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    Toshiba America Electronic Components 2SA1241-Y(T6L1,NV)

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    2SA1241 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1241 Toshiba Silicon PNP Transistor Original PDF
    2SA1241 Toshiba PNP transistor Original PDF
    2SA1241 Toshiba TRANS GP BJT PNP 50V 2A 3(2-7B1A) Original PDF
    2SA1241 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SA1241 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1241 Unknown Silicon PNP Transistor Scan PDF
    2SA1241 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1241 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1241 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1241 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1241 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1241 Unknown Cross Reference Datasheet Scan PDF
    2SA1241 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1241 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SA1241 Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF
    2SA1241 Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1241(2-7B1A) Toshiba 2SA1241 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1241(2-7B2A) Toshiba 2SA1241 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1241(2-7J1A) Toshiba 2SA1241 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1241O Toshiba TRANS GP BJT PNP 50V 2A 3(2-7B1A) Original PDF

    2SA1241 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor a1241

    Abstract: a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


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    PDF 2SA1241 2SC3076 transistor a1241 a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


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    PDF 2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076

    2N640S

    Abstract: B0636 B081S 2SA1241Y 2SA1241-Y B0378 B0526-5
    Text: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SK3267 2SB1201 2SA1241Y SMl3550 SMl3553 SMl3576 SMl3579 SMl69502 SMl69510 ~UI 25 30 35 40 RQRr,'} SMl69610 SMl3502 SMl3506 SMl3510 SMl3514 2N2881 2N320S SOT3553 SOT3553 SOT3553 B0378 B0378 B0378 B0636


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    PDF O-12S OT-18S O-202 O-237var 2N640S B0636 B081S 2SA1241Y 2SA1241-Y B0378 B0526-5

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · Excellent switching time: tstg = 1.0 µs (typ.)


    Original
    PDF 2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41

    C3076

    Abstract: 2SC3076 2SA1241
    Text: 2SC3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。


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    PDF 2SC3076 2SA1241 20070701-JA C3076 2SC3076 2SA1241

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original
    PDF 2SA1241 2SC3076 transistor a1241 a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41

    Untitled

    Abstract: No abstract text available
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original
    PDF 2SA1241 2SC3076

    transistor a1241

    Abstract: a1241 semiconductor a1241 transistor a1241 datasheet 2SA1241 2SC3076
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original
    PDF 2SA1241 2SC3076 transistor a1241 a1241 semiconductor a1241 transistor a1241 datasheet 2SA1241 2SC3076

    Untitled

    Abstract: No abstract text available
    Text: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original
    PDF 2SA1241 2SC3076

    A1241

    Abstract: 2SA1241 a1241 pnp 2SC3076
    Text: 2SA1241 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1241 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


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    PDF 2SA1241 2SC3076 A1241 2SA1241 a1241 pnp 2SC3076

    a1241

    Abstract: a1241 pnp 2SA1241 A12-41 2SC3076
    Text: 2SA1241 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1241 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original
    PDF 2SA1241 2SC3076 a1241 a1241 pnp 2SA1241 A12-41 2SC3076

    a1241

    Abstract: 2SA1241 a1241 pnp
    Text: 2SA1241 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1241 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original
    PDF 2SA1241 20070701-JA a1241 2SA1241 a1241 pnp

    Untitled

    Abstract: No abstract text available
    Text: 2SC3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。


    Original
    PDF 2SC3076 2SA1241

    2SA1241

    Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor
    Text: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )


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    PDF 2SA1241) 2SA1241 2SC3076 2SA1241 V10Urns a1241 A 1241 transistor 2sa1241 1241 transistor

    transistor a1241

    Abstract: a1241 a1241 semiconductor 2SA1241 2SC3076
    Text: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)


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    PDF 2SA1241 2SC3076 transistor a1241 a1241 a1241 semiconductor 2SA1241

    2SA1241

    Abstract: 2SC3076
    Text: 2SA1241 TOSHIBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VGE(sat) = -0 .5 V (Max.) (IC = -1 A ) Excellent Switching Time : tgtg = 1.0 /is (Typ.)


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    PDF 2SA1241 2SC3076 961001EAA1 2SA1241

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1241 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : V cE (sat) = -0 .5 V (Max.) (IC = - 1 A ) Excellent Switching Time : tstg = 1.0 jl/.s (Typ.)


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    PDF 2SA1241 2SC3076

    S1854

    Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
    Text: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686


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    PDF 2SA473 2SB553 2SA656A 2SB554 2SA657A 2SB595 2SA658A 2SB596 2SA739 2SB673 S1854 s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001

    2sa1229

    Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A
    Text: - 26 - Ta=25<C. *EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > * r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242


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    PDF 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 2SC3116 O-126) 2SA1248 2SC3117 2sa1229 2SA1227 SA1244 2SA1224 2SC3115 2sC3L

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1241 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS K A 1 Jd 1 POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in mm & 8 MAX. . 5 3 4 0 .8 • 0.6 MAX. Low Collector S atu ratio n V oltage • V cE (sat) = -0 .5 V (Max.) (IC = - 1A)


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    PDF 2SA1241 2SC3076

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1241 POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. S8M AX. o FEATURES : * . Low Collector Saturation Voltage : VcE sat =-0.5V (Max.) (Ic=-1A) 1 . Excellent Switching Time : tstg=1.0/is (Typ.) . Complementary to 2SC3076


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    PDF 2SA1241 2SC3076 50X50XQ

    Untitled

    Abstract: No abstract text available
    Text: 2SA1241 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SW ITCHIN G APPLICATIONS. • • • Low Collector Saturation Voltage : VCE(sat)= —0.5V (Max.) (IC = —1A) Excellent Switching Time : tgt,g= 1.0//S (Typ.)


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    PDF 2SA1241 2SC3076

    2sc3076

    Abstract: V7040
    Text: 2SC3076 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. F EATURES : . L o w Collector Saturation Voltage : v C E s a t = 0 - 5V (Max.) (Ic=lA) . Excellent Switching Time : ts tg= l-0,us (Typ.) . C omplementary to 2SA1241


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    PDF 2SC3076 2SA1241 2sc3076 V7040

    transistor a1241

    Abstract: A1241 2SA1241 2SC3076 2SA124
    Text: 2SA1241 TOSHIBA 2 S A 1 241 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SW ITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 /us (Typ.)


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    PDF 2SA1241 2SC3076 961001EAA1 transistor a1241 A1241 2SA1241 2SA124