2SB1238 Search Results

2Sb1238

Abstract: 2SB1189 2SD1767 2SD1859 T100 ic T100 bd marking code transistor ROHM
Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5

Contextual Info: h ~p > y X $ / I ransistors 2 S B 9 1 O M 3 8 2 2SB910M/2SB1238 v = r > 's 7 ,j? ^p'tax'a* Planar PNP Silicon Transistors i ’^ ^ J ii'llffl/M e d iu m Power Amp. • 1 Pc = 1 W 0 /D im e n s io n s U n it: mm) t * it 'o 2 )S W IE , VCeo = - 80V, lc = - 0 . 7 A

Contextual Info: Transistors 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F 96-618-B13 (96-750-D13) 278

2SD1659

Abstract: 2SB689F 2sb123b
Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors I Medium Power Transistor —80V, —0.7A 2 S B 1 189 / 2 S B 1 238 / 2 S B 8 8 9 F •F e a tu re s • A b s o lu t e m axim um ratings (T a = 2 5 'C ) 1 ) High breakdown voltage and high current. (—80V, - 0.7A)

transistor 2sb1238

Abstract: 2sb1238
Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5

2SD1859

Abstract: 2SB1189 2SB1238 2SD1767 T100 sc621
Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

2SD1859

Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

2SD1859

Abstract: 2SD1767 2SB1189 2SB1238 T100
Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

2sd1226

Abstract: 2SD1859 2SB1238 B1859
Contextual Info: N "7 > v $ /Transistors 2 S D 1 2 2 6 M 2 3 ^ ^ 0 3 0 2SD1226M/2SD1859 '> U 3 > Epitaxial Planar NPN Silicon Transistors /Medium Power Amp. • fl-Jß ^jilS I/D im en sio ns Unit : mm 1) Pc=1W t ± t ^ o 2) ÏB Œ , V Ceo = 80V, lc=700mA 3) 2SB910M /2SB1238<t=l>^'Jc

2SB1238

Contextual Info: SPICE PARAMETER 2SB1238 by ROHM TR Div. * 2SB1238 PNP BJT model * Date: 2006/11/17 .MODEL 2SB1238 PNP + IS=300.00E-15 + BF=228.01 + VAF=20.700 + IKF=.85858 + ISE=300.00E-15 + NE=1.3435 + BR=14.770 + VAR=100 + IKR=6.6440 + ISC=13.781E-12 + NC=1.3072 + NK=.6702

2SB1238

Contextual Info: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. Dimensions (Unit : mm) 2SB1189 4.0 1.5 0.4 1.0 Collector power dissipation

Contextual Info: 2SB1189 / 2SB1238 / 2SB899F 2SD1767 / 2SD1859 / 2SD1200F Transistors Medium Power Transistor —80V, —0.7A I 2SB1189 / 2SB1238 / 2SB889F •Features •A b s o lu te maximum ratings ( T a ^ î S t ) 1 ) High breakdown voltage and high current. {—60V, —0.7A)

2SB1189

Abstract: 2SB1238 2SD1767 2SD1859 T100
Contextual Info: 2SB1189 / 2SB1238 Transistors Medium power transistor −80V, −0.7A 2SB1189 / 2SB1238 zExternal dimensions (Unit : mm) zFeatures 1) High breakdown voltage, BVCEO=−80V, and high current, IC=−0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5

2sd1767

Abstract: 2SD1859
Contextual Info: 2SD1767 / 2SD1859 Transistors Medium power transistor 80V, 0.7A 2SD1767 / 2SD1859 !External dimensions (Units : mm) !Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238. 2SD1767 4.0 1.5 0.4 1.0 VCBO

T2721

Abstract: 2SD1226 uo208
Contextual Info: • -7ÖSÄW 4QE ì> ROHM CO LTD QOQSSQb Q S R H M h 7 > v 7 £ /Transistors 2SB910M/2SB1238 - - T=27-21 PNP yU=i> h 7 > v ^ ^ /Medium Power Amp. Epitaxial Planar PNP Silicon Transistors 2SEE 2SB 1233 • W f Î ^ ï È 0 / D imensiôns Unit : mm 1) pc = 1 W i : * è t ' o

2SB1238

Abstract: 2SB1189 2SD1767 2SD1859 T100
Contextual Info: Medium power transistor 80V, 0.7A 2SB1189 / 2SB1238 Dimensions (Unit : mm) Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SD1767 / 2SD1859. 2SB1189 4.0 1.5 0.4 1.0 VCBO −80 Collector-emitter voltage

2SB1238

Contextual Info: h 7 > v 7. £ / T ransistors 2SB910M/2SB1238 X fcf£ * V T J\s7° U - 2 S B 9 1 0 M ^ PNP V IJ =l > h 7 > V * £ /M e d iu m Power Amp. 2 S B 1 2 3 8 Epitaxial Planar PNP Silicon Transistors • IMI • ÿfïïi'^ â lS I/D im e n s io n s Unit : mm 1) P c = 1 W t * È U ' o

B1238

Abstract: 2SB1238 transistor 2sb1238
Contextual Info: 2SB1238 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • high power: Pc = 1 W 2SB1238 (ATVTV2) • high breakdown voltage and large current capacity: V CEO = -80 V, lc = -0.7 A • complementary pair with 2SD1859 Applications

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

2SB909M

Abstract: 2SC5083 2SD2315 2sb1242 2SB1460 2501863 2SD1225M 2SA1548 2Sc4776 2SB1130
Contextual Info: ATR • ATV Approximately the same size as the TO -92 with up to 1 W power capability. Taped type for automated placement or bulk packaging available. Package , VcEO V ATV ATR A pplication ^VcES ^ V c E R Part No. - 2SA937AMLN L ow Noise 2SA937AM Pre Am p

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)