2SC200 Search Results

transistor C2001

Abstract: c2001 transistor 2SC200
Contextual Info: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A

tt 2144

Abstract: 2SC2320 2SC3358 2SD811 TOSHIBA TT 2141 2SC2381 2SD467 2SC2496A 2SC2914 2SC1947
Contextual Info: - m « Type No. & M £ Manuf. SANYO £ TOSHIBA 2SC 2117 m B NEC 2SC 2119 2SC 2120 y 2SC 2121 f 2SC 2122 2SC 2123 M S M M £ M ^ M £ M ÌE «S T MATSUSHITA 2SC2001 2SD734 2SC1947 2SC 2129 = 2SC 2130 = m m 2SC 2131 H s 2SC1001 2SC2762 2SC 2132 , = m 2SC2381

2SC2002

Abstract: 2SC2002 equivalent NPN Transistor TO92 300ma
Contextual Info: ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2002

Abstract: transistor 2sc2002 100C
Contextual Info: NPN SILICON TRAN SISTO R 2SC2002 DESCRIPTION The 2SC2002 is designed fo r use in driver stage of high voltage audio equipments. PACKAGE DIMENSIONS in millimeters inches FEATURES 5.2 MAX. (0.204 MAX.; • High total power dissipation. PT : 600 mW • High hp£ and high voltage.

2SC3361-5

Abstract: 2SC181SL-O BFR41 L 2 KT3102 TEC9014B LOW-POWER SILICON NPN 2S0637 KT620A KT3102A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 - 1S - 20 2S 30 2SD601A 2S0637 2SC2000K 2SC2603 2SC147S KT620A HSE4S4 MPS-A09 KT3102A 2N4966 ~~~~~~ JE9214A TEC9014B MPSA09 MPSA09 MPSA09 2SC117S 2SC876 2SC876 ~~~~~ 2S01490 250789 BFT31 2NS310 TE01402A BFX68

2SC2001

Contextual Info: 2SC2001 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol

transistor 2sc2002

Abstract: 2sc2002 2SC-2002
Contextual Info: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCRIPTION FEATURES 2SC2002 The 2SC2002 is designed for use in driver stage of high voltage audio equipments. PACKAGE DIMENSIONS in millimeters inches • High total power dissipation. PT : 600 mW • High hp£ and high voltage.

2sc2003

Contextual Info: SEC IMPIM S IL IC O N T R A N S IS T O R ELECTRON DEVICE D E S C R IP T I O N 2SC2003 The 2 S C 2 0 0 3 is designed for use in driver stage o f high voltage audio equipments. FEATU RES P A C K A G E D IM E N S IO N S in millimeters inches • High total power dissipation.

2SC2001

Abstract: 2sc2001 transistor
Contextual Info: 2SC2001 2SC2001 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.6 W (Tamb=25℃) 1. EMITTER 0.7 A 2. COLLECTOR 30 V 3. BASE 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

2SC2001

Abstract: transistor 2sc2001
Contextual Info: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

Contextual Info: MCC TM Micro Commercial Components 2SC2001
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V

transistor 2sc2001

Abstract: 2SC2001
Contextual Info: NPN SILICON TRANSISTOR 2SC2001 DESC R IP TIO N The 2SC2001 is designed for use in output stage of portable R A D IO and cassette type tape recorder, general purpose applica­ tions. FEATURES • High total power dissipation. PT : 600 mW • High hFE and low V CE sat

2SD454

Abstract: 2SC901 2SC1667 2SD400 E 2SC2516 NEC 2sc2120 2SD473 2SD647 2s0867 2SD526
Contextual Info: - £ m « it Manuf. Type No. 2SD 439 ^ 2SD 457 * 2SD 459 * 2SD 460 * * 2SD 461 * 2SD 463 — * 2SD 454 ^ 3K SANYO = $ B n 2SC2236 2SC1449 2SD635 2SD970 K 2SD633 2SD970OO %t9 7 C 2SD473(H) 2SD524 2SD473(H) 2SC2120 2SC2001 ED 2SD471 2SD 469 -— m « T a *

Contextual Info: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V

Contextual Info: MCC Features • • • • 2SC2001
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC

transistor C2001

Abstract: C2001 c2001 transistor 2SC2001K
Contextual Info: MCC TM Micro Commercial Components 2SC2001-M 2SC2001-L 2SC2001-K
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 0.6Watts of Power Dissipation. Collector-current 0. 7A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SC2001 TRANSISTOR NPN 1. EMITTER FEATURES z High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)

transistor 2sc2001

Abstract: 2SC2001 2SC2001 transistor
Contextual Info: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2001

Contextual Info: ST 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2002 equivalent

Abstract: 2SC2002 2SC2002 pin configuration driver transistor hfe 60
Contextual Info: ST 2SC2002 NPN Silicon Epitaxial Planar Transistor for use in driver stage of high voltage audio equipments. The transistor is subdivided into three groups, M, L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.

2SC2001

Abstract: 2SC2001L 2SC200 2SC2001K 2SC2001-L 2SC2001-M 2SC2001-K
Contextual Info: 2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  High hFE and low VCE sat hFE(IC=100mA)：200(Typ) VCE(sat)(700mA)：0.2V(Typ) G

D1088

Abstract: 2SC200 D1173 2SC2001 transistor 2sc2001 C10535J C10943X PA33
Contextual Info: v ' J = i > h 7 > ÿ ^ Silic o n T ra n sisto r 2SC2001 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier 4$ ^JK S /P A C K A G E DIMENSIONS »/F E A T U R E S U nit : mm 5.2 MAX. < , S hFE -r U t f f c / J o Pt = 600 mW L s 7 f if à f t m æ T T o

2SC2001

Abstract: PT-600
Contextual Info: Transistors 2SC2001 USHA INDIA LTD

Contextual Info: 2SC2001 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.