2SB120 Search Results

2SB1205

Abstract: strobe ic 555
Contextual Info: Transistors SMD Type Strobe High-Current Switching Applications 2SB1205 TO-252 Features 6.50 +0.2 5.30-0.2 Low saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1

Contextual Info: Ordering number: EN 4877 FX501 No.4877 I P N P Epitaxial P lan a r Silicon Transistor SA%YOi High-Current Switching Applications F eatures • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package.

SMD BR 08

Abstract: 2SB1203
Contextual Info: Transistors SMD Type High-Current Switching Applications 2SB1203 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max

Contextual Info: Product specification 2SB1203 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

2SB1204

Abstract: 2SD1804 2044B TF-450
Contextual Info: Ordering number:EN2086B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1204/2SD1804 High-Current Switching Applications Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Package Dimensions

2SB1202

Abstract: 2044B 21133
Contextual Info: Ordering number:EN2113B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1202/2SD1802 High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2045B [2SB1202/2SD1802]

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

D1803

Abstract: transistor d1803 Transistor 2SB1203 IC D1803 pa 2030a CAW 04 22E SD1803 2SB1203 NPN S2e d1803 transistor
Contextual Info: SA NY O S E M I C O N D U C T O R 2SB1203, 2SD1803 CORP TWOTb SSE D OdOTnG 3 T - 3 3 -IR T -3 3 • ♦ P N P /N P N Epitaxial Planar Silicon Transistors 2 04 4 High-Current Switching Applications 2085B A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications

2SB1205

Abstract: ic 2114 2044B EN211
Contextual Info: Ordering number:EN2114B PNP Epitaxial Planar Silicon Transistor 2SB1205 Strobe High-Current Switching Applications Applications • Strobe, voltage regulators, relay drivers, lamp drivers. Package Dimensions unit:mm 2045B [2SB1205] Features · Adoption of FBET, MBIT processes.

Contextual Info: Ordering num ber:EN 4903 _FX503 No.4903 i PN P E pitaxial Planar Silicon T ransistor High-Current Switching Applications F e a tu r e s •Composite type w ith 2 PN P tran sisto rs contained in one package, facilitating high-density mounting. • The FX503 houses two chips, each being equivalent to the 2SB1202, in one package.

Transistor 2SB1203

Abstract: 2SB1203 1000P
Contextual Info: SPICE PARAMETER 2SB1203 LARGE-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter IS 1.000p BF 258.0 NF 999.0m 50.00 VAF IKF 1.685 ISE 352.0f NE 2.300 30.00 BR NR 1.00 VAR 15.00 IKR 330.9m Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value

transistor B1202

Abstract: 2SD1802 b1202 t 2SB1202S
Contextual Info: Ordering number : EN2113E 2SB1202/2SD1802 Bipolar Transistor http://onsemi.com – 50V, (–)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • • • Large current capacitance and wide ASO

2SB1209

Contextual Info: Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 • Absolute Maximum Ratings * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400

2SB1207

Contextual Info: Transistors 2SB1207 Silicon PNP epitaxial planar type For low-voltage output amplification Unit: mm 4.0±0.2 • Features • Low collector-emitter saturation voltage VCE sat • Optimum for high-density mounting • Allowing supply with the radial taping

2SB1209

Contextual Info: Transistors 2SB1209 Silicon PNP triple diffusion planar type For low-frequency amplification Unit: mm 2.5±0.1 6.9±0.1 1.0 (1.5) R 0.9 2.4±0.2 1.0±0.1 • Absolute Maximum Ratings Ta = 25°C 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 • High collector-base voltage (Emitter open) VCBO

2SB1207

Contextual Info: Transistor 2SB1207 Silicon PNP epitaxial planer type For low-voltage output amplification Unit: mm 4.0±0.2 Ta=25˚C marking Parameter Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –10 V Emitter to base voltage

2SB1203

Abstract: 2044B 2SD1803
Contextual Info: Ordering number:ENN2085B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1203/2SD1803 High-Current Switching Applications Applications Package Dimensions Æ Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

2SB1209

Contextual Info: Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit: mm 6.9±0.1 1.5 • Absolute Maximum Ratings * Ta=25˚C Symbol Ratings Unit Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400

Contextual Info: Product specification 2SB1201 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1

Contextual Info: Product specification 2SB1204 TO-252 Features 6.50 +0.2 5.30-0.2 Low collector-to-emitter saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

Contextual Info: Product specification 2SB1202 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Fast switching speed.

2sb1201

Contextual Info: O rd e rin g n u m b e r: EN 2 1 1 2 B 2SB1201/2SD1801 SA\YO PNP/NPN Epitaxial Planar Silicon Transistors i High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes

Contextual Info: UTC 2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SB1202 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES 1 *Adoption of FBET, MBIT processes *Large current capacity and wide ASO

Contextual Info: UTC 2SB1202 PNP EPITAXIAL PLANAR SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SB1202 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES 1 *Adoption of FBET, MBIT processes *Large current capacity and wide ASO