Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SA1241 Search Results

    2SA1241 Datasheets (35)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SA1241
    Toshiba Silicon PNP Transistor Original PDF 132.96KB 5
    2SA1241
    Toshiba PNP transistor Original PDF 283.8KB 5
    2SA1241
    Toshiba TRANS GP BJT PNP 50V 2A 3(2-7B1A) Original PDF 173.38KB 5
    2SA1241
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 42.33KB 1
    2SA1241
    Unknown The Transistor Manual (Japanese) 1993 Scan PDF 118.89KB 2
    2SA1241
    Unknown Silicon PNP Transistor Scan PDF 187.21KB 4
    2SA1241
    Unknown Transistor Substitution Data Book 1993 Scan PDF 39.35KB 1
    2SA1241
    Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 44.22KB 1
    2SA1241
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 121.78KB 1
    2SA1241
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 84.17KB 1
    2SA1241
    Unknown Japanese Transistor Cross References (2S) Scan PDF 38.61KB 1
    2SA1241
    Unknown Cross Reference Datasheet Scan PDF 35.19KB 1
    2SA1241
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 49.05KB 1
    2SA1241
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 33.9KB 1
    2SA1241
    Toshiba Silicon PNP transistor for power amplifier and power switching applications Scan PDF 221.17KB 5
    2SA1241
    Toshiba TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF 221.34KB 5
    2SA1241(2-7B1A)
    Toshiba 2SA1241 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, 2-7B1A, 3 PIN, BIP General Purpose Small Signal Original PDF 181.93KB 5
    2SA1241(2-7B2A)
    Toshiba 2SA1241 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7B2A, 3 PIN, BIP General Purpose Small Signal Original PDF 181.93KB 5
    2SA1241(2-7J1A)
    Toshiba 2SA1241 - TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, 2-7J1A, 3 PIN, BIP General Purpose Small Signal Original PDF 181.93KB 5
    2SA1241O
    Toshiba TRANS GP BJT PNP 50V 2A 3(2-7B1A) Original PDF 173.38KB 5
    SF Impression Pixel

    2SA1241 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components 2SA1241-Y(T6L1,NV)

    Trans GP BJT PNP 50V 2A 1000mW 3-Pin(2+Tab) New PW-Mold T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SA1241-Y(T6L1,NV) 675 9
    • 1 -
    • 10 $0.39
    • 100 $0.32
    • 1000 $0.27
    • 10000 $0.27
    Buy Now
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1241-Y(6L1YS,NQ 11,120
    • 1 $1.24
    • 10 $1.24
    • 100 $1.24
    • 1000 $1.24
    • 10000 $0.37
    Buy Now

    2SA1241 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1241

    Abstract: a1241 A 1241 transistor 2sa1241 1241 transistor
    Contextual Info: TOSHIBA TRANSISTOR SEM ICONDUCTOR TOSHIBA TECHNICAL DATA 2 S A 1 241 SILICON PNP EPITAXIAL TYPE PCT PROCESS (2SA1241) POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • • • Low Collector Saturation Voltage • VCE(sat)“ —0.5V (Max.) (Iç;= -1A )


    OCR Scan
    2sa12412sc3076v10urnsa1241+3a 1241transistor 2sa12411241 transistor PDF

    transistor a1241

    Abstract: a1241 transistor 2sa1241 2SA1241 2SC3076 IC 1029
    Contextual Info: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)


    OCR Scan
    2sa12412sc30762sa124transportationtransistor a1241+3a1241transistor 2sa1241ic 1029 PDF

    transistor a1241

    Abstract: a1241 a1241 semiconductor 2SA1241 2SC3076
    Contextual Info: 2SA1241 TO SH IBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • • • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 jus (Typ.)


    OCR Scan
    2sa12412sc3076transistor a1241a1241+1a1241 semiconductor PDF

    2SA1241

    Abstract: 2SC3076
    Contextual Info: 2SA1241 TOSHIBA 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VGE(sat) = -0 .5 V (Max.) (IC = -1 A ) Excellent Switching Time : tgtg = 1.0 /is (Typ.)


    OCR Scan
    2sa12412sc3076961001eaa1 PDF

    transistor a1241

    Abstract: a1241 A1241 transistor a1241 semiconductor transistor a1241 datasheet 2SA1241 2SC3076 a1241 pnp a124* transistor
    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original
    2sa12412sc3076transistor a1241a1241+5a1241 transistora1241 semiconductortransistor a1241 datasheeta1241 pnpa124* transistor PDF

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076
    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original
    2sa12412sc3076transistor a1241a1241+2transistor a1241 datasheeta1241 semiconductor PDF

    2N640S

    Abstract: B0636 B081S 2SA1241Y 2SA1241-Y B0378 B0526-5
    Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SK3267 2SB1201 2SA1241Y SMl3550 SMl3553 SMl3576 SMl3579 SMl69502 SMl69510 ~UI 25 30 35 40 RQRr,'} SMl69610 SMl3502 SMl3506 SMl3510 SMl3514 2N2881 2N320S SOT3553 SOT3553 SOT3553 B0378 B0378 B0378 B0636


    Original
    o-12sot-18so-202o-237var+72n640sb0636b081s2sa1241y2sa1241-yb0378b0526-5 PDF

    Contextual Info: T O SH IB A 2SA1241 2 S A 1 241 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS Low Collector Saturation Voltage : V cE (sat) = -0 .5 V (Max.) (IC = - 1 A ) Excellent Switching Time : tstg = 1.0 jl/.s (Typ.)


    OCR Scan
    2sa12412sc3076 PDF

    S1854

    Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
    Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686


    OCR Scan
    2sa4732sb5532sa656a2sb554+162sa657a2sb5952sa658a2sb5962sa7392sb673s1854s1854 amp4002mp30092sc33032sc520a2sc519amp4004s2055mp4001 PDF

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet 2SA1241 2SC3076 a1241 semiconductor a124* transistor A12-41
    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) · Excellent switching time: tstg = 1.0 µs (typ.)


    Original
    2sa12412sc3076transistor a1241a1241+4transistor a1241 datasheeta1241 semiconductora124* transistora12-41 PDF

    C3076

    Abstract: 2SC3076 2SA1241
    Contextual Info: 2SC3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。


    Original
    2sc30762sa124120070701-jac3076 PDF

    transistor a1241

    Abstract: a1241 transistor a1241 datasheet a1241 semiconductor 2SA1241 2SC3076 A1241 transistor A12-41
    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original
    2sa12412sc3076transistor a1241a1241+4transistor a1241 datasheeta1241 semiconductora1241 transistora12-41 PDF

    2sa1229

    Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A
    Contextual Info: - 26 - Ta=25<C. *EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > * r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242


    OCR Scan
    2sa12152sa12162sa12202sa1220a+112sa12212sc3116o-1262sa12482sc31172sa12292sa1227sa12442sa12242sc31152sc3l PDF

    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 s (typ.)


    Original
    2sa12412sc3076 PDF

    Contextual Info: T O SH IB A 2SA1241 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS K A 1 Jd 1 POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in mm & 8 MAX. . 5 3 4 0 .8 • 0.6 MAX. Low Collector S atu ratio n V oltage • V cE (sat) = -0 .5 V (Max.) (IC = - 1A)


    OCR Scan
    2sa12412sc3076 PDF

    Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1241 POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. S8M AX. o FEATURES : * . Low Collector Saturation Voltage : VcE sat =-0.5V (Max.) (Ic=-1A) 1 . Excellent Switching Time : tstg=1.0/is (Typ.) . Complementary to 2SC3076


    OCR Scan
    2sa12412sc307650x50xq PDF

    Contextual Info: 2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1241 Power Amplifier Applications Power Switching Applications Unit: mm • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • Excellent switching time: tstg = 1.0 µs (typ.)


    Original
    2sa12412sc3076 PDF

    Contextual Info: 2SA1241 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SW ITCHIN G APPLICATIONS. • • • Low Collector Saturation Voltage : VCE(sat)= —0.5V (Max.) (IC = —1A) Excellent Switching Time : tgt,g= 1.0//S (Typ.)


    OCR Scan
    2sa12412sc3076 PDF

    A1241

    Abstract: 2SA1241 a1241 pnp 2SC3076
    Contextual Info: 2SA1241 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1241 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original
    2sa12412sc3076a1241a1241 pnp PDF

    a1241

    Abstract: a1241 pnp 2SA1241 A12-41 2SC3076
    Contextual Info: 2SA1241 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1241 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original
    2sa12412sc3076a1241a1241 pnp+1a12-41 PDF

    a1241

    Abstract: 2SA1241 a1241 pnp
    Contextual Info: 2SA1241 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1241 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


    Original
    2sa124120070701-jaa1241a1241 pnp PDF

    Contextual Info: 2SC3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。


    Original
    2sc30762sa1241 PDF

    2sc3076

    Abstract: V7040
    Contextual Info: 2SC3076 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm POWER SWITCHING APPLICATIONS. F EATURES : . L o w Collector Saturation Voltage : v C E s a t = 0 - 5V (Max.) (Ic=lA) . Excellent Switching Time : ts tg= l-0,us (Typ.) . C omplementary to 2SA1241


    OCR Scan
    2sc30762sa1241v7040 PDF

    transistor a1241

    Abstract: A1241 2SA1241 2SC3076 2SA124
    Contextual Info: 2SA1241 TOSHIBA 2 S A 1 241 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SW ITCHING APPLICATIONS • Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Iç; = -1 A ) Excellent Switching Time : tstg = 1.0 /us (Typ.)


    OCR Scan
    2sa12412sc3076961001eaa1transistor a1241+2a12412sa124 PDF