2SA119 Search Results

2SA1195

Abstract: 2SC2483
Contextual Info: JMnic Product Specification 2SA1195 Silicon PNP Power Transistors DESCRIPTION ・With TO-202 package ・High power dissipation ・Complement to type 2SC2483 APPLICATIONS ・For high voltage and general purpose amplification PINNING see Fig.2 PIN DESCRIPTION

Hitachi DSA00276

Contextual Info: 2SA1194 K Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO –60 V Collector to emitter voltage

Contextual Info: 2SD1209 K Silicon NPN Epitaxial, Darlington REJ03G0783-0200 (Previous ADE-208-1143) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)

2SA1194

Abstract: Hitachi DSA00396
Contextual Info: 2SA1194 K Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1 1. Emitter 2. Collector 3. Base 2 3 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO –60 V Collector to emitter voltage

2SA1191

Abstract: 2SA1190 2SC2855 2SC2856 Hitachi DSA00493
Contextual Info: 2SA1190, 2SA1191 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC2855 and 2SC2856 Outline 2SA1190, 2SA1191 Absolute Maximum Ratings Ta = 25°C Item Symbol 2SA1190 2SA1191 Unit Collector to base voltage

2SA1193

Abstract: 2SA1193KTZ-E PRSS0003DC-A
Contextual Info: 2SA1193 K Silicon PNP Epitaxial, Darlington REJ03G0641-0200 (Previous ADE-208-1013) Rev.2.00 Aug.10.2005 Application High gain amplifier Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 2 1. Emitter 2. Collector 3. Base 3 1 3 2 1 Absolute Maximum Ratings

2SA1199

Contextual Info: h ~7> y $ /T ra n s is to rs 2SA1199 2SA1199S 2SA 1199/ 2SA 1199S X > ' i; □ > h =7 > ¿ ¿ X ? & * -f -y / Medium Power Amp. & Switching Epitaxial Planar PNP Silicon Transistors • i't-Jfi \f;i[2 l/D im e n s io n s Unit : mm 1 ) V C E (s a t) V c e ( s a t)

2sa11

Contextual Info: h ~7y y 7 $ /T ra n s is to rs 2SA 119 9 /2 S A 1 199S 2SA1199 2SA1199S 7’ JU-Jls-J-BPNP S ÿ > y 7,$ Epitaxial Planar PNP Silicon Transistors & 7 'f y ? y y^ffl/Medium Power Amp. & Switching • H i f i T fä E l/'D im e n s io n s U nit : mm 1) VcE(sat) &&

2SA1195

Abstract: 2SC2483
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1195 Silicon PNP P o w er Transistors DESCRIPTIO N • W ith T O -202 package • High power d issipation • C om plem ent to type 2S C 2483 m •< A P P LIC A TIO N S • For high vo lta g e and general purpose am plification

2SC2483

Abstract: 2SA1195 500ma 40v pnp
Contextual Info: Inchange Semiconductor Product Specification 2SA1195 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·High power dissipation ·Complement to type 2SC2483 APPLICATIONS ·For high voltage and general purpose amplification PINNING see Fig.2

Hitachi DSA002756

Contextual Info: 2SD1209 K Silicon NPN Epitaxial, Darlington Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SD120

Abstract: Hitachi DSA0076 2SA1193 2SD1209 2SA11
Contextual Info: 2SD1209 K Silicon NPN Epitaxial, Darlington ADE-208-1143 (Z) 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1209(K) Absolute Maximum Ratings (Ta = 25°C)

TM 1628 IC

Abstract: IC TM 1628 Datasheet TM 1628 Datasheet 2SA1190 TM 1628 IC data sheet 2SA1191 2SC2855 2SC2856 DSA003637
Contextual Info: 2SC2855, 2SC2856 Silicon NPN Epitaxial ADE-208-1079 Z 1st. Edition Mar. 2001 Application • Low frequency low noise amplifier • Complementary pair with 2SA1190 and 2SA1191 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2855, 2SC2856 Absolute Maximum Ratings (Ta = 25°C)

2SC2483

Abstract: 2SA1195
Contextual Info: SavantIC Semiconductor Product Specification 2SA1195 Silicon PNP Power Transistors DESCRIPTION •With TO-202 package ·High power dissipation ·Complement to type 2SC2483 APPLICATIONS ·For high voltage and general purpose amplification PINNING see Fig.2

Contextual Info: 2SA1194 K Silicon PNP Epitaxial HITACHI Application High gain amplifier Outline TO- 126 MOD 2 Q 1. Emitter 2. Collector 3. Base ^ f 1 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating Unit Collector to base voltage ^C B O -6 0 V Collector to em itter voltage

2SA1198

Contextual Info: 2SA1198/ 2SA1198S h ~p > V X $ / I ransistors 2SA1198 2SA1198S x £ e $ * ' > 7 ? J l ' 7 ° l s — t B P N P v U = i > h 7 > y ^ ^ r^iÎJŒ £Ei^lfiffl/H ig h Voltage Amp. Epitaxial Planar PNP Silicon Transistors • í'l-Jfí'ífjilil/D im en sio ns Unit : mm

Contextual Info: i HITACHI 2SA1194 g SILICON PNP EPITAXIAL HIGH GAIN AM PLIFIER 9- ä. îjrmtier 2. C i ’»1kc-K*r V ÏW mnwn> (JE D E C TO-126 MOD.) • A B SO LU T E MAXIMUM RATIN G S <T»«25’C) MAXIMUM CO LLECTO R DISSIPATION >SAII94fÇ. Unit Vcbo -60 V Collector to emitter voltale | V cf'o

Contextual Info: 2SA1190 Silicon PNP Epitaxial REJ03G0640-0200 Previous ADE-208-1012 Rev.2.00 Aug.10.2005 Application • Low frequency low noise amplifier • Complementary pair with 2SC2855 and 2SC2856 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1)

Contextual Info: üb TOSHIBA {DISCRETE/OPTO} dFJìd'ìtesg DDovat.11] □ f ~ «y 9097250 TOSHIBA 5òC DISCRETE/OPTO 07269 2SA1195 SILICON PNP EPITA X IA L TYPE (PCT PROCESS) HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. Unit in mm COLOR TV CLASS B SOUND OUTPUT APPLICATIONS.

t3f2

Abstract: 2sa 5200 power amp 2sa119 2SA1199 2SA1199S A1199S a1199 3715
Contextual Info: ROHM CO LT» Md E * D E3 T Ö S fl'm 000S4SS H IR H fl 2SA1199/2SA1199S / T ransistors " 2 2 S + a 7 ^ 3 7 -/£ " h = 7 > i> 7 ,9 > & X - f *y -?1 > Medium Power Amp. & Switching Epitaxial Planar PNP Silicon Transistors v r> jv n v u i-i- • £t3fi\|'j£|3i]/'D im ensions Unit : mm

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

2SA1194

Abstract: Hitachi DSA002788
Contextual Info: 2SA1194 K Silicon PNP Epitaxial Application High gain amplifier Outline Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –7 V Collector current

Hitachi 2SA

Abstract: Hitachi DSA002754
Contextual Info: 2SA1193 K Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline 2SA1193(K) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage

Contextual Info: 2SA1194 K Silicon PNP Epitaxial HITACHI Application High gain amplifier Outline TO -126 MOD 2 Q 1. Emitter 2. Collector 3. Base ^ - T 1 Absolute Maximum Ratings ( T a = 25 °C ) Item Symbol Rating Unit Collector to base voltage ^GBO -6 0 V Collector to em itter voltage