C3076 Search Results

C3076

Abstract: 2SC3076
Contextual Info: Transistors SMD Type Silicon NPN Epitaxial C3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15

Contextual Info: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

transistor c3076

Abstract: C3076 2SC3076 2SA1241
Contextual Info: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

MAX8770

Abstract: ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta
Contextual Info: 1 2 3 4 5 CPU Yonah/Merom 478 PIN micro FC-PGA 1 RJ9 Block Diagram P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM CRT P11 P2 P12 945GM/PM R/G/B ICS954310 R/G/B 1466 PIN (micro FCBGA)

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

Contextual Info: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)

SW461

Abstract: CXA1810AQ SG45 DIODE CXA1810AR SW30 rv107 AR2524
Contextual Info: CXA1810AQ/AR Luminance and Color Signal Processing for 8mm VCR For the availability of this product, please contact the sales office. Description The CXA1810AQ/AR is an IC designed for 8mm VCR Y/C main signal processing for consumer use. Equipped with many built-in filters, the

SG45 DIODE

Abstract: CXA1810AQ CXA1810AR SW30 rf tRAP fILTER dds AR2524 3579545Hz C2021M FCE22 fnc4
Contextual Info: CXA1810AQ/AR Luminance and Color Signal Processing for 8mm VCR Description The CXA1810AQ/AR is an IC designed for 8mm VCR Y/C main signal processing for consumer use. Equipped with many built-in filters, the CXA1810AQ/AR is a one-chip main signal processing system that greatly reduces the number

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

C3076

Abstract: 2SA1241 2SC3076
Contextual Info: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

c3076

Abstract: 2SA1241 2SC3076 transistor c3076
Contextual Info: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) · Excellent switching time: tstg = 1.0 µs (typ.)

C3076

Abstract: 2SC3076 2SA1241
Contextual Info: C3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。

transistor c3076

Abstract: C3076 2SA1241 2SC3076 024 marking code
Contextual Info: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)

sil3512

Abstract: C3088 CMOS Camera G966-25 C3198 PC87541 ICS9lpr310 7336A 915GM c3197 VT6212
Contextual Info: 1 2 3 4 5 478 PIN micro FC-PGA 1 RJ6 Block Diagram CPU Yonah/Merom P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM 945GM/PM R/G/B CRT P11 R/G/B 1466 PIN (micro FCBGA) 37.5mm x 37.5mm

2SC3076

Abstract: C3076 2SA1241
Contextual Info: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

Contextual Info: C3076 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3076 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • スイッチング時間が速い。 : tstg = 1.0 s (標準) 2SA1241 とコンプリメンタリになります。

SG45 DIODE

Abstract: dds fm modulator diode SG54 sg32 diode FNC10 3m color dropout compensation AM/FM ic sony SG45 CXA1810AQ CXA1810AR
Contextual Info: CXA1810AQ/AR Luminance and Color Signal Processing for 8mm VCR Description The CXA1810AQ/AR is an IC designed for 8mm VCR Y/C main signal processing for consumer use. Equipped with many built-in filters, the CXA1810AQ/AR is a one-chip main signal processing system that greatly reduces the number

Contextual Info: m DOUBLE HETEROJUNCTION AIGaAs RED LOW CURRENT DISPLAYS OPTOELECTRflHiCS 7.6mm 0.3in 14.2mm (0.56in) 20.0mm (0.8in) MAN30X0A MAN60X0 MAN80X0 DESCRIPTION This line of solid state LED displays uses newly developed Double Heterojunction (HD) AIGaAs/GaAs material to emit deep red light at 650 nm. This material

Contextual Info: C3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)

6265A

Abstract: M96-SCE RTL8111d kb3926 RTL8103 RTL8111DL SLG8SP626V C3198 RTL8103E p2003bvg
Contextual Info: 1 2 3 A 1 2 3 4 5 6 : : : : : : 5 6 7 8 01 UT12 SYSTEM DIAGRAM PCB STACK UP LAYER LAYER LAYER LAYER LAYER LAYER 4 DDRII DDRII-SODIMM1 TOP IN1 IN2 VCC IN3 BOT 667/800 MHz AMD Lion Sabie Griffin PAGE 7,8 DDRII DDRII-SODIMM2 CPU THERMAL SENSOR S1G2 Processor