2SB1205 Search Results

2SB1205

Abstract: strobe ic 555
Contextual Info: Transistors SMD Type Strobe High-Current Switching Applications 2SB1205 TO-252 Features 6.50 +0.2 5.30-0.2 Low saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3 .8 0 +0.25 2.65 -0.1

Contextual Info: Ordering number: EN 4877 FX501 No.4877 I P N P Epitaxial P lan a r Silicon Transistor SA%YOi High-Current Switching Applications F eatures • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. • The FX501 houses two chips, each being equivalent to the 2SB1205, in one package.

2SB1205

Abstract: ic 2114 2044B EN211
Contextual Info: Ordering number:EN2114B PNP Epitaxial Planar Silicon Transistor 2SB1205 Strobe High-Current Switching Applications Applications • Strobe, voltage regulators, relay drivers, lamp drivers. Package Dimensions unit:mm 2045B [2SB1205] Features · Adoption of FBET, MBIT processes.

transistor bf 520

Abstract: 2SB1205
Contextual Info: 2SB1205 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 300.0f IS 355.0 BF 970.0m NF 5.20 VAF 3.60 IKF 10.0p ISE 2.50 NE 100.0 BR 975.0m NR 5.00 VAR 100.0m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB EG XTI Value

2SB1205

Abstract: 2044B ITR09216
Contextual Info: Ordering number:ENN2114B PNP Epitaxial Planar Silicon Transistor 2SB1205 Strobe High-Current Switching Applications Applications Package Dimensions • Strobe, voltage regulators, relay drivers, lamp drivers. unit:mm 2045B [2SB1205] 2.3 5.5 · Adoption of FBET, MBIT processes.

Contextual Info: Product specification 2SB1205 TO-252 Features 6.50 +0.2 5.30-0.2 Low saturation voltage. +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 0.127 max 3 .8 0 +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1 +0.15 0.50 -0.15 +0.2

2044B

Abstract: 2SB1205 D105 ITR09216 ITR09217 ITR09218 21144
Contextual Info: 注文コード No. N 2 1 1 4 B 2SB1205 No. N 2 1 1 4 B 41400 ＊ 半導体ニューズ No.2114 ’ 87-88 データブック個別半導体素子トランジスタ編 No.2114A とさしかえてください。 2SB1205 PNP エピタキシァルプレーナ形シリコントランジスタ

2sb1205

Abstract: 2044b
Contextual Info: O rd e rin g n um b e r : EN 2 1 1 4 B 2SB1205 N0.2114B PNP Epitaxial Planar Silicon Transistor Strobe High-Current Switching Applications Applications . Strobe, voltage regulators, relay drivers, lamp drivers. Features . Adoption of FBET, MBIT processes.

Transistor B1205

Abstract: Transistor B1205 Circuit 2SB1205
Contextual Info: 2SB1205 Ordering number : EN2114C SANYO Semiconductors DATA SHEET 2SB1205 PNP Epitaxial Planar Silicon Transistor Strobe High-Current Switching Applications Applications • Flash, voltage regulators, relay drivers, lamp drivers Features • • • • Low saturation voltage

Contextual Info: Ordering number:ENN2114B PNP Epitaxial Planar Silicon Transistor 2SB1205 Strobe High-Current Switching Applications Applications Package Dimensions • Strobe, voltage regulators, relay drivers, lamp drivers. unit:mm 2045B [2SB1205] 2.3 0.5 5.5 · Adoption of FBET, MBIT processes.

2SD1761

Abstract: 2sb1216 2SB1220 2sb118 2SB1187 2SB1204 2SD1812 2SB1184 2SB1208 2SB1188
Contextual Info: - 80 - Ta=25'C, *EP(älc=25cC 2SB1184 2SB1184F5 2SB1185 2SB1186 2SB1186A 2SB1187 2SBU88 2SB1189 2SBU90 2SBU90A 2SB1191 2SB1191A 2SB1192 2SB1192A 2SB1193 2SB1194 2SB1201 2SB1202 2SB1203 2SB1204 2SB1205 2SB1206 2SB1207 2SB1208 2SB1209 2SB1212 2SB1214 2SB1215

Contextual Info: Ordering number : EN2114C 2SB1205 Bipolar Transistor http://onsemi.com –20V, –5A, Low VCE sat , PNP Single TP/TP-FA Applications • Flash, voltage regulators, relay drivers, lamp drivers Features • • • • Low saturation voltage Adoption of FBET, MBIT processes

2SB1205

Abstract: FX851
Contextual Info: SANYO New Products Of New Package 5/6-pi n XP Seri es :FX type 2 SANYO new 5 /6 -p in XP packages a re in te rm ed ia te sized d e vices between SANYO PCP and TP packages and have high power cap a b ility . This packages lin e in clu d e s complex types of la rg e -c u rre n t sw itchin g t r a n s i s to r s , of a low s a tu ra tio n -v o lta g e t r a n s i s to r ( f a s t

2SD1300

Abstract: transistor 2SB1201 2SA124 transistor 2SD1724 2SB1205
Contextual Info: SANYO TP Tiny Package Transistor Series Our TP (Tiny Package) transistor series are smaller in size as compared with the TO-126,T0-220AB heretofore in use and facilitate high-density mounting that makes it possible to make electronic equipment smaller and slimmer.

2SB1205

Abstract: 2044B 2114B
Contextual Info: O rd e rin g num ber: EN 2114B N0.2114B _2 S B 1 2 0 5 PNP Epitaxial Planar Silicon Transistor I Strobe High-Current Switching Applications Applications . Strobe, voltage regulators, relay drivers, lamp drivers. Features . Adoption of FBET, MBIT processes.

marking 501

Abstract: BX1388
Contextual Info: Ordering number:EN4877 FX501 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Package Dimensions • Composite type with 2 PNP transistors contained in one package, facilitating high-density mounting. · The FX501 houses two chips, each being equivalent

2SA1264N

Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
Contextual Info: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207

2SB1547

Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Contextual Info: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

RTO BH

Contextual Info: Ordering num ber:EN4877 _FX501 No.4877 i P N P E pitaxial P la n a r Silicon T ra n sisto r i High-Current Switching Applications F e a tu re s • Composite type w ith 2 P N P tran s isto rs contained in one package, facilitating high-density mounting.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc