2SC20 Search Results

2SC2075

Abstract: 2SC207S 27mhz rc circuit 2SC2075A
Contextual Info: SILICON NPN EPITAXIAL T Y P E 2SC2075 27MHz POWER AMPLIFIER APPLICATIONS. Unit in mm 03.6±O .2 FEATURES : 31n '0 • Recommended for Output Stage Application of AM 4W Transmitter. & • High Power Gain. • Wide Area of Safe Operation. MAXIMUM RATINGS Ta=25°C

2SC2056

Abstract: RF NPN POWER TRANSISTOR 7 WATT 175MHZ TO-39 c b t8e BH Rf transistor
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2056 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2056 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band portable or hand-held radio applications. D im e n sio n s in m m

2SC2078

Abstract: 2sc2078 amplifier 2SC2078 Datasheet 2sc2078 Transistor NPN rf transistor RF POWER TRANSISTOR NPN 2sc2078 2sc207827mhz
Contextual Info: Ordering number:EN462E NPN Epitaxial Planar Silicon Transistor 2SC2078 27MHz RF Power Amplifier Applications Package Dimensions unit:mm 2010C [2SC2078] 1 : Base 2 : Collector 3 : Emitter JEDEC : TO-220AB EIAJ : SC-46 Specifications Absolute Maximum Ratings at Ta = 25˚C

2SC2085

Abstract: 300V power amplifier
Contextual Info: SavantIC Semiconductor Product Specification 2SC2085 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High breakdown voltage ·High transition frequency APPLICATIONS ·For line-operated AF amplifier and chrominance output applications PINNING

2SC2022

Contextual Info: SavantIC Semiconductor Product Specification 2SC2022 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage APPLICATIONS ·Series regulator, switch, and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SC2097

Abstract: transistor 91 330 T40E
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed Dimensions in mm fo r RF power am p lifie rs in HF band m ob ile radio applications. R1

transistor C2001

Abstract: c2001 transistor 2SC200
Contextual Info: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A

2SC1260

Abstract: 2SC1815 2sc1424 2SC944 2SC930 2SC2094 2SC1681 2SC2021 2sc2990 2SC1345
Contextual Info: - « m * 2SC 15 2 8 2SC 1529 € tt T y p e No. M Manuf. SANYO H £ = £ S TOSHIBA 2SC2102 B H NEC ¿ HITACHI « ± FUJITSU Ü fò 2SC299Ö 2SC2888 □ T MATSUSHITA MITSUBISHI — 117 A ROHM 2SC2034 2SC1260 * 2SC 1537 □- A 2SC930 * 2SC 15 3 8 □- A 2SC930

transistor 2SA

Abstract: 2SA940 AC550 2sa 940 2SC2073
Contextual Info: S / U D > P N P = * # « * - t t f é h ^ : / 5; 3 ^ SILICON PNP TRIPLE DIFFUSED M ESA TRANSISTOR o nummm O MflilpJttiaffl 940 2SA Unit in m m 0Z.6±O.2 o Power Amplifier o Vertical Output 2302073 Applications Applications t ^ i' '/ >J Complementary to 2SC2073

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

2SA934

Abstract: 2SA934 transistor 2sc2060
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power dissipation PCM: 0.75 W (Tamb=25℃) z Low saturation voltage (VCE(sat)=0.15V at 500mA) z Complementary pair with 2SA934

A940A

Abstract: 2SA940A A940 2SC2073A
Contextual Info: 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT Process 2SA940A Power Amplifier Applications Vertical Output Applications • Unit: mm Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

transistor 2SC2078

Abstract: 2sc2078 2sc2078 Transistor 2SC207S
Contextual Info: Ordering number : EN462E N0.462E 2SC2078 NPN Epitaxial Planar Silicon Transistor SANYO 27MHz RF Power Amp Applications Absolute Maxima» Ratings at Ta=25°C Colleetor-to-Base Voltage CBO Collector-to-Emitter Voltage VCER Emitter-to-Base Voltage VEB0 Collector Current

fujitsu transistor

Abstract: 2SC2043 ICB01 27mhz transistor citizen mhz 2sc204 tranceiver 27Mhz
Contextual Info: FU JITS U TRANSISTOR :.t£i 2SC2043 is an NPN epitaxial planar type silicon transistor and is designed for use in output stage of 27MHz-citizen band SSB tranceiver application. Ohls transistor has the following outstanding features. * Power Output 12 * Power Gain

Contextual Info: ROHM CO LTD - 40E D B 7 Ô2 fi T O O O S t f l S h 7 > y ' X $ /Transistors 4 E3RHM 2SC2058/2SC2058S . T -3 H 7 x fc° £ ^ V T J i' 7 ° u - i - B N P N V U 3 > h ÿ > y 3. £ n t î J l l j £ ii lf i f f l / R F A m p lif ie r E p ita x ia l P la n a r N P N S ilic o n T r a n s is to r s

Contextual Info: S A NK EN E L E C T R I C CO LTD SSE D • □ □ □ O T 4 E 33T « S A K J i Silicon NPN Triple Diffused Mesa 2SC2023 Application Example : • Outline Drawing 1 .MT-25(TO220 S e rie s R equlator, S w itc h , and General P urpose_

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2060 TRANSISTOR NPN 1. EMITTER FEATURE 2. COLLECTOR z Power Dissipation PCM: 0.75 z Low Saturation Voltage (VCE(sat)=0.15V at 500mA) z Complementary Pair with 2SA934

2SA940

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2073 Features • • • • • • Halogen free available upon request by adding suffix "-HF" Wide safe Operating Area.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2060 ＴＯ－９２ＭＯＤ TRANSISTOR（ NPN ） 1.EMITTER FEATURE Power dissipation PCM : 0.75 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage

2SC2076

Abstract: class d amp ic e1aj T092
Contextual Info: 2SC2076 2SC2076 '> ij u y N P N x fcf ^=-'> 77/ U' / v — NP N Ep itax ial Planar Amplifier W ^ [/F e a tu r e s A M /F M R FliipI, m ¡1#-, I F i c * T 't o Suitable for RF amp., OSC, mix. and IF amp. in F M /A M radios. ^ \ / L a r g e with standing capability against

2SC2062

Abstract: 2SC2062B 2SC2062-C LEA100
Contextual Info: ROHM CO 4DE LTD » Di ODOSb'iö 2 13RHM js 7 > y X $ /Transistors 2SC2062 -T - 3 S - 2 ? V —m NPN y U 3 > ? - V > h > b y > y Z $ g i i l i & 7.^ High Gain Amp. & Switching

2SC203

Abstract: 2SC2034 I01-A O-450
Contextual Info: & 2SC2034 2SC2034 7 ° U - + Ü / S i N P N E p ita x ia l P la n a r v y = i> N PN h 7 > v ~ K 3 lflf fi;J3 ff i/ T r a n s c e iv e r Power Output i# iS/F eatü res • iSifŒ /V cBO = 120V üi Süfê / Absolute Maximum Ratings T a=25°C Item Symbol Value

2sc2058 transistor

Abstract: 2SC2058
Contextual Info: ST 2SC2058 High-frequency Amplifier Transistor Features 1 Low collector capacitance Cob:Typ. 1.3pF) 2) Low rbb, high gain and excellent noise characteristics. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 oC) Symbol Value Unit

2SC2002

Abstract: 2SC2002 equivalent NPN Transistor TO92 300ma
Contextual Info: ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.