2SD120 Search Results

2SB892

Contextual Info: 2SB892 / 2SD1207 Ordering number : EN930D SANYO Semiconductors DATA SHEET 2SB892 / 2SD1207 PNP / NPN Epitaxial Planar Silicon Transistors Large-Current Switching Applications Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

2SB892

Abstract: 2SD1207 930C
Contextual Info: Ordering number:930C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB892/2SD1207 Large-Current Switching Applications Features Package Dimensions • Power supplies, relay drivers, lamp drivers, and automotive wiring. unit:mm 2006A [2SB892/2SD1207]

2SD1208

Contextual Info: SavantIC Semiconductor Product Specification 2SD1208 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·High DC current gain ·Darlington APPLICATIONS ·Power regulator for line operated TV PINNING PIN DESCRIPTION

2SC1565

Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
Contextual Info: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207

Contextual Info: K -7 > v X $ / 7 ransistors 2SD1200 yU =i> h ? > y Z $ i Freq. Power Amp. & Epitaxial Planar NPN Silicon Transistor • W B vH iH I/D im en sion s U n it: mm *e*t 5>o 2) VCEO=80V t M B /± T * 3 „ 3) 2 S B 8 8 9 t = l > 7 ,' U T ' * 5 o • Features 1) The rear surface of this device is

2SB892

Abstract: 2SD1207 ITR08646 ITR08647 ITR08648
Contextual Info: Ordering number:ENN930C PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SB892/2SD1207 Large-Current Switching Applications Features Package Dimensions • Power supplies, relay drivers, lamp drivers, and automotive wiring. unit:mm 2006B [2SB892/2SD1207]

Contextual Info: 2SD1209 K Silicon NPN Epitaxial, Darlington REJ03G0783-0200 (Previous ADE-208-1143) Rev.2.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod)

2SD1205

Abstract: 2SD1205A
Contextual Info: Transistors 2SD1205, 2SD1205A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 2.5±0.1 Collector-base voltage Emitter open 2SD1205 30 V 3 60 2 (2.5) Collector-emitter voltage 2SD1205 (Base open) 2SD1205A VCEO Emitter-base voltage (Collector open)

Contextual Info: 2SD1209 K Silicon NPN Epitaxial, Darlington HITACHI Application • Low frequency power amplifier • Complementary pair with 2SA 1193(K) Outline TO-92MOD 2 9 3 1. Emitter 2. Collector 3. Base o- Ô 904 2SD1209(K) Absolute Maximum Ratings (Ta = 25°C) Item

Contextual Info: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278

Hitachi DSA002756

Contextual Info: 2SD1209 K Silicon NPN Epitaxial, Darlington Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage

2SD120

Abstract: Hitachi DSA0076 2SA1193 2SD1209 2SA11
Contextual Info: 2SD1209 K Silicon NPN Epitaxial, Darlington ADE-208-1143 (Z) 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SA1193(K) Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1209(K) Absolute Maximum Ratings (Ta = 25°C)

2sd1205

Contextual Info: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 2.5±0.1 6.9±0.1 Parameter 1.0 0.45±0.05 2SD1205 base voltage 2SD1205A Collector to 2SD1205 emitter voltage 2SD1205A Ratings VEBO Peak collector current

2SB892

Abstract: D1207 sd1207 2SC1207 D1207 t 2SC 1207 2sd1207 2S3392 2sb89 2SB392
Contextual Info: Ordering number: EN 930C 2SB892/2SD1207 N0.93OC PNP/ NPN Epitaxial Planar Silicon Transistors SAXYO i Large-Current Switching Applications APPLICATIONS • Power supplies, relay drivers, lamp drivers, and automotive wiring FEATURES • FBET and MBIT processed Original process of SANYO

2SD1659

Abstract: 2SB689F 2sb123b
Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)

Contextual Info: 2SB892 / 2SD1207 Ordering number : EN930D SANYO Semiconductors DATA SHEET 2SB892 / 2SD1207 PNP / NPN Epitaxial Planar Silicon Transistors Large-Current Switching Applications Applications • Power supplies, relay drivers, lamp drivers, and automotive wiring.

3CK2A

Contextual Info: "5t TOSHIBA {DIS CR ETE/ OP TO} 9097250 TOSHIBA CD I S C R E T E / O P T O 2SD1208 QD07ññ7 3 56C 0?887 D T “ 3 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS) POWER REGULATOR FOR LINE OPERATED TV. Unit in nun « 02&OMAX. FEATURES : 01.0 MAX . Excellent Wide Safe Operating Area (lOOW.Sec at Tc=25°C

2SD1205

Abstract: 2SD1205A
Contextual Info: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9±0.1 1.5 1.0 4.5±0.1 7 0. R 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE

2SD1205

Abstract: 2SD1205A driver transistor hfe 60
Contextual Info: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 6.9±0.1 1.5 1.0 4.5±0.1 7 0. R 0.85 4.1±0.2 ● 2.4±0.2 2.0±0.2 3.5±0.1 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer bammer: hFE

2SC5248

Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
Contextual Info: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F

2SD1205

Abstract: 2SD1205A 2SD120
Contextual Info: Transistors 2SD1205, 2SD1205A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 2.5±0.1 1.0 2SD1205 Collector-base voltage (Emitter open) 0.55±0.1 Rating Unit 30 V VCBO 2SD1205A 3 60 2 (2.5) Collector-emitter voltage 2SD1205

2SD1203

Contextual Info: 2SD1203 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400è V(BR)CBO (V)500 I(C) Max. (A)15 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SD1205

Abstract: 2SD1205A
Contextual Info: Transistors 2SD1205, 2SD1205A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 2.5±0.1 1.0 (1.0) (1.5) R 0.9 2.4±0.2 1.0±0.1 (0.85) • Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open) Rating

Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)