2SD88 Search Results

2SD880L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD880 NPN SILICON TRANSISTOR NPN EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. „ FEATURES * High DC Current Gain: hFE=200 Max. (VCE=5V, IC=0.5A) * Low Saturation Voltage: VCE(SAT)=1.0V(Max.)(IC=3A, IB=0.3A)

Contextual Info: 2SD882 PNP Type Elektronische Bauelemente Epitaxl Planar Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 D E Description A S1 The 2SD882 is suited for the output stage of 0.75W audio, voltage requlator, and relay driver.

2SD884

Contextual Info: Inchange Semiconductor Product Specification 2SD884 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·High voltage;high speed ·Large PC APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SD882

Abstract: complement 2sd882 2SB772 2SB772 TO-126
Contextual Info: Inchange Semiconductor Product Specification 2SD882 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB772 APPLICATIONS ·Audio amplifier ·Voltage regulator ·DC-DC converter ·Relay driver PINNING PIN DESCRIPTION 1

smd 2sd882

Abstract: npn smd 2a 2sd882 smd transistor 2sd882 2SD882 TRANSISTOR 2SD882 hfe 60
Contextual Info: Transistors SMD Type NPN Silicon Power Transistor 2SD882 Features Excellent hFE linearity and high hFE hFE = 60 to 400 VCE = 2 V, IC = 1 A Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage

2s0880

Abstract: 2SB83 250880 2SB834 2SD880 e50V 2sD880 TRANSISTOR
Contextual Info: ÆfcMOS PEC NPN SILICON POWER TRANSISTORS NPN .designed for use in audio frequency power amplifier applications 2SD880 FEATURES: * Low Collector-Emitter Saturation Voltage VCE satf 1 0 V (Max @ I c=3.0A,Ib=0.3A * DC Current Gain hFE= 60-300 lc= 0.5A * Complememtary to PNP 2SB834

2sd880 equivalent

Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

toshiba 2sd425

Abstract: 2SC792 nec 2sd287 2SD427 2sd 311 2S0880 2SD287C 2SD1391 2SD313 2SD867
Contextual Info: - m « € T y p e No. ' d 2SD 288 ^ 2SD 289 y B V B « a c 2SD 290 ^ 2SD 291 / 2SD 232 —• * 2SD 287 * 2SD 287C * * Manuf. h m SANYO 1m K 2 TOSHIBA A 2SD2023 V - — 2SD867 2SD1135 2SD1897 V - — 2SD880 2SD1135 2SD2023 ¿0UÖÖU ZÔU113ÏI ZSUZUZ3 * 2SD 312

Contextual Info: 2SD880 Plastic-Encapsulate Transistors NPN TO—220 Features Power dissipation PCM: 1.5 W Tamb=25℃ Collector current ICM: 3 A Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. BASE 2. COLLECTOR 3. EMITTER

Contextual Info: UTC 2SD882 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES *High current output up to 3A *Low saturation voltage *Complement to 2SB772 1 APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator TO-251 1:BASE 2:COLLECTOR 3: EMITTER

2SD882T

Contextual Info: ST 2SD882T NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage VCBO 40 V

2SD882

Abstract: 2sb772 D882 p h D882 transistor D882 datasheet 2SD882 pnp 2SB772 equivalent br b772 D882 B772 transistor b772
Contextual Info: 2SB772 2SD882 PNP/NPN Epitaxial Planar Transistors TO-126 1. EMITTER 2.COLLECTOR 3.BASE 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Symbol VCEO VCBO VEBO IC(DC)

2SD882

Abstract: 2SD882Y
Contextual Info: MCC 2SD882-R 2SD882-O 2SD882-Y 2SD882-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant Note1 ("P" Suffix designates

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SD882 Features • • • • NPN Silicon Plastic-Encapsulate Transistor Capable of 1.25Watts of Power Dissipation.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low Frequency Power Amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2SD888

Contextual Info: 2SD888 2SD888 x ij □ NPN = V y u - JI2/S i N PN T riple Diffused Planar t AF Power Amplifier h FE, U n it ! m m 4 .4 m a x . 1 0 .2 m a x . • *Nf iS /F eatu res 2.9max. V cE s at A !{ & ^ \ / L o W • 3 • X -4 v -f- > T 'iS l# M H ^ o / H i g h speed sw itching

Contextual Info: ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR  SOT-223 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S  APPLICATIONS TO-92 ORDERING INFORMATION Order Number Lead Free

2SD882

Abstract: 2SD882L 2SD882 TRANSISTOR 2sd882 TO-252 2SB772 TO-252 POWER AND MEDIUM POWER TRANSISTOR 2SB772 complement 2sd882 2SB772 2SD882G of 2SD882
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD882 NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR „ FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SB772 „ APPLICATIONS * Audio power amplifier * DC-DC convertor * Voltage regulator

2SD880Y

Abstract: VCEO-60V 2SD880-Y 2SD880
Contextual Info: SILICON PLASTIC POWER TRANSISTOR NPN 2SD880Y 3A 30W Technical Data …designed for Low Frequency Power Amplifier. F Collector-Emitter Voltage: VCEO=60V F DC Current Gain: 20 @ IC=3A F TO-220 Package MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage

Contextual Info: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae

Contextual Info: 2SD886 3A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 Low frequency power amplifier High Current 1Emitter 2Collector 3Base Collector 2 REF. 3

UTC2SD880

Abstract: 2sd880 equivalent 2SB834 2SD880 QW-R203-013
Contextual Info: UTC 2SD880 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SD880 is designed for audio frequency power amplifier applications. FEATURE *High DC Current Gain: hFE=300 Max. (VCE=5V,IC=0.5A) *Low Saturation Voltage: VCE(sat)=1.0V(Max.)(IC=3A,IB=0.3A)

2SD886

Contextual Info: 2SD886 2SD886 TRANSISTOR NPN TO-126C FEATURES Power dissipation PCM: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 3 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 123 TJ, Tstg: -55℃ to +150℃