2SD968A Search Results

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm 4.5±0.1 Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C

2SB789A

Abstract: 2SB789 2SD968 2SD968A marking symbol ER transistor IC 4020
Contextual Info: Transistor 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD968 and 2SD968A Unit: mm Parameter Symbol Collector to 2SB789 base voltage 2SB789A Collector to 2SB789 Ratings –100 VCBO –120 –100

Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 Rating Unit VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A IC

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A IC 2003
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 For low-frequency driver amplification Complementary to 2SB0789A (2SB789A) 1.6±0.2 1 3 2 0.5±0.08 0.4±0.08

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SB0789, 2SB0789A 2SB789, 2SB789A Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SD0968 (2SD968) and 2SD0968A (2SD968A) Unit: mm Parameter Symbol Collector to 2SB0789 base voltage 2SB0789A Collector to

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A
Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1.5±0.1 Rating Unit VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1 A IC

WQ marking

Abstract: 2SD968 2SD968A
Contextual Info: Transistors SMD Type Silicon NPN epitaxial planer type 2SD968, 2SD968A Features High collector to emitter voltage VCEO. Large collector power dissipation PC. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 1 3 2 0.5±0.08 0.4±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain sc te on na tin nc

2SB789

Abstract: 2SB789A 2SD968 2SD968A
Contextual Info: Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB789 and 2SB789A Unit: mm 0.5±0.08 1.5±0.1 • Absolute Maximum Ratings Parameter Collector to 2SD968 base voltage 2SD968A Collector to

2SB789A

Abstract: 2SB0789A 2SD0968A 2SD968A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 3 2 0.5±0.08 1.5±0.1 3˚ 1 0.4±0.08 0.4±0.04 4.0+0.25 –0.20 • Absolute Maximum Ratings Ta = 25°C

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A
Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C 0.4 max. 3˚ 2.6±0.1 • High collector-emitter voltage (Base open) VCEO

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm • Absolute Maximum Ratings Parameter 2SD0968 base voltage 2SD0968A Collector to

2sd0968

Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 Collector to base voltage 2SD0968A Collector to

Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) Unit: mm Parameter Collector to base voltage 2SD0968A Collector to 2SD0968 100

2SB0789

Abstract: 2SB0789A 2SB789 2SB789A 2SD0968 2SD0968A 2SD968 2SD968A
Contextual Info: Transistor 2SD0968, 2SD0968A 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB0789 (2SB789) and 2SB0789A (2SB789A) M Di ain sc te on na tin nc ue e/ d Unit: mm 4.5±0.1 Parameter Collector to base voltage

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0968A (2SD968A) Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.5±0.1 4.0+0.25 –0.20 M Di ain sc te on na tin nc ue e/ d 1.6±0.2 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1

2SB0789A

Abstract: 2SB789A 2SD0968A 2SD968A
Contextual Info: Transistors 2SD0968A 2SD968A Silicon NPN epitaxial planar type Unit: mm 4.5±0.1 1.6±0.2 4.0+0.25 –0.20 1.5±0.1 3 2 0.5±0.08 1.5±0.1 1.0+0.1 –0.2 1 0.4±0.08 0.4±0.04 • Absolute Maximum Ratings Ta = 25°C 0.4 max. 3˚ 2.6±0.1 • High collector-emitter voltage (Base open) VCEO

NEC k 3654

Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
Contextual Info: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6

616A TRANSISTOR

Abstract: 2sD586A 2SD736A transistor 669A transistor 669A 649A 2SD674A 2SD738 2Sd824A 2SD877 616a
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

500w power amplifier circuit diagram

Abstract: 500w audio amplifier circuit diagram schematic diagram inverter 500w USING MOSFET 500w audio amplifier circuit diagram layout down Audio Power Amplifier MOSFET TOSHIBA schematic diagram PWM inverter 500w schematic PWM inverter 500w C18 ph zener 100w audio amplifier circuit diagram class D 350w power amplifier stereo
Contextual Info: REFERENCE DESIGN IRAUDAMP1 revB International Rectifier • 233 Kansas Street, El Segundo, CA 90245 z USA High Power Class D Audio Power Amplifier using IR2011S IRAUDAMP1 revB High Power Class D Audio Power Amplifier using IR2011S Features - Complete Analog Input Class D Audio Power Amplifier

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A