2SC2381 Search Results

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

2SC2381

Abstract: ic 10w power amplifier 5v 10w amplifier ic
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2381 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P 0 =25W Min. (f=4 7 0 M H z , V CC=12.6V, . 100% Tested Angles w i t h Pi=10W) for Load M i s m a t c h Stress at All Phase 30:1 VSWR

Contextual Info: 2SC2381 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)35 I(C) Max. (A)6.0 Absolute Max. Power Diss. (W)50 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

2SC1815

Abstract: 2sc372 2sc1741 2sc2061 2sc2381 2sc1907 2SC2284 2sc1726 2SC2495 2sc458
Contextual Info: - 10 2 - £ tt € Manuf. 2SC 944$ a « 2SC 945 / s n 2SC 947 ^ T 2SC 948 ^ te T m Type No. * * * h SANYO * M B TOSHIBA S NEC B ÍL HITACHI 2SC1907 2SC1215 2SC2926 2SC458 2SC2634 2SC2410 2SC828 2SC387A %rBM 2SC1959 2SC945 2SC454 WrB m 2SU»4ö 2SC454 *

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA 5b dF J í DTPBSÜ DDD7Sab DISCRETE/OPTO SILICON NPN EPITAXIAL PLANAR TYPE_ U n i t i n mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . O u t p u t P o w e r : P 0 - 2 5 W (M in .) (f= 4 70M H z, VCC= 1 2 .6 V , Pi=10W )

2SC2381

Abstract: 2SC238 10ID ic 10w power amplifier
Contextual Info: TOSHIBA{DISCRETE/OPTO} Tb DÉTJ^IDTPESÜDDDTSati MI / 9097 250 TO SHIBA CD IS C R E T E / O P T O SILICON NPN EPITAXIAL PLANAR TYPE_ Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. 2-0a.2±Q. FEATURES: . Output Power : P0=25W Min.) (f=470MHz, V CC=12.6V, Pi=10W)

S1854

Abstract: s1854 a mp4002 MP3009 2SC3303 2SC520A 2SC519A MP4004 S2055 mp4001
Contextual Info: •A L P H A N U M E R IC A L IN D E X # Page Type No. Type No. 2SA473 121 2SB553 2SA656A 2SB554 2SA657A 123 2SB595 2SA658A 2SB596 2SA739 127 2SB673 2SA940 130 2SB674 2SA1012 132 2SB675 2SA1195 135 2SB676 2SA1225 136 2SB677 2SA1241 138 2SB679 2SA1242 142 2SB686

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

mg75n2ys40

Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

mg75n2ys40

Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

2SC2407A

Abstract: 2SC2348 2SC2366 2SC2407 2-10H1A 2SC2381 2sc2373 2SC2388 2SC2395 2SC2349
Contextual Info: - 122 - m % ft £ iÉ M X Ë fà 11 V 2SC2348 m s VHF RF 2SC2349 jícs 2SC2351 s 2SC2352 2SC2353 2SC2356 2SC2359 2 S C 2 3 6 0 (H) 2SC2362 2SC2362K 2SC2366 2SC2367 2SC2368 2SC2369 2SC2371 2SC2373 n BW. BM Ü±Ü siriË m H# 3$ â± Ü BM BM BM BU BM 2SC2377