603 TRANSISTOR 2SC603 uPA15A PA54H PA60A UPA63H PA36A 2SC1733 UPA61A Contextual Info: ü »II r, T ype No. Um ^PA 15A m m * n * P A 33A + s ? '< , £ J 5 tt» 6 3 3 . /<PA34A + J7 » . If PA36A £ N P N Dual T ra n s la to r 4 > e -r> X S ; (P - c h Dual M OS FET' (N -ch Dual M OS F E T ) f » 7 '< (N PN Dual T r a n s is to r ) « JM U E JM B	OCR Scan	upa15a upa33a upa34a pa36a +11pa38a ipa47 pa53c pa54h pa63h 2sc603 transistor 2sc603 pa60a upa63h 2sc1733 upa61a	PDF