2SB1201 Search Results

Contextual Info: Product specification 2SB1201 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

2sb1201

Contextual Info: O rd e rin g n u m b e r: EN 2 1 1 2 B 2SB1201/2SD1801 SA\YO PNP/NPN Epitaxial Planar Silicon Transistors i High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes

2SB1201

Contextual Info: Ordering number:ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications unit:mm 2045B [2SB1201/2SD1801] 6.5 5.0 4 2.3 5.5 • Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage.

2SB1201

Abstract: EN211 2044B
Contextual Info: Ordering number:EN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2045B [2SB1201/2SD1801]

2N640S

Abstract: B0636 B081S 2SA1241Y 2SA1241-Y B0378 B0526-5
Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 >= 20 SK3267 2SB1201 2SA1241Y SMl3550 SMl3553 SMl3576 SMl3579 SMl69502 SMl69510 ~UI 25 30 35 40 RQRr,'} SMl69610 SMl3502 SMl3506 SMl3510 SMl3514 2N2881 2N320S SOT3553 SOT3553 SOT3553 B0378 B0378 B0378 B0636

2SB120

Abstract: 2SB1201
Contextual Info: Transistors SMD Type High-Current Switching Applications 2SB1201 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15

D1801

Abstract: la 1201 sanyo transistor 2SB1201 2112b 2112-B 2SD 2581 2044B 2SB1201 2SD1801 21124- 4
Contextual Info: Ordering number: EN 2112B 2SB1201/2SD1801 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications •Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET, MBIT processes ■Large current capacity and wide ASO

2SB1201

Abstract: transistor 2SB1201
Contextual Info: Ordering number : EN2112C 2SB1201/2SD1801 Bipolar Transistor http://onsemi.com – 50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • • • Large current capacitance and wide ASO

2SB1201

Abstract: 2044B 2SD1801
Contextual Info: Ordering number:ENN2112B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1201/2SD1801 High-Current Switching Applications Applications Package Dimensions • Voltage regulators, relay drivers, lamp drivers, electrical equipment. unit:mm 2045B [2SB1201/2SD1801]

Contextual Info: 2SB1201/2SD1801 Ordering number : EN2112C SANYO Semiconductors DATA SHEET 2SB1201/2SD1801 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

2SD1761

Abstract: 2sb1216 2SB1220 2sb118 2SB1187 2SB1204 2SD1812 2SB1184 2SB1208 2SB1188
Contextual Info: - 80 - Ta=25'C, *EP(älc=25cC 2SB1184 2SB1184F5 2SB1185 2SB1186 2SB1186A 2SB1187 2SBU88 2SB1189 2SBU90 2SBU90A 2SB1191 2SB1191A 2SB1192 2SB1192A 2SB1193 2SB1194 2SB1201 2SB1202 2SB1203 2SB1204 2SB1205 2SB1206 2SB1207 2SB1208 2SB1209 2SB1212 2SB1214 2SB1215

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

2SB1205

Abstract: 2SB1143 2sc4675
Contextual Info: SAfÊYO LOW-SATURATI ON VOLTAGE TR SERI ES Small-Signal Transistors. NO. 2 (*)MBIT process technology "New manufacturing method,Multi Base Island Transistors” For PNP, (-) sign is omitted. *:Tc=25’C. #:Contains base to emitter resistance(RBE). Type No.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —